RTP process chamber pressure control
    4.
    发明授权
    RTP process chamber pressure control 失效
    RTP处理室压力控制

    公开(公告)号:US06828234B2

    公开(公告)日:2004-12-07

    申请号:US10108779

    申请日:2002-03-26

    IPC分类号: H01L2144

    CPC分类号: H01L21/67115 H01L21/67109

    摘要: A method that includes flowing an inert gas into an interior of a single wafer process chamber to create a pressure in the interior that is greater than an ambient pressure; and maintaining the greater interior pressure during a wafer transfer with the single wafer process chamber.

    摘要翻译: 一种方法,其包括将惰性气体流入单个晶片处理室的内部,以在内部产生大于环境压力的压力; 并且在用单晶片处理室进行晶片传送期间保持较大的内部压力。

    Transfer of wafers with edge grip
    5.
    发明申请
    Transfer of wafers with edge grip 审中-公开
    转移晶圆与边缘抓地力

    公开(公告)号:US20070215049A1

    公开(公告)日:2007-09-20

    申请号:US11375709

    申请日:2006-03-14

    IPC分类号: B32B3/02 C23C16/00

    摘要: Three wafer support fixtures transfer a wafer for thermal processing in an inverted orientation within a heating chamber. Two co-planar support fixtures grab the wafer edge inside the chamber from a blade within a 1.5 mm wafer exclusion zone and hold it above the edge ring during heat-up and then withdraw thermal processing. A third support fixture chucks the wafer backside and transfers it to sloping support areas of the edge ring. The three support fixtures inside the chamber are individually controlled from outside. Alternatively, an arm connected to a controller is connected to the three support fixtures

    摘要翻译: 三个晶片支撑固定装置在加热室内以反向取向转移用于热处理的晶片。 两个共面支撑固定装置从1.5mm晶圆排除区域内的叶片抓住室内的晶片边缘,并在加热期间将其保持在边缘环上方,然后退回热处理。 第三支撑夹具夹住晶片背面并将其转移到边缘环的倾斜支撑区域。 室内的三个支撑固定装置从外部单独控制。 或者,连接到控制器的臂连接到三个支撑固定装置