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公开(公告)号：US07235863B2
公开(公告)日：2007-06-26
申请号：US10893522
申请日：2004-07-16
IPC分类号： H01L29/167 , C30B15/00
CPC分类号： H01L21/3225 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ O i ]
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2.发明授权公开(公告)号：US06803331B2
公开(公告)日：2004-10-12
申请号：US10357601
申请日：2003-02-04
IPC分类号： H01L2126
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225 , H01L21/324 , Y10T117/1088
摘要： A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality [ Oi ]
摘要翻译： 一种用于对硅晶片进行热处理的方法，其中硅晶片至少临时暴露于含氧气氛中，热处理发生在以不等式满足的方式选择的温度下，其中[ Oi]是硅晶片中的氧浓度。（T）是在温度T下氧在硅中的极限溶解度，sigmaSiO 2是二氧化硅的表面能，Ω是沉淀氧原子的体积， r是平均COP半径，k是玻尔兹曼常数。 由上述方法制成的硅晶片。
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公开(公告)号：US07537657B2
公开(公告)日：2009-05-26
申请号：US11477705
申请日：2006-06-29
CPC分类号： H01L21/3225 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ]
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公开(公告)号：US20060278157A1
公开(公告)日：2006-12-14
申请号：US11477705
申请日：2006-06-29
IPC分类号： H01L21/322
CPC分类号： H01L21/3225 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon water by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ]
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5.发明授权Film or layer made of semi-conductive material and method for producing said film or layer 有权由半导体材料制成的薄膜或层及其制造方法公开(公告)号：US07052948B2
公开(公告)日：2006-05-30
申请号：US10481537
申请日：2002-06-27
IPC分类号： H01L21/8238
CPC分类号： H01L21/3223 , H01L21/76251
摘要： The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.
摘要翻译： 本发明涉及在薄层中具有低缺陷密度的半导体材料制成的膜或层，以及具有低表面粗糙度，缺陷密度和厚度变化的薄硅层的SOI-盘。 本发明还涉及一种制造薄膜或由半导体材料制成的层的方法。 所述方法包括以下步骤：a）从具有给定几何结构的周期性重复凹槽的半导体材料制造结构，b）热处理表面结构材料，直到形成具有周期性重复的中空空间的层， 在所述材料的表面上，c）沿着所述中空空间层与所述半导体材料的其余部分分离所述表面上的所述封闭层。
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6.发明申请Film or layer of semiconducting material, and process for producing the film or layer 有权薄膜或半导体材料层，以及制造薄膜或层的方法公开(公告)号：US20060202310A1
公开(公告)日：2006-09-14
申请号：US11384887
申请日：2006-03-20
IPC分类号： H01L29/06
CPC分类号： H01L21/3223 , H01L21/76251
摘要： SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦ 20 nm in thickness, has an HF density of ≦ 0.1/cm2, and a surface roughness of 0.2 nm RMS.
摘要翻译： SOI晶片被制造成具有非常薄的高表面质量的器件层。 该层的厚度<20nm，HF密度<= 0.1 / CM <2>，表面粗糙度为0.2nm RMS。
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7.发明授权
公开(公告)号：US5935320A
公开(公告)日：1999-08-10
申请号：US918843
申请日：1997-08-26
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B33/02 , H01L21/322 , H01L21/324
CPC分类号： C30B15/00 , C30B13/00 , C30B29/06 , Y10S117/916
摘要： A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.
摘要翻译： 一种制造低缺陷密度的硅晶片的方法是其中a）通过熔融材料固化形成单晶并且然后冷却而产生具有至少4×10 17 / cm 3的氧掺杂浓度的硅单晶，然后冷却 在850℃至1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟; b）处理单晶以形成硅晶片; 和c）将硅晶片在至少1000℃的温度下退火至少1小时。 此外，可以基于上述（a）的氧掺杂浓度至少为4×10 17Ω/ cm 3和氮掺杂浓度为至少1×10 14 / cm 3来制备硅单晶。
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8.发明授权Film or layer of semiconducting material, and process for producing the film or layer 有权薄膜或半导体材料层，以及制造薄膜或层的方法公开(公告)号：US07417297B2
公开(公告)日：2008-08-26
申请号：US11384887
申请日：2006-03-20
IPC分类号： H01L29/06
CPC分类号： H01L21/3223 , H01L21/76251
摘要： SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm2, and a surface roughness of 0.2 nm RMS.
摘要翻译： SOI晶片被制造成具有非常薄的高表面质量的器件层。 该层的厚度<20nm，HF密度<= 0.1 / CM <2>，表面粗糙度为0.2nm RMS。
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公开(公告)号：US06001170A
公开(公告)日：1999-12-14
申请号：US695315
申请日：1996-08-09
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1032
摘要： A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.
摘要翻译： 通过切克劳斯基法从半导体材料生长单晶的方法，其中熔体在晶体生长期间受到磁场的影响，并且磁场通过叠加静态磁场和交变磁场而产生 领域。 用于执行该过程的装置具有磁性装置，其包括布置在坩埚周围的两个线圈，产生静磁场的一个线圈和产生交变磁场的另一个线圈。
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公开(公告)号：US5746825A
公开(公告)日：1998-05-05
申请号：US686118
申请日：1996-07-23
CPC分类号： C30B15/26 , Y10T117/1004
摘要： A method and a device is provided for determining the diameter of a monocrystal growing at a crystallization boundary during the pulling of the monocrystal from a melt. The method includes imaging a part of the crystallization boundary on at least one mirror, observing the mirror image and determining the diameter of the monocrystal from the observed relative position of the crystallization boundary on the mirror image.
摘要翻译： 提供了一种方法和装置，用于确定在从熔体拉制单晶体期间在结晶边界处生长的单晶的直径。 该方法包括将结晶边界的一部分成像在至少一个反射镜上，观察镜像并根据所观察到的结晶边界在镜像上的相对位置确定单晶的直径。
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