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    Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
    8.
    发明授权
    Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications 失效
    在适用于太阳能电池应用的激光划线透明导电氧化物层上沉积硅层

    公开(公告)号：US07964430B2

    公开(公告)日：2011-06-21

    申请号：US11752823

    申请日：2007-05-23

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L21/332 ,  H01L21/00

    CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

    摘要： Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    摘要翻译： 提供了减少透明导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透明导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    10.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
    用于在太阳能电池应用中使用的发射导电氧化物层上的硅层沉积的方法和装置

    公开(公告)号：US20080289686A1

    公开(公告)日：2008-11-27

    申请号：US11752794

    申请日：2007-05-23

    申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L31/04 ,  C23C16/00

    CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/04 ,  Y02E10/50

    摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。