公开(公告)号：US5716875A

公开(公告)日：1998-02-10

申请号：US609697

申请日：1996-03-01

申请人： Robert E. Jones, Jr. ,  Peir-Yung Chu ,  Peter Zurcher ,  Ajay Jain

发明人： Robert E. Jones, Jr. ,  Peir-Yung Chu ,  Peter Zurcher ,  Ajay Jain

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/324 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L21/00

CPC分类号： H01L27/11502 ,  H01L21/8221 ,  H01L21/8238 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/11507 ,  H01L28/55

摘要： A method for forming CMOS transistors and ferroelectric capacitors on a single substrate (10) with improved yield begins by forming CMOS transistors (37a, 37b, 40, 42). A hydrogen anneal using 4-5% hydrogen and a remainder nitrogen is performed to reduce dangling atomic bonds at the gate dielectric/substrate interface of the transistors (37a, 37b, 40, 42). A silicon nitride layer (48) is then deposited over the transistors and on the backside of the wafer substrate (10) in order to substantially encapsulate the effects of the hydrogen anneal to the CMOS transistors (37a, 37b, 40, 42). Ferroelectric capacitor layers (54, 58, 60, 62, 64) are formed overlying the nitride layer (48) where the ferroelectric capacitor layers (54, 58, 60, 62, 64) are oxygen annealed in pure O.sub.2. The nitride layer (48) prevents the transistor hydrogen anneal from damaging the ferroelectric material by containing the hydrogen.

摘要翻译： 通过形成CMOS晶体管（37a，37b，40,42），可以在单个衬底（10）上形成CMOS晶体管和铁电电容器的方法以提高的产量开始。 进行使用4-5％氢和余量氮的氢退火以减少晶体管（37a，37b，40,42）的栅介质/衬底界面处的悬挂原子键。 然后在晶体管和晶片衬底（10）的背面上沉积氮化硅层（48），以便基本上将氢退火的影响封装到CMOS晶体管（37a，37b，40,42）。 铁电电容器层（54,58,60,62,64）形成在氮化物层（48）上，其中铁电电容器层（54,58,60,62,64）在纯O2中进行氧退火。 氮化物层（48）防止晶体管氢退火通过包含氢而损坏铁电材料。

公开(公告)号：US6010927A

公开(公告)日：2000-01-04

申请号：US959554

申请日：1997-10-28

申请人： Robert E. Jones, Jr. ,  Peir-Yung Chu ,  Peter Zurcher ,  Ajay Jain

发明人： Robert E. Jones, Jr. ,  Peir-Yung Chu ,  Peter Zurcher ,  Ajay Jain

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/324 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L21/8221 ,  H01L21/8238 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/11507 ,  H01L28/55

摘要： A method for forming CMOS transistors and ferroelectric capacitors on a single substrate (10) with improved yield begins by forming CMOS transistors (37a, 37b, 40, 42). A hydrogen anneal using 4-5% hydrogen and a remainder nitrogen is performed to reduce dangling atomic bonds at the gate dielectric/substrate interface of the transistors (37a, 37b, 40, 42). A silicon nitride layer (48) is then deposited over the transistors and on the backside of the wafer substrate (10) in order to substantially encapsulate the effects of the hydrogen anneal to the CMOS transistors (37a, 37b, 40, 42). Ferroelectric capacitor layers (54, 58, 60, 62, 64) are formed overlying the nitride layer (48) where the ferroelectric capacitor layers (54, 58, 60, 62, 64) are oxygen annealed in pure O.sub.2. The nitride layer (48) prevents the transistor hydrogen anneal from damaging the ferroelectric material by containing the hydrogen.

摘要翻译： 通过形成CMOS晶体管（37a，37b，40,42），可以在单个衬底（10）上形成CMOS晶体管和铁电电容器的方法以提高的产量开始。 进行使用4-5％氢和余量氮的氢退火以减少晶体管（37a，37b，40,42）的栅介质/衬底界面处的悬挂原子键。 然后在晶体管和晶片衬底（10）的背面上沉积氮化硅层（48），以便基本上将氢退火的影响封装到CMOS晶体管（37a，37b，40,42）。 铁电电容器层（54,58,60,62,64）形成在氮化物层（48）上，其中铁电电容器层（54,58,60,62,64）在纯O2中进行氧退火。 氮化物层（48）防止晶体管氢退火通过包含氢而损坏铁电材料。

公开(公告)号：US09815052B2

公开(公告)日：2017-11-14

申请号：US14715346

申请日：2015-05-18

申请人： Ajay Jain ,  Atul Jain ,  Aviral Jain

发明人： Ajay Jain ,  Atul Jain ,  Aviral Jain

IPC分类号： B01L3/02 ,  G01F11/02 ,  B01F15/04

CPC分类号： B01L3/0206 ,  B01F15/0454 ,  B01L3/0265 ,  B01L2200/026 ,  B01L2200/0605 ,  B01L2200/0621 ,  B01L2200/16 ,  B01L2300/049 ,  B01L2300/0861 ,  B01L2400/0478 ,  B01L2400/0616 ,  B01L2400/0622 ,  B01L2400/0633 ,  B01L2400/0666 ,  G01F11/021 ,  G01F11/028

摘要： A fluid dispensing device includes a dispensing cylinder, a first inlet and a second inlet. The first inlet is disposed within a first container on which the fluid dispensing device is mounted. The first inlet and the second inlet are configured to facilitate intake of only one fluid into the dispensing cylinder at a given point in time. The fluid dispensing device also includes a first outlet and a second outlet. The first outlet and the second outlet are configured to dispense only one fluid out of the dispensing cylinder at a given point in time. The fluid dispensing device further includes a valve assembly fluidically coupled to the first inlet and the second inlet, and to the first outlet and the second outlet. The valve assembly is configured to control flow of the fluids within and/or out of the dispensing cylinder.

公开(公告)号：US07788145B2

公开(公告)日：2010-08-31

申请号：US11877087

申请日：2007-10-23

申请人： Ganesh Wadawadigi ,  Ajay Jain ,  Deepak Mohapatra ,  Sivakumar Balakrishnan

发明人： Ganesh Wadawadigi ,  Ajay Jain ,  Deepak Mohapatra ,  Sivakumar Balakrishnan

IPC分类号： G06F17/50 ,  G06F9/44 ,  G06Q10/00

CPC分类号： G06Q10/087 ,  G06Q10/0875 ,  G06Q30/0601 ,  G06Q30/0611 ,  G06Q30/0633 ,  G06Q30/0635

摘要： A method for distributed inventory management includes receiving information regarding a number of participants in a value chain and information regarding one or more items relevant in the value chain. The method also includes modeling relationships between two or more of the participants based on the received information and modeling the one or more items based on the received information. The method further includes receiving inventory data from the participants relating to the one or more items, evaluating the received inventory data according to one or more business rules associated with an agent, executing a business process associated with the agent based on the evaluation of the inventory data and the models of the relationships and the items, and communicating output of the business process to one or more of the participants.

摘要翻译： 用于分布式库存管理的方法包括接收关于价值链中的参与者的数量的信息以及关于价值链中相关的一个或多个项目的信息。 该方法还包括基于所接收的信息来建立两个或多个参与者之间的建模关系，并且基于所接收的信息对一个或多个项目进行建模。 该方法还包括从参与者接收关于一个或多个项目的库存数据，根据与代理相关联的一个或多个业务规则来评估所接收的库存数据，基于库存的评估来执行与该代理相关联的业务流程 数据和关系和项目的模型，以及将业务流程的输出传达给一个或多个参与者。

公开(公告)号：US20080040245A1

公开(公告)日：2008-02-14

申请号：US11877087

申请日：2007-10-23

申请人： Ganesh Wadawadigi ,  Ajay Jain ,  Deepak Mohapatra ,  Sivakumar Balakrishnan

发明人： Ganesh Wadawadigi ,  Ajay Jain ,  Deepak Mohapatra ,  Sivakumar Balakrishnan

IPC分类号： G06Q10/00

CPC分类号： G06Q10/087 ,  G06Q10/0875 ,  G06Q30/0601 ,  G06Q30/0611 ,  G06Q30/0633 ,  G06Q30/0635

摘要： A method for distributed inventory management includes receiving information regarding a number of participants in a value chain and information regarding one or more items relevant in the value chain. The method also includes modeling relationships between two or more of the participants based on the received information and modeling the one or more items based on the received information. The method further includes receiving inventory data from the participants relating to the one or more items, evaluating the received inventory data according to one or more business rules associated with an agent, executing a business process associated with the agent based on the evaluation of the inventory data and the models of the relationships and the items, and communicating output of the business process to one or more of the participants.

摘要翻译： 用于分布式库存管理的方法包括接收关于价值链中的参与者的数量的信息以及关于价值链中相关的一个或多个项目的信息。 该方法还包括基于所接收的信息来建立两个或多个参与者之间的建模关系，并且基于所接收的信息对一个或多个项目进行建模。 该方法还包括从参与者接收关于一个或多个项目的库存数据，根据与代理相关联的一个或多个业务规则来评估所接收的库存数据，基于库存的评估来执行与该代理相关联的业务流程 数据和关系和项目的模型，以及将业务流程的输出传达给一个或多个参与者。

公开(公告)号：US20060051380A1

公开(公告)日：2006-03-09

申请号：US10504039

申请日：2003-02-06

申请人： Richard Schulick ,  Drew Pardoll ,  Ajay Jain

发明人： Richard Schulick ,  Drew Pardoll ,  Ajay Jain

IPC分类号： A61K39/00 ,  A61K48/00

CPC分类号： A61K39/0011 ,  A61K2039/5152 ,  A61K2039/5156 ,  A61K2039/53 ,  A61K2039/55522 ,  A61K2039/55594

摘要： The invention provides methods and compositions for targeting a separately generated immune response to a specific organ or tissue, e.g. one affected by cancer, using one or more agents with a tropism for the organ or tissue or that can be specifically localized to the desired organ or tissue. For example, the invention provides methods ands compositions for treating liver metastases from colorectal cancer using a combination of a granulocyte/macrophage colony stimulating factor (GM-CSF) augmented tumor cell vaccination and Listeria monocytogenes (LM) infection.

摘要翻译： 本发明提供用于靶向单独产生的对特定器官或组织的免疫应答的方法和组合物，例如， 受癌症影响的一种，使用一种或多种具有针对器官或组织的向性或可以特异性定位于所需器官或组织的药剂。 例如，本发明提供了使用粒细胞/巨噬细胞集落刺激因子（GM-CSF）增加的肿瘤细胞接种和单核细胞增多性李斯特菌（LM）感染的组合来治疗结直肠癌肝转移的方法和组合物。

公开(公告)号：US06455426B1

公开(公告)日：2002-09-24

申请号：US09741716

申请日：2000-12-19

申请人： Ajay Jain

发明人： Ajay Jain

IPC分类号： H01L2144

CPC分类号： H01L21/76888 ,  H01L21/76834

摘要： A method for making a semiconductor device is described. That method comprises forming a copper containing layer on a substrate, then forming a tantalum containing layer on the copper containing layer. After the tantalum containing layer is oxidized, an etch stop layer may be formed on the oxidized tantalum layer.

公开(公告)号：US06268289B1

公开(公告)日：2001-07-31

申请号：US09080809

申请日：1998-05-18

申请人： Rina Chowdhury ,  Ajay Jain ,  Olubunmi Adetutu

发明人： Rina Chowdhury ,  Ajay Jain ,  Olubunmi Adetutu

IPC分类号： H01L2144

CPC分类号： H01L21/76874 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879 ,  H01L2221/1089

摘要： A method for forming a copper interconnect begins by depositing a barrier layer (48) within an in-laid region (18). An edge exclusion protection layer (50) is formed over the barrier layer (48), and this layer (50) is processed so that it only lies within the edge exclusion region (20) of the wafer. The layer (50) is removed from active area portions of the wafer so that contact resistance of copper interconnects is not affected. Wet surface processing is used to form a catalyst (64b) on the wafer surface to enable electroless copper plating within active areas of the wafer to form a copper seed layer (52). The layer (52) is not formed in an edge exclusion region (20). Electroplating is then used to thicken the copper material to form a copper layer (54) over the layer (52) wherein the in-laid copper interconnect is completed.

摘要翻译： 用于形成铜互连的方法通过在屏蔽区域（18）内沉积阻挡层（48）开始。 边缘排除保护层（50）形成在阻挡层（48）上方，并且该层（50）被处理，使得其仅位于晶片的边缘排除区域（20）内。 从晶片的有效区域部分去除层（50），使得铜互连的接触电阻不受影响。 使用湿表面处理在晶片表面上形成催化剂（64b），以在晶片的有效区域内实现化学镀铜以形成铜籽晶层（52）。 层（52）不形成在边缘排除区域（20）中。 然后使用电镀来增厚铜材料，以在其上完成嵌入式铜互连的层（52）上形成铜层（54）。

公开(公告)号：US5930586A

公开(公告)日：1999-07-27

申请号：US887696

申请日：1997-07-03

申请人： Ajay Jain ,  Robert L. Hance

发明人： Ajay Jain ,  Robert L. Hance

IPC分类号： G01N23/223 ,  H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12

摘要： A method and apparatus for detecting copper (Cu) contamination on the backside of a wafer (120) begins by providing the wafer (120). The wafer (120) is rotated about a rotational axis via a motor/computer controlled wafer stage (118). In addition to rotation of the wafer (120), motor/computer control of a monochromator (116) is used to raster scan an X-ray beam (114b) across a surface of the rotating wafer (120). A plurality of X-ray detectors (122) are arrayed in one or more rows in close proximity to the scanned surface of the semiconductor wafer (120). The detectors (122), detect X-ray fluorescence emission from the surface of the wafer (120) whereby copper contamination of the wafer (120) can be determined in an accurate and time efficient manner which enables contamination detection in-line with normal wafer processing.

摘要翻译： 一种用于检测晶片（120）背面上的铜（Cu）污染的方法和装置开始于提供晶片（120）。 晶片（120）经由电动机/计算机控制的晶片台（118）围绕旋转轴线旋转。 除了晶片（120）的旋转之外，单色仪（116）的马达/计算机控制被用于跨过旋转晶片（120）的表面扫描X射线束（114b）。 多个X射线检测器（122）以与半导体晶片（120）的扫描表面相邻的一行或多行排列。 检测器（122）检测来自晶片（120）的表面的X射线荧光发射，从而可以精确和时间有效的方式确定晶片（120）的铜污染，这使得能够与正常晶片一起进行污染检测 处理。

公开(公告)号：US5821168A

公开(公告)日：1998-10-13

申请号：US895017

申请日：1997-07-16

申请人： Ajay Jain

发明人： Ajay Jain

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877

摘要： A process for forming a semiconductor device (68) in which an insulating layer (52) is nitrided and then covered by a thin adhesion layer (58) before depositing a composite copper layer (62). This process does not require a separate diffusion barrier as a portion of the insulating layer (52) has been converted to form a diffusion barrier film (56). Additionally, the adhesion layer (58) is formed such that it can react with the interconnect material resulting in strong adhesion between the composite copper layer (62) and the diffusion barrier film (56) as well as allow a more continuous interconnect and via structure that is more resistant to electromigration.

摘要翻译： 一种用于形成半导体器件（68）的工艺，其中在沉积复合铜层（62）之前，将绝缘层（52）氮化并由薄粘合层（58）覆盖。 当绝缘层（52）的一部分已被转换以形成扩散阻挡膜（56）时，该工艺不需要单独的扩散阻挡层。 此外，粘合层（58）形成为使得其能够与互连材料反应，导致复合铜层（62）和扩散阻挡膜（56）之间的强粘合性，并且允许更连续的互连和通孔结构 这更耐电迁移。