摘要:
Boron nitride is used as a buried dielectric of an SOI structure including an SOI layer and a handle substrate. The boron nitride is located between an SOI layer and a handle substrate. Boron nitride has a dielectric constant and a thermal expansion coefficient close to silicon dioxide. Yet, boron nitride has a wet as well as a dry etch resistance that is much better than silicon dioxide. In the SOI structure, there is a reduced material loss of boron nitride during multiple wet and dry etches so that the topography and/or bridging are not an obstacle for device integration. Boron nitride has a low dielectric constant so that devices built in SOI active regions do not suffer from a charging effect.
摘要:
Boron nitride is used as a buried dielectric of an SOI structure including an SOI layer and a handle substrate. The boron nitride is located between an SOI layer and a handle substrate. Boron nitride has a dielectric constant and a thermal expansion coefficient close to silicon dioxide. Yet, boron nitride has a wet as well as a dry etch resistance that is much better than silicon dioxide. In the SOI structure, there is a reduced material loss of boron nitride during multiple wet and dry etches so that the topography and/or bridging are not an obstacle for device integration. Boron nitride has a low dielectric constant so that devices built in SOI active regions do not suffer from a charging effect.
摘要:
Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要:
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要:
A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.
摘要:
A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.
摘要:
A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.
摘要:
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.
摘要:
A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.
摘要:
Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.