公开(公告)号：US5578165A

公开(公告)日：1996-11-26

申请号：US412088

申请日：1995-03-27

申请人： Roger Patrick ,  Frank Bose ,  Philippe Schoenborn ,  Harry Toda

发明人： Roger Patrick ,  Frank Bose ,  Philippe Schoenborn ,  Harry Toda

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/321 ,  H05H1/46

摘要： The present invention relates to a method for generating a low pressure plasma circulating in a planar direction within a process enclosure. The invention generates plasma having substantially uniform density characteristics across a planar axis. The invention achieves improved uniformity of the plasma density by delivering more radio frequency power toward the periphery of the circulating plasma than toward the center of the plasma. Increasing the periphery power to the circulating plasma compensates for increased plasma losses due to interaction with the side walls of the process containment enclosure.

摘要翻译： 本发明涉及在工艺外壳内产生在平面方向上循环的低压等离子体的方法。 本发明产生了跨平面轴线具有基本均匀密度特性的等离子体。 本发明通过相对于等离子体的中心向循环等离子体的周边输送更多的射频功率来实现等离子体密度的均匀性提高。 增加循环等离子体的周边功率可以补偿由于与过程容纳外壳的侧壁相互作用而导致的等离子体损耗增加。

公开(公告)号：US5401350A

公开(公告)日：1995-03-28

申请号：US27995

申请日：1993-03-08

申请人： Roger Patrick ,  Frank Bose ,  Philippe Schoenborn ,  Harry Toda

发明人： Roger Patrick ,  Frank Bose ,  Philippe Schoenborn ,  Harry Toda

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/321 ,  H05H1/46

摘要： The present invention relates to an apparatus for generating a low pressure plasma circulating in a planar direction within a process enclosure. The invention generates plasma having substantially uniform density characteristics across a planar axis. The invention achieves improved uniformity of the plasma density by delivering more radio frequency power toward the periphery of the circulating plasma than toward the center of the plasma. Increasing the periphery power to the circulating plasma compensates for increased plasma losses due to interaction with the side walls of the process containment enclosure.

摘要翻译： 本发明涉及一种用于在处理外壳内产生在平面方向上循环的低压等离子体的装置。 本发明产生了跨平面轴线具有基本均匀密度特性的等离子体。 本发明通过相对于等离子体的中心向循环等离子体的周边输送更多的射频功率来实现等离子体密度的均匀性提高。 增加循环等离子体的周边功率可以补偿由于与过程容纳外壳的侧壁相互作用而导致的等离子体损耗增加。

公开(公告)号：US5468296A

公开(公告)日：1995-11-21

申请号：US169571

申请日：1993-12-17

申请人： Roger Patrick ,  Philippe Schoenborn ,  Mark Franklin ,  Frank Bose

发明人： Roger Patrick ,  Philippe Schoenborn ,  Mark Franklin ,  Frank Bose

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/32009 ,  H01J37/32082

摘要： An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RE power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.

摘要翻译： 一种用于生产适用于低压力范围内的半导体加工的等离子体的装置。 该设备包括具有电介质窗口的真空室，与室外的窗口相邻设置并且耦合到适当的电源的大致平面的线圈以及设置在室内的等离子体启动器。 一旦等离子体启动，平面线圈通过感应功率耦合来维持等离子体。 在一个实施例中，等离子体引发器是设置在室内并且耦合到第二RF电源的次级电极。 在替代实施例中，辅助电极和目标基座都通过功率分配器耦合到次级RE电源。 在替代实施例中，等离子体引发器用于电离一部分工艺气体并提供等离子体，其然后可以与平面线圈感应耦合。 处理气体的初始电离可以通过使用紫外光源，紫外激光器，诸如特斯拉线圈的高压电源或诸如火花塞的电弧形成装置来实现。

公开(公告)号：US5639519A

公开(公告)日：1997-06-17

申请号：US560934

申请日：1995-11-20

申请人： Roger Patrick ,  Philippe Schoenborn ,  Mark Franklin ,  Frank Bose

发明人： Roger Patrick ,  Philippe Schoenborn ,  Mark Franklin ,  Frank Bose

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/24

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/32009 ,  H01J37/32082

摘要： An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.

摘要翻译： 一种用于生产适用于低压力范围内的半导体加工的等离子体的装置。 该设备包括具有电介质窗口的真空室，与室外的窗口相邻设置并且耦合到适当的电源的大致平面的线圈以及设置在室内的等离子体启动器。 一旦等离子体启动，平面线圈通过感应功率耦合来维持等离子体。 在一个实施例中，等离子体引发器是设置在室内并且耦合到第二RF电源的次级电极。 在替代实施例中，辅助电极和目标基座都通过功率分配器耦合到次级RF电源。 在替代实施例中，等离子体引发器用于电离一部分工艺气体并提供等离子体，其然后可以与平面线圈感应耦合。 处理气体的初始电离可以通过使用紫外光源，紫外激光器，诸如特斯拉线圈的高压电源或诸如火花塞的电弧形成装置来实现。

公开(公告)号：US06062163A

公开(公告)日：2000-05-16

申请号：US876082

申请日：1997-06-13

申请人： Roger Patrick ,  Philippe Schoenborn ,  Mark Franklin ,  Frank Bose

发明人： Roger Patrick ,  Philippe Schoenborn ,  Mark Franklin ,  Frank Bose

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/32009 ,  H01J37/32082

摘要： An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.

摘要翻译： 一种用于生产适用于低压力范围内的半导体加工的等离子体的装置。 该设备包括具有电介质窗口的真空室，与室外的窗口相邻设置并且耦合到适当的电源的大致平面的线圈以及设置在室内的等离子体启动器。 一旦等离子体启动，平面线圈通过感应功率耦合来维持等离子体。 在一个实施例中，等离子体引发器是设置在室内并且耦合到第二RF电源的次级电极。 在替代实施例中，辅助电极和目标基座都通过功率分配器耦合到次级RF电源。 在替代实施例中，等离子体引发器用于电离一部分工艺气体并提供等离子体，其然后可以与平面线圈感应耦合。 处理气体的初始电离可以通过使用紫外光源，紫外激光器，诸如特斯拉线圈的高压电源或诸如火花塞的电弧形成装置来实现。

公开(公告)号：US5474648A

公开(公告)日：1995-12-12

申请号：US283296

申请日：1994-07-29

申请人： Roger Patrick ,  Frank A. Bose ,  Philippe Schoenborn

发明人： Roger Patrick ,  Frank A. Bose ,  Philippe Schoenborn

IPC分类号： H01J37/32 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

摘要： Dynamic control and delivery of radio frequency power in plasma process systems is utilized to enhance the repeatability and uniformity of the process plasma. Power, voltage, current, phase, impedance, harmonic content and direct current bias of the radio frequency energy being delivered to the plasma chamber may be monitored at the plasma chamber and used to control or characterize the plasma load. Dynamic pro-active control of the characteristics of the radio frequency power to the plasma chamber electrode during the formation of the plasma enhances the uniformity of the plasma for more exact and controllable processing of the work pieces.

摘要翻译： 利用等离子体处理系统中的射频功率的动态控制和传递来提高过程等离子体的重复性和均匀性。 输送到等离子体室的射频能量的功率，电压，电流，相位，阻抗，谐波含量和直流偏压可以在等离子体室处监测并用于控制或表征等离子体负载。 在形成等离子体期间对等离子体室电极的射频功率的特性的动态主动控制增强了等离子体的均匀性，从而更精确和可控地处理工件。

公开(公告)号：US5407524A

公开(公告)日：1995-04-18

申请号：US106017

申请日：1993-08-13

申请人： Roger Patrick ,  Frank Bose

发明人： Roger Patrick ,  Frank Bose

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H01J37/32963

摘要： The present invention relates to a system and method for detecting the end-point of a layer being removed from a semiconductor wafer by a plasma etching system. The invention determines end-point by referencing first and second positions of matching components of a matching network between a radio frequency source and the plasma etching system chamber. Comparison of a first position representative of chamber load impedance before end-point, and a second position representative of a change in chamber load impedance is utilized to determine end point.

摘要翻译： 本发明涉及通过等离子体蚀刻系统检测从半导体晶片去除的层的端点的系统和方法。 本发明通过参考射频源和等离子体蚀刻系统室之间的匹配网络的匹配部件的第一和第二位置来确定端点。 用于表示终点之前的室负载阻抗的第一位置和表示室负载阻抗的变化的第二位置的比较来确定端点。

公开(公告)号：US20120258603A1

公开(公告)日：2012-10-11

申请号：US13526974

申请日：2012-06-19

申请人： Roger Patrick ,  Gregory R. Bettencourt ,  Michael C. Kellogg

发明人： Roger Patrick ,  Gregory R. Bettencourt ,  Michael C. Kellogg

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  C23C16/45565 ,  C23C16/4557 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  Y10S403/12 ,  Y10S403/13

摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

摘要翻译： 用于等离子体反应室的电极组件，用于半导体衬底处理。 该组件包括上部喷头电极，其通过一系列间隔开的凸轮锁定机械地附接到背板。 保护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从电极的上表面延伸的锁定销。

公开(公告)号：US07190119B2

公开(公告)日：2007-03-13

申请号：US10703843

申请日：2003-11-07

申请人： Roger Patrick ,  Brett Richardson ,  Norman Williams

发明人： Roger Patrick ,  Brett Richardson ,  Norman Williams

IPC分类号： H01J7/24

CPC分类号： H01J37/3299 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H03H7/40

摘要： An arrangement for processing a semiconductor substrate in a plasma processing system is disclosed. The arrangement includes providing a RF coupling structure having a first terminal and a second terminal, the first terminal being coupled with a first electrical measuring device, the second terminal being coupled with a second electrical measuring device. The arrangement also includes coupling a compensating circuit to the second terminal. The arrangement further includes providing a feedback circuit coupled to receive information from the first electrical measuring device and the second electrical measuring device, an output of the feedback circuit being employed to control the compensating circuit in order to keep a ratio between a first electrical value at the first terminal and a second electrical value at the second terminal substantially at a predefined value.

摘要翻译： 公开了一种在等离子体处理系统中处理半导体衬底的装置。 该装置包括提供具有第一端子和第二端子的RF耦合结构，第一端子与第一电测量装置耦合，第二端子与第二电测量装置耦合。 该布置还包括将补偿电路耦合到第二端子。 该装置还包括提供耦合以从第一电测量装置和第二电测量装置接收信息的反馈电路，反馈电路的输出被用于控制补偿电路，以便保持第一电气值在 第一端子和第二端子处的第二电气值基本上是预定义的值。

公开(公告)号：US08470127B2

公开(公告)日：2013-06-25

申请号：US12985568

申请日：2011-01-06

申请人： Anthony de la Llera ,  Pratik Mankidy ,  Rajlnder Dhindsa ,  Michael C. Kellogg ,  Gregory R. Bettencourt ,  Roger Patrick

发明人： Anthony de la Llera ,  Pratik Mankidy ,  Rajlnder Dhindsa ,  Michael C. Kellogg ,  Gregory R. Bettencourt ,  Roger Patrick

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32532

摘要： A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

摘要翻译： 用于等离子体蚀刻的喷头电极和组件包括提供喷头电极和背板之间改进的热接触的凸轮锁。 凸轮锁包括背板中的凸轮轴，其接合安装在喷头电极上的螺柱的扩大头部。 组件可以包括围绕喷头电极的环形护罩，并且背板中的八个凸轮轴可以被操作，使得每个凸轮轴同时接合环形护罩上的螺柱和喷头电极的外排螺柱中的螺柱 。 可以操作另外八个凸轮轴，使得每个凸轮轴接合在喷头电极安装的螺柱的内部和中间行上的一对螺柱。