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    COMMUNICATION SYSTEM
    1.
    发明申请
    COMMUNICATION SYSTEM 失效
    具有纳米结构的电路和用于生产纳米结构的接触连接的方法

    公开(公告)号：US20090213830A1

    公开(公告)日：2009-08-27

    申请号：US11577070

    申请日：2005-10-11

    申请人： Georg Duesberg ,  Franz Kreupl ,  Robert Seidel ,  Gernot Steinlesberger

    发明人： Georg Duesberg ,  Franz Kreupl ,  Robert Seidel ,  Gernot Steinlesberger

    IPC分类号： H04J3/00 ,  H04B1/38 ,  G08B13/14

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0021

    摘要： A communication system is disclosed. In one embodiment, the communication system includes a communication device set up to execute a process, configured to put itself into an activated state or into a deactivated state at alternate times, receive time information in a first operating state of the activated state, take the received time information as a basis for ascertaining the later time at which useful information is transmitted to the communication device, receive the useful information at the later time in a second operating state of the activated state. Individual components of the communication device are able to be put into an activated state or into a deactivated state independently of one another.

    摘要翻译： 公开了一种电路。 该电路包括由基本上碳层形成的至少一个纳米结构和碳互连，其中纳米结构和碳互连彼此直接耦合。

    Method for depositing a conductive carbon material on a semiconductor for forming a Schottky contact and semiconductor contact device
    7.
    发明申请
    Method for depositing a conductive carbon material on a semiconductor for forming a Schottky contact and semiconductor contact device 审中-公开
    用于在用于形成肖特基接触和半导体接触器件的半导体上沉积导电碳材料的方法

    公开(公告)号：US20070010094A1

    公开(公告)日：2007-01-11

    申请号：US11495808

    申请日：2006-07-28

    申请人： Franz Kreupl ,  Gernot Steinlesberger

    发明人： Franz Kreupl ,  Gernot Steinlesberger

    IPC分类号： H01L21/44

    CPC分类号： H01L21/0435 ,  H01L21/044 ,  H01L21/28537 ,  H01L21/28581 ,  H01L21/443 ,  H01L29/47 ,  H01L29/475

    摘要： The invention relates to a method for depositing a conductive carbon material (17) on a semiconductor (14) for forming a Schottky contact (16). The inventive method comprises the following steps: introducing a semiconductor (14) into a process chamber (10); heating the interior (10′) of a process chamber (10) to a defined temperature; evacuating the process chamber (10) to a first defined pressure or below; heating the interior (10′) of a process chamber (10) to a second defined temperature; introducing a gas (12) which comprises at least carbon, until a second defined pressure is achieved which is higher than the first defined pressure; and depositing the conductive carbon material (17) on the semiconductor (14) from the gas (12) which comprises at least carbon, whereby the deposited carbon material (17) forms the Schottky contact (16) on the semiconductor (14).

    摘要翻译： 本发明涉及一种用于在用于形成肖特基接触（16）的半导体（14）上沉积导电碳材料（17）的方法。 本发明的方法包括以下步骤：将半导体（14）引入处理室（10）中; 将处理室（10）的内部（10'）加热至限定的温度; 将处理室（10）排空到第一限定压力或更低的压力; 将处理室（10）的内部（10'）加热到第二限定温度; 引入包含至少碳的气体（12），直到达到高于第一限定压力的第二限定压力; 以及从至少包含碳的气体（12）将导电碳材料（17）沉积在半导体（14）上，由此沉积的碳材料（17）在半导体（14）上形成肖特基接触（16）。

    Method for manufacturing a layer arrangement and layer arrangement
    8.
    发明授权
    Method for manufacturing a layer arrangement and layer arrangement 有权
    制造层布置和层布置的方法

    公开(公告)号：US07807563B2

    公开(公告)日：2010-10-05

    申请号：US11786770

    申请日：2007-04-12

    申请人： Zvonimir Gabric ,  Werner Pamler ,  Guenther Schindler ,  Gernot Steinlesberger ,  Andreas Stich ,  Martin Traving ,  Eugen Unger

    发明人： Zvonimir Gabric ,  Werner Pamler ,  Guenther Schindler ,  Gernot Steinlesberger ,  Andreas Stich ,  Martin Traving ,  Eugen Unger

    IPC分类号： H01L23/58

    CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method for manufacturing a layer arrangement, a plurality of electrically conductive structures are embedded in a substrate. Material of the substrate is removed at least between adjacent electrically conductive structures. An interlayer is formed on at least one portion of sidewalls of each of the electrically conductive structures. A first layer is formed on the interlayer where an upper partial region of the interlayer remaining free of a covering with the first layer. An electrically insulating second layer is formed selectively on that partial region of the interlayer which is free of the first layer, in such a way that the electrically insulating second layer bridges adjacent electrically conductive structures such that air gaps are formed between adjacent electrically conductive structures.

    摘要翻译： 在制造层布置的方法中，多个导电结构嵌入基板中。 至少在相邻的导电结构之间去除衬底的材料。 在每个导电结构的侧壁的至少一部分上形成中间层。 第一层形成在中间层上，其中层间的上部分区域保留没有覆盖物与第一层。 选择性地在中间层的不含第一层的部分区域上形成电绝缘的第二层，使得电绝缘的第二层桥接相邻的导电结构，使得在相邻的导电结构之间形成气隙。

    Process for producing ultrathin homogenous metal layers
    9.
    发明授权
    Process for producing ultrathin homogenous metal layers 有权
    生产超薄均质金属层的方法

    公开(公告)号：US06946386B2

    公开(公告)日：2005-09-20

    申请号：US10854759

    申请日：2004-05-25

    申请人： Gernot Steinlesberger ,  Manfred Engelhardt ,  Eugen Unger

    发明人： Gernot Steinlesberger ,  Manfred Engelhardt ,  Eugen Unger

    IPC分类号： C23C18/31 ,  C23C28/02 ,  H01L21/4763

    CPC分类号： C23C18/31 ,  C23C28/023

    摘要： A method of forming an ultrathin homogenous metal layer that serves as base metallization for formation of contact locations and/or contact pads and/or wirings of an integrated electronic component. The method includes the steps of depositing a first metal layer on a substrate at least in regions, and producing a second metal layer on the first metal layer at least in regions, component(s) of the second metal layer have a more positive redox potential than component(s) of the first metal layer, wherein ultrathin homogenous deposition of the second metal layer is effected by wet-chemical, current-free, electrochemical redox processes by element exchange from one or more metal salts as oxidant with at least a top metal atomic layer of the first metal layer as reductant.

    摘要翻译： 形成用于形成集成电子部件的接触位置和/或接触焊盘和/或布线的基底金属化的超薄均匀金属层的方法。 该方法包括以下步骤：至少在区域中在衬底上沉积第一金属层，并且至少在区域中在第一金属层上产生第二金属层，第二金属层的组分具有更正的氧化还原电位 其中第二金属层的超薄均匀沉积通过湿化学，无电流的电化学氧化还原过程通过元素交换从一种或多种金属盐作为氧化剂与至少一个顶部进行 第一金属层的金属原子层作为还原剂。