摘要:
SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦ 20 nm in thickness, has an HF density of ≦ 0.1/cm2, and a surface roughness of 0.2 nm RMS.
摘要翻译:SOI晶片被制造成具有非常薄的高表面质量的器件层。 该层的厚度<20nm,HF密度<= 0.1 / CM <2>,表面粗糙度为0.2nm RMS。
摘要:
The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.
摘要:
SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm2, and a surface roughness of 0.2 nm RMS.
摘要翻译:SOI晶片被制造成具有非常薄的高表面质量的器件层。 该层的厚度<20nm,HF密度<= 0.1 / CM <2>,表面粗糙度为0.2nm RMS。
摘要:
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.
摘要:
A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ]
摘要:
A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ O i ]
摘要:
A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.
摘要翻译:一种制造低缺陷密度的硅晶片的方法是其中a)通过熔融材料固化形成单晶并且然后冷却而产生具有至少4×10 17 / cm 3的氧掺杂浓度的硅单晶,然后冷却 在850℃至1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟; b)处理单晶以形成硅晶片; 和c)将硅晶片在至少1000℃的温度下退火至少1小时。 此外,可以基于上述(a)的氧掺杂浓度至少为4×10 17Ω/ cm 3和氮掺杂浓度为至少1×10 14 / cm 3来制备硅单晶。
摘要:
A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon water by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ]
摘要:
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.
摘要翻译:不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片,氮浓度为1.10×13×10 4原子/ cm 3, / SUP>,氧浓度为5.2.10±17.5×10 17原子/ cm 3,中心厚度BMD密度为3.10 直线滑移的累积长度<= 3cm,面积滑移区域的累积面积<= 7 在DNN通道中,前表面具有≥0.33μmLSE的氮诱发缺陷,至少5μm厚的层,其中<= 1.10×4 SUP >大于>0.09μm的COPs / cm 3> 3,并且不含BMD的层>5μm厚。 这样的晶片可以通过热处理硅晶片,放置在基板保持器上,根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器,选择最大加热速率以避免形成滑动。
摘要:
A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality [ Oi ]