公开(公告)号：US07326465B2

公开(公告)日：2008-02-05

申请号：US11211168

申请日：2005-08-23

申请人： Robert Seidel ,  Franz Kreupl ,  Andrew Graham

发明人： Robert Seidel ,  Franz Kreupl ,  Andrew Graham

IPC分类号： B32B9/00

CPC分类号： H01L21/76876 ,  B82Y10/00 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24917 ,  Y10T428/30 ,  H01L2924/00

摘要： An integrated electronic component having a substrate, a metal multilayer system, which is arranged at least on regions of the substrate, and a nonconductive layer, which is arranged on the metal multilayer system and has at least one contact hole, in which at least one carbon nanotube is grown on the metal multilayer system at the bottom of the contact hole. The metal multilayer system includes a high-melting metal layer, a metal separating layer, a catalyst layer, and a final metal separating layer. The high-melting metal layer is composed of at least one of tantalum, molybdenum, and tungsten. The metal separating layer is composed of aluminum, gold, or silver. The catalyst layer is composed of at least one of iron, cobalt, nickel, yttrium, titanium, platinum, and palladium, and a combination thereof. The final metal separating layer, which is arranged above the catalyst layer, is composed of aluminum.

摘要翻译： 一种集成电子部件，其具有衬底，至少布置在所述衬底的区域上的金属多层系统和非导电层，所述非导电层布置在所述金属多层系统上并具有至少一个接触孔，其中至少一个 碳纳米管在接触孔底部的金属多层体系上生长。 金属多层体系包括高熔点金属层，金属分离层，催化剂层和最终金属分离层。 高熔点金属层由钽，钼和钨中的至少一种构成。 金属分离层由铝，金或银构成。 催化剂层由铁，钴，镍，钇，钛，铂和钯中的至少一种及其组合构成。 设置在催化剂层上方的最终金属分离层由铝构成。

公开(公告)号：US20060234080A1

公开(公告)日：2006-10-19

申请号：US11211168

申请日：2005-08-23

申请人： Robert Seidel ,  Franz Kreupl ,  Andrew Graham

发明人： Robert Seidel ,  Franz Kreupl ,  Andrew Graham

IPC分类号： C03C27/00 ,  B32B15/04 ,  B32B9/00

CPC分类号： H01L21/76876 ,  B82Y10/00 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24917 ,  Y10T428/30 ,  H01L2924/00

摘要： An integrated electronic component having a substrate, a metal multilayer system, which is arranged at least on regions of the substrate, and a nonconductive layer, which is arranged on the metal multilayer system and has at least one contact hole, in which at least one carbon nanotube is grown on the metal multilayer system at the bottom of the contact hole. The metal multilayer system includes a high-melting metal layer, a metal separating layer, a catalyst layer, and a final metal separating layer. The high-melting metal layer is composed of at least one of tantalum, molybdenum, and tungsten. The metal separating layer is composed of aluminum, gold, or silver. The catalyst layer is composed of at least one of iron, cobalt, nickel, yttrium, titanium, platinum, and palladium, and a combination thereof. The final metal separating layer, which is arranged above the catalyst layer, is composed of aluminum.

摘要翻译： 一种集成电子部件，其具有基板，至少布置在所述基板的区域上的金属多层系统和非导电层，所述非导电层布置在所述金属多层系统上并且具有至少一个接触孔，其中至少一个 碳纳米管在接触孔底部的金属多层体系上生长。 金属多层体系包括高熔点金属层，金属分离层，催化剂层和最终金属分离层。 高熔点金属层由钽，钼和钨中的至少一种构成。 金属分离层由铝，金或银构成。 催化剂层由铁，钴，镍，钇，钛，铂和钯中的至少一种及其组合构成。 设置在催化剂层上方的最终金属分离层由铝构成。

公开(公告)号：US07425487B2

公开(公告)日：2008-09-16

申请号：US11482493

申请日：2006-07-07

申请人： Franz Kreupl ,  Robert Seidel

发明人： Franz Kreupl ,  Robert Seidel

IPC分类号： H01L21/336

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0545 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/813

摘要： The invention relates to a method for the production of a nanoelement field effect transistor, a nanoelement field effect transistor and a nanoelement arrangement. According to the method for the production of a nanoelement field effect transistor, a nanoelement is formed, a first and a second source-/drain area is coupled to the nanoelement, a surface area of a substrate is removed, such that a region of the nanoelement is exposed, and a gate-insulating structure and a gate structure are formed in a covered manner fully encompassing the nanoelement.

摘要翻译： 本发明涉及一种制备纳米元素场效应晶体管，纳米元素场效应晶体管和纳米元素排列的方法。 根据制造纳米元素场效应晶体管的方法，形成纳米元件，第一和第二源/漏区耦合到纳米元件，去除衬底的表面积，使得 纳米元素被暴露，并且以完全包围纳米元素的覆盖方式形成栅极绝缘结构和栅极结构。

公开(公告)号：US20090213830A1

公开(公告)日：2009-08-27

申请号：US11577070

申请日：2005-10-11

申请人： Georg Duesberg ,  Franz Kreupl ,  Robert Seidel ,  Gernot Steinlesberger

发明人： Georg Duesberg ,  Franz Kreupl ,  Robert Seidel ,  Gernot Steinlesberger

IPC分类号： H04J3/00 ,  H04B1/38 ,  G08B13/14

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0021

摘要： A communication system is disclosed. In one embodiment, the communication system includes a communication device set up to execute a process, configured to put itself into an activated state or into a deactivated state at alternate times, receive time information in a first operating state of the activated state, take the received time information as a basis for ascertaining the later time at which useful information is transmitted to the communication device, receive the useful information at the later time in a second operating state of the activated state. Individual components of the communication device are able to be put into an activated state or into a deactivated state independently of one another.

摘要翻译： 公开了一种电路。 该电路包括由基本上碳层形成的至少一个纳米结构和碳互连，其中纳米结构和碳互连彼此直接耦合。

公开(公告)号：US20080296559A1

公开(公告)日：2008-12-04

申请号：US12190379

申请日：2008-08-12

申请人： Franz Kreupl ,  Robert Seidel

发明人： Franz Kreupl ,  Robert Seidel

IPC分类号： H01L29/12

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0545 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/813

摘要： A nanoelement field effect transistor includes a nanotube disposed on the substrate. A first source/drain region is coupled to a first end portion of the nanoelement and a second source/drain region is coupled to a second end portion of the nanoelement. A recess in a surface region of the substrate is arranged in such a manner that a region of the nanoelement arranged between the first and second end portions is taken out over the entire periphery of the nanoelement. A gate-insulating structure covers the periphery of the nanoelement and a gate structure covers the periphery of the gate-insulating structure.

摘要翻译： 纳米元素场效应晶体管包括设置在基板上的纳米管。 第一源极/漏极区域耦合到纳米元件的第一端部分，并且第二源极/漏极区域耦合到纳米元件的第二端部。 衬底的表面区域中的凹部被布置成使得布置在第一和第二端部之间的纳米元件的区域在纳米元件的整个外围被取出。 栅极绝缘结构覆盖纳米元件的周边，并且栅极结构覆盖栅极绝缘结构的周边。

公开(公告)号：US20080296557A1

公开(公告)日：2008-12-04

申请号：US10587062

申请日：2005-01-19

申请人： Franz Kreupl ,  Robert Seidel

发明人： Franz Kreupl ,  Robert Seidel

IPC分类号： H01L29/66 ,  H01L21/335

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66439 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A semiconductor power switch and method is disclosed. In one embodiment the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact.

摘要翻译： 公开了一种半导体功率开关和方法。 在一个实施例中，半导体功率开关具有源极接触，漏极接触，设置在源极接触和漏极接触之间的半导体结构，以及可以用于控制源极之间的半导体结构的电流的栅极 接触和漏极接触。 半导体结构具有并联连接的多个纳米线，并且以使得每个纳米线在源极触点和漏极触点之间形成电连接的方式布置。

公开(公告)号：US20060261419A1

公开(公告)日：2006-11-23

申请号：US11482493

申请日：2006-07-07

申请人： Franz Kreupl ,  Robert Seidel

发明人： Franz Kreupl ,  Robert Seidel

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0545 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/813

摘要： The invention relates to a method for the production of a nanoelement field effect transistor, a nanoelement field effect transistor and a nanoelement arrangement. According to the method for the production of a nanoelement field effect transistor, a nanoelement is formed, a first and a second source-/drain area is coupled to the nanoelement, a surface area of a substrate is removed, such that a region of the nanoelement is exposed, and a gate-insulating structure and a gate structure are formed in a covered manner fully encompassing the nanoelement.

摘要翻译： 本发明涉及一种制备纳米元素场效应晶体管，纳米元素场效应晶体管和纳米元素排列的方法。 根据制造纳米元素场效应晶体管的方法，形成纳米元件，第一和第二源/漏区耦合到纳米元件，去除衬底的表面积，使得 纳米元素被暴露，并且以完全包围纳米元素的覆盖方式形成栅极绝缘结构和栅极结构。

公开(公告)号：US07635867B2

公开(公告)日：2009-12-22

申请号：US10476663

申请日：2002-05-16

申请人： Andrew Graham ,  Franz Hofmann ,  Johannes Kretz ,  Franz Kreupl ,  Richard Luyken ,  Wolfgang Rösner

发明人： Andrew Graham ,  Franz Hofmann ,  Johannes Kretz ,  Franz Kreupl ,  Richard Luyken ,  Wolfgang Rösner

IPC分类号： H01L31/0312

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  C01B32/05 ,  G01N27/127 ,  G11C13/025 ,  H01L51/0595

摘要： A nanotube array and a method for producing a nanotube array. The nanotube array has a substrate, a catalyst layer, which includes one or more subregions, on the surface of the substrate and at least one nanotube arranged on the surface of the catalyst layer, parallel to the surface of the substrate. The at least one nanotube being arranged parallel to the surface of the substrate results in a planar arrangement of at least one nanotube. Therefore, the nanotube array of the invention is suitable for coupling to conventional silicon microelectronics. Therefore, according to the invention it is possible for a nanotube array to be electronically coupled to macroscopic semiconductor electronics. Furthermore, the nanotube array according to the invention may have an electrically insulating layer between the substrate and the catalyst layer. This electrically insulating layer preferably has a topography which is such that the at least one nanotube rests on the electrically insulating layer at its end sections and is uncovered in its central section. As a result of the surface of the at least one nanotube being partly uncovered, the uncovered surface of the nanotube can be used as an active sensor surface. For example, the uncovered surface of the nanotube can come into operative contact with an atmosphere which surrounds the nanotube array. The electrical resistance of a nanotube changes significantly in the presence of certain gases. Thus because the nanotube is clear and uncovered, the nanotube array can be used in many sensor applications.

摘要翻译： 纳米管阵列及其制造方法。 纳米管阵列具有衬底，催化剂层，其包括在衬底的表面上的一个或多个子区域，和布置在催化剂层表面上的平行于衬底表面的至少一个纳米管。 所述至少一个纳米管平行于衬底的表面布置，导致至少一个纳米管的平面布置。 因此，本发明的纳米管阵列适用于与传统的硅微电子耦合。 因此，根据本发明，可以将纳米管阵列电连接到宏观半导体电子器件。 此外，根据本发明的纳米管阵列可以在衬底和催化剂层之间具有电绝缘层。 该电绝缘层优选地具有使得至少一个纳米管在其端部部分处于电绝缘层上并且在其中心部分未被覆盖的形貌。 由于至少一个纳米管的表面部分未被覆盖，纳米管的未被覆盖的表面可以用作主动传感器表面。 例如，纳米管的未覆盖表面可以与围绕纳米管阵列的气氛进行操作接触。 在某些气体的存在下，纳米管的电阻显着变化。 因此，由于纳米管是透明和未覆盖的，所以纳米管阵列可用于许多传感器应用中。

公开(公告)号：US08664657B2

公开(公告)日：2014-03-04

申请号：US11577070

申请日：2005-10-11

申请人： Georg Duesberg ,  Franz Kreupl ,  Robert Seidel ,  Gernot Steinlesberger

发明人： Georg Duesberg ,  Franz Kreupl ,  Robert Seidel ,  Gernot Steinlesberger

IPC分类号： H01L29/00 ,  H01L29/04 ,  H01L29/10

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0021

摘要： A circuit is disclosed. The circuit includes at least one nanostructure and a carbon interconnect formed by a substantially carbon layer, wherein the nanostructure and the carbon interconnect are directly coupled to one another.

摘要翻译： 公开了一种电路。 电路包括由基本上碳层形成的至少一个纳米结构和碳互连，其中纳米结构和碳互连彼此直接耦合。

公开(公告)号：US08319259B2

公开(公告)日：2012-11-27

申请号：US10587062

申请日：2005-01-19

申请人： Franz Kreupl ,  Robert Seidel

发明人： Franz Kreupl ,  Robert Seidel

IPC分类号： H01L29/76

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66439 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A semiconductor power switch and method is disclosed. In one Embodiment, the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact.

摘要翻译： 公开了一种半导体功率开关和方法。 在一个实施例中，半导体功率开关具有源极接触，漏极接触，设置在源极接触和漏极接触之间的半导体结构，以及可用于控制通过半导体结构的电流 源极接触和漏极接触。 半导体结构具有并联连接的多个纳米线，并且以使得每个纳米线在源极触点和漏极触点之间形成电连接的方式布置。