利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.019 秒)

    Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
    1.
    发明授权
    Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography 失效
    光栅扫描粒子束光刻中邻近抗蚀剂加热的实时预测和校正

    公开(公告)号：US06720565B2

    公开(公告)日：2004-04-13

    申请号：US10057324

    申请日：2001-10-26

    申请人： Robert Innes ,  Sergey Babin ,  Robin Teitzel ,  Lee Veneklasen

    发明人： Robert Innes ,  Sergey Babin ,  Robin Teitzel ,  Lee Veneklasen

    IPC分类号： G21K510

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/304 ,  H01J2237/31769 ,  Y10S430/143

    摘要： The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.

    摘要翻译： 本发明涉及随着写入的进行，在写入期间在电流和/或停留时间内实现光束补偿，实时地预测电子束光刻中抗蚀剂的接近加热的方法。 一种使用能够进行邻近抗蚀剂温度评估的预计算核心的方法，因为波束写入是通过内核的标量积与分级单元大小覆盖图进行的。 显示了移位的脉冲响应函数，使内核值精确到几个百分点。

    Raster shaped beam writing strategy system and method for pattern generation
    3.
    发明授权
    Raster shaped beam writing strategy system and method for pattern generation 失效
    光栅形波束写入策略系统和模式生成方法

    公开(公告)号：US5876902A

    公开(公告)日：1999-03-02

    申请号：US789247

    申请日：1997-01-28

    申请人： Lee H. Veneklasen ,  William DeVore ,  R. L. Smith ,  Robin Teitzel

    发明人： Lee H. Veneklasen ,  William DeVore ,  R. L. Smith ,  Robin Teitzel

    IPC分类号： H01J37/302 ,  H01J37/317 ,  G03C5/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31776 ,  Y10S430/143

    摘要： A hybrid exposure strategy for pattern generation uses wide field raster scan deflection and a uniformly moving stage to expose long stripes. Periodic analog wide field magnetic scan is augmented by a high speed electrostatic retrograde scan to keep the beam stationary during exposure of rectangular flash fields. The system's data path utilizes a pattern represented in a rasterized format. Intermediate vector data bases are created using fracture rules that limit feature and hierarchical cell size of to be smaller than overlapping fringes of stripe data fields. Rectangular flash fields are employed with each field being a 1 by n array of writing pixels. The length, origin position and dose of line shaped beam flashes can be varied to allow patterns to be exposed on a design grid much smaller than a writing pixel. The length, origin position and dose data for each flash is derived from a rasterized data format using a decoder device. In this manner multiple writing pixels are exposed simultaneously without compromising resolution or diagonal line edge roughness, thus enhancing exposure rate. A high flash rate is assured by including astigmatic illumination to maximize beam current, and leveraged co-planar blanking and shaping deflection to minimize drive voltages.

    摘要翻译： 用于图案生成的混合曝光策略使用宽场光栅扫描偏转和均匀移动的阶段来暴露长条纹。 通过高速静电逆行扫描来增加定期的模拟广域磁扫描，以在矩形闪光场的曝光期间保持光束的静止。 系统的数据路径使用以光栅化格式表示的模式。 使用将特征和分层细胞大小限制为小于条带数据域的重叠条纹的断裂规则创建中间向量数据库。 采用矩形闪光场，每个场是1×n个写入像素阵列。 可以改变线形光束闪光的长度，原点位置和剂量，以允许图案暴露在比写入像素小得多的设计网格上。 每个闪存的长度，原始位置和剂量数据都是从使用解码器设备的光栅化数据格式导出的。 以这种方式，同时曝光多个写入像素而不损害分辨率或对角线边缘粗糙度，从而提高曝光率。 通过包括散光照明来最大限度地提高束电流，以及利用共面消隐和成形偏转以最小化驱动电压来确保高闪速。

    Scanning laser lithography system alignment apparatus
    6.
    发明授权
    Scanning laser lithography system alignment apparatus 失效
    扫描激光光刻系统对准装置

    公开(公告)号：US5327338A

    公开(公告)日：1994-07-05

    申请号：US973567

    申请日：1992-11-09

    申请人： Paul Allen ,  Mike Bohan ,  Tim Thomas ,  Robin Teitzel

    发明人： Paul Allen ,  Mike Bohan ,  Tim Thomas ,  Robin Teitzel

    IPC分类号： G03F7/20 ,  B41J2/435

    CPC分类号： G03F7/704

    摘要： A direct-write lithography tool having improved alignment characteristics. The present invention discloses use of an optical alignment apparatus in a multi-beam lithography system. The optical alignment apparatus provides for alignment through a reduction lens utilized by the multi-beam lithography system for writing to semiconductor wafers and the like through use of optics for correction of distortion and curvature caused by viewing with a radiant energy beam of a different wavelength than the beams used for writing. Further, the alignment optics provide for multiple paths in a single optics system through use of liquid crystal retarders and beam splitters to direct the radiant energy beam through a selected optical path. In the present invention, a first optical path may provide for high magnification and a second for low magnification. Further, other optical paths may provide for bright or dark field illumination and viewing.

    摘要翻译： 具有改进的对准特性的直写光刻工具。 本发明公开了在多光束光刻系统中使用光学对准装置。 光学对准装置通过多光束光刻系统使用的还原透镜进行对准，用于通过使用用于校正由不同波长的辐射能量束观察引起的失真和曲率的光学元件来写入半导体晶片等 梁用于书写。 此外，对准光学器件通过使用液晶延迟器和分束器来引导辐射能量束通过所选择的光路而在单个光学系统中提供多个路径。 在本发明中，第一光路可以提供高倍率，而第二光路可以提供低放大率。 此外，其他光路可以提供亮场或暗场照明和观看。

    Pattern generation system
    7.
    发明授权
    Pattern generation system 失效
    模式生成系统

    公开(公告)号：US4956650A

    公开(公告)日：1990-09-11

    申请号：US237753

    申请日：1988-08-26

    申请人： Paul C. Allen ,  Robin Teitzel ,  Timothy Thomas

    发明人： Paul C. Allen ,  Robin Teitzel ,  Timothy Thomas

    IPC分类号： G02F1/11 ,  B23K26/06 ,  B23K26/073 ,  G02B27/09

    CPC分类号： B23K26/073 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/067

    摘要： An improved pattern generation system. The pattern generation system of the present invention discloses an improved optical system for correcting problems of astigmatism and ellipticity in a radiant energy beam used for generating patterns on a workpiece. The present invention further discloses improved control circuitry for controlling modulation of said beams. The control circuitry corrects for problems of isofocal bias caused by non-linearities in the turn-on/turn-off of the beams.

    摘要翻译： 改进的模式生成系统。 本发明的图案生成系统公开了一种用于校正用于在工件上产生图案的辐射能束中的散光和椭圆度问题的改进的光学系统。 本发明还公开了用于控制所述光束的调制的改进的控制电路。 控制电路校正由于光束的导通/关断引起的非线性引起的异焦点偏差的问题。