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    LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20130075772A1

    公开(公告)日：2013-03-28

    申请号：US13614646

    申请日：2012-09-13

    申请人： Rintaro Koda ,  Hideki Watanabe ,  Masaru Kuramoto ,  Shunsuke Kono ,  Takao Miyajima

    发明人： Rintaro Koda ,  Hideki Watanabe ,  Masaru Kuramoto ,  Shunsuke Kono ,  Takao Miyajima

    IPC分类号： H01L33/58

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0218 ,  H01S5/0655 ,  H01S5/2031 ,  H01S5/34333 ,  H01S5/50 ,  H01S2301/166

    摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.

    摘要翻译： 提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c） 第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。 第一化合物半导体层的厚度大于0.6μm。 在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。

    Light-emitting device and method of manufacturing the same
    2.
    发明授权
    Light-emitting device and method of manufacturing the same 有权
    发光装置及其制造方法

    公开(公告)号：US08792160B2

    公开(公告)日：2014-07-29

    申请号：US13614646

    申请日：2012-09-13

    申请人： Rintaro Koda ,  Hideki Watanabe ,  Masaru Kuramoto ,  Shunsuke Kono ,  Takao Miyajima

    发明人： Rintaro Koda ,  Hideki Watanabe ,  Masaru Kuramoto ,  Shunsuke Kono ,  Takao Miyajima

    IPC分类号： H01S5/22

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0218 ,  H01S5/0655 ,  H01S5/2031 ,  H01S5/34333 ,  H01S5/50 ,  H01S2301/166

    摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.

    摘要翻译： 提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c） 第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。 第一化合物半导体层的厚度大于0.6μm。 在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。

    Semiconductor optical amplifier
    3.
    发明授权
    Semiconductor optical amplifier 有权
    半导体光放大器

    公开(公告)号：US08786941B2

    公开(公告)日：2014-07-22

    申请号：US13166900

    申请日：2011-06-23

    申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/00

    CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

    摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

    摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

    SEMICONDUCTOR OPTICAL AMPLIFIER
    5.
    发明申请
    SEMICONDUCTOR OPTICAL AMPLIFIER 有权
    半导体光放大器

    公开(公告)号：US20120002271A1

    公开(公告)日：2012-01-05

    申请号：US13166900

    申请日：2011-06-23

    申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S3/00

    CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

    摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

    摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

    ALIGNMENT METHOD OF SEMICONDUCTOR OPTICAL AMPLIFIER AND LIGHT OUTPUT DEVICE
    6.
    发明申请
    ALIGNMENT METHOD OF SEMICONDUCTOR OPTICAL AMPLIFIER AND LIGHT OUTPUT DEVICE 有权
    半导体光放大器和光输出装置的对准方法

    公开(公告)号：US20120002696A1

    公开(公告)日：2012-01-05

    申请号：US13163251

    申请日：2011-06-17

    申请人： Tomoyuki Oki ,  Rintaro Koda ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

    发明人： Tomoyuki Oki ,  Rintaro Koda ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/026

    CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0064 ,  H01S5/0071 ,  H01S5/028 ,  H01S5/0601 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4006

    摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.

    摘要翻译： 提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。 半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置 通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。