公开(公告)号：US06194328B1

公开(公告)日：2001-02-27

申请号：US09207676

申请日：1998-12-09

申请人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

发明人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

IPC分类号： H01L2131

CPC分类号： H01L21/02134 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/318

摘要： A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.

摘要翻译： 在包括至少一个有源区的半导体衬底之上形成电介质中间层。 用氮气处理电介质中间层的暴露的上表面，在其上形成氮化阻挡层。 在其上具有氮化阻挡层的电介质中间层上形成至少一个含氢介电层。 氮化阻挡层用作阻挡氢从至少一个含氢介电层扩散到电介质中间层中，从而防止热载流子注入可靠性的降低。

公开(公告)号：US5973387A

公开(公告)日：1999-10-26

申请号：US993053

申请日：1997-12-18

申请人： Robert C. Chen ,  Jeffrey A. Shields ,  Khanh Tran

发明人： Robert C. Chen ,  Jeffrey A. Shields ,  Khanh Tran

IPC分类号： H01L21/3213 ,  H01L21/8239 ,  H01L21/3205 ,  H01L27/108

CPC分类号： H01L21/32136 ,  H01L27/1052

摘要： Leading and trailing metal features in a dense array of conductive lines bordering an open field are formed with side surfaces that gradually taper in the direction of the open field toward an underlying substrate. Each side surface bordering the open field is formed with a sufficient slope to reduce cracking of the subsequently deposited dielectric gap fill layer at high stress areas bordering the open field.

摘要翻译： 在开放场附近的密集导电线阵列中的前沿和尾随金属特征形成有沿着开放场方向朝向下面的衬底逐渐变细的侧表面。 与开放场相邻的每个侧面形成有足够的斜率以减少随后沉积的电介质间隙填充层在与开放场相邻的高应力区域处的开裂。

公开(公告)号：US06522013B1

公开(公告)日：2003-02-18

申请号：US09136527

申请日：1998-08-19

申请人： Robert C Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

发明人： Robert C Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

IPC分类号： H01L2348

CPC分类号： H01L21/76805 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Punch-through vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an exposed upper surface of a lower metal feature, e.g. portions exposed by penetrating and undercutting an anti-reflective coating. A metal such as tungsten is subsequently deposited to fill the punch-through via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H2/N2 plasma to lower its resistivity. Moreover, the thickness of the anti-reflective coating can be reduced and the process window for etching the via widened.

摘要翻译： 通过最初通过化学气相沉积首先沉积薄的共形氮化钛层来填充穿通通孔，以覆盖下部金属特征的暴露的上表面，例如， 通过穿透和底切抗反射涂层暴露的部分。 随后沉积诸如钨的金属以填充穿通孔。 实施方案包括有机钛化合物如四 - 二甲基氨基钛的热分解，以及在H 2 / N 2等离子体中处理沉积的氮化钛以降低其电阻率。 此外，可以减少抗反射涂层的厚度，并且用于蚀刻通孔的工艺窗口变宽。

公开(公告)号：US6060384A

公开(公告)日：2000-05-09

申请号：US177482

申请日：1998-10-23

申请人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

发明人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/314 ,  H01L21/76826 ,  H01L2924/0002

摘要： Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.

摘要翻译： 旋转HSQ用于制造高密度多金属层半导体器件的间隙填充金属层。 在形成无边界通孔期间沉积的HSQ层的退化，如使用含O 2等离子体的光致抗蚀剂剥离，通过用含H2的等离子体处理降解的HSQ层来恢复悬挂的Si-H键，从而钝化表面 并且在用导电材料（例如阻挡层）填充通孔开口之前防止吸湿。

公开(公告)号：US6043147A

公开(公告)日：2000-03-28

申请号：US993119

申请日：1997-12-18

申请人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

发明人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  H01L21/316

CPC分类号： H01L21/02134 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/3124 ,  H01L21/76801

摘要： Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.

摘要翻译： 图案化的金属层是填充有HSQ的间隙，并且被钝化以在通过PECVD和平坦化的氧化物沉积之前基本上以沉积值稳定HSQ的介电常数。 通过在含硅烷（SiH 4）的等离子体中处理沉积的HSQ层来实现钝化和稳定化。

公开(公告)号：US06472751B1

公开(公告)日：2002-10-29

申请号：US09656437

申请日：2000-09-06

申请人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

发明人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

IPC分类号： H01L2940

CPC分类号： H01L21/02134 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/318

摘要： A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.

摘要翻译： 在包括至少一个有源区的半导体衬底之上形成电介质中间层。 用氮气处理电介质中间层的暴露的上表面，在其上形成氮化阻挡层。 在其上具有氮化阻挡层的电介质中间层上形成至少一个含氢介电层。 氮化阻挡层用作阻挡氢从至少一个含氢介电层扩散到电介质中间层中，从而防止热载流子注入可靠性的降低。

公开(公告)号：US5866945A

公开(公告)日：1999-02-02

申请号：US951592

申请日：1997-10-16

申请人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

发明人： Robert C. Chen ,  Jeffrey A. Shields ,  Robert Dawson ,  Khanh Tran

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/314 ,  H01L21/76826 ,  H01L2924/0002

摘要： Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is overcome by treating the degraded HSQ layer with an H.sub.2 -containing plasma to restore the dangling Si--H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.

公开(公告)号：US6083851A

公开(公告)日：2000-07-04

申请号：US332368

申请日：1999-06-14

申请人： Jeffrey A. Shields ,  Khanh Tran ,  Robert Chen ,  Robert Dawson

发明人： Jeffrey A. Shields ,  Khanh Tran ,  Robert Chen ,  Robert Dawson

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/318

CPC分类号： H01L21/02134 ,  H01L21/02282 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/31053 ,  H01L21/31058

摘要： HSQ is employed for gap filling patterned metal layers. The surface of the deposited HSQ gap fill layer is modified to decrease its plasma etching rate. Embodiments include modifying the HSQ surface by exposure to a plasma, such as a nitrogen-containing plasma, e.g., a plasma containing ammonia or hydrogen/nitrogen, to form a nitrided surface region. Reduction of the plasma etching rate of HSQ enables formation of reliable low resistance borderless vias.

公开(公告)号：US6087724A

公开(公告)日：2000-07-11

申请号：US84737

申请日：1998-05-27

申请人： Jeffrey A. Shields ,  Khanh Tran ,  Robert Chen ,  Robert Dawson

发明人： Jeffrey A. Shields ,  Khanh Tran ,  Robert Chen ,  Robert Dawson

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02134 ,  H01L21/02282 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/31053 ,  H01L21/31058

摘要： HSQ is employed for gap filling patterned metal layers. The surface of the deposited HSQ gap fill layer is modified to decrease its plasma etching rate. Embodiments include modifying the HSQ surface by exposure to a plasma, such as a nitrogen-containing plasma, e.g., a plasma containing ammonia or hydrogen/nitrogen, to form a nitrided surface region. Reduction of the plasma etching rate of HSQ enables formation of reliable low resistance borderless vias.

摘要翻译： HSQ用于间隙填充图案化金属层。 沉积的HSQ间隙填充层的表面被修改以降低其等离子体蚀刻速率。 实施方案包括通过暴露于诸如含氮等离子体的等离子体（例如含有氨或氢/氮的等离子体）来修饰HSQ表面，以形成氮化表面区域。 降低HSQ的等离子体蚀刻速率能够形成可靠的低电阻无边界通孔。

公开(公告)号：US20090163018A1

公开(公告)日：2009-06-25

申请号：US12004124

申请日：2007-12-20

申请人： Steven Avanzino ,  Jeffrey A. Shields ,  Joffre Bernard ,  Suzette K. Pangrle

发明人： Steven Avanzino ,  Jeffrey A. Shields ,  Joffre Bernard ,  Suzette K. Pangrle

IPC分类号： H01L21/4763

CPC分类号： H01L21/31683 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633

摘要： The present method of fabricating a resistive memory device includes the steps of providing a first electrode, oxidizing a portion of the first electrode with an oxidizing agent, providing a metal body on the oxidized portion of the first electrode, oxidizing the entire metal body with an oxidizing agent, and providing a second electrode on the oxidized metal body.

摘要翻译： 制造电阻式存储器件的本方法包括以下步骤：提供第一电极，用氧化剂氧化第一电极的一部分，在第一电极的氧化部分上提供金属体，用金属体氧化整个金属体 氧化剂，并在氧化的金属体上提供第二电极。