公开(公告)号：US20240275373A1

公开(公告)日：2024-08-15

申请号：US18643469

申请日：2024-04-23

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI ,  Kazuhide INO

IPC: H03K17/081 ,  G01R19/00 ,  H01L23/00 ,  H01L23/31 ,  H01L23/373 ,  H01L25/07 ,  H01L25/18 ,  H02H3/20 ,  H02H9/04 ,  H02M1/00 ,  H02M7/5387 ,  H03K17/082 ,  H03K17/12

CPC classification number: H03K17/08104 ,  G01R19/0092 ,  H01L23/3107 ,  H01L23/3735 ,  H01L24/40 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L25/18 ,  H02H3/202 ,  H02H9/046 ,  H02M7/5387 ,  H03K17/0822 ,  H03K17/122 ,  H01L24/33 ,  H01L24/37 ,  H01L24/48 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02M1/0009 ,  H03K2217/0027 ,  Y02B70/10

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

公开(公告)号：US20240234380A9

公开(公告)日：2024-07-11

申请号：US18399105

申请日：2023-12-28

Applicant: ROHM CO., LTD.

Inventor： Kenji HAYASHI ,  Masashi HAYASHIGUCHI

IPC: H01L25/07 ,  H01L23/00 ,  H01L23/36 ,  H01L23/488 ,  H01L25/18 ,  H02M7/48

CPC classification number: H01L25/07 ,  H01L23/36 ,  H01L23/488 ,  H01L24/06 ,  H01L24/49 ,  H01L25/18 ,  H02M7/48 ,  H01L2224/0603 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2924/13055

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

公开(公告)号：US20240136335A1

公开(公告)日：2024-04-25

申请号：US18399105

申请日：2023-12-28

Applicant: ROHM CO., LTD.

Inventor： Kenji HAYASHI ,  Masashi HAYASHIGUCHI

IPC: H01L25/07 ,  H01L23/00 ,  H01L23/36 ,  H01L23/488 ,  H01L25/18 ,  H02M7/48

CPC classification number: H01L25/07 ,  H01L23/36 ,  H01L23/488 ,  H01L24/06 ,  H01L24/49 ,  H01L25/18 ,  H02M7/48 ,  H01L2224/0603 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2924/13055

Abstract: A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

公开(公告)号：US20230261647A1

公开(公告)日：2023-08-17

申请号：US18306703

申请日：2023-04-25

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI ,  Kazuhide INO

IPC: H03K17/081 ,  H03K17/082 ,  H03K17/12 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H02H3/20 ,  H02H9/04 ,  H02M7/5387 ,  H01L23/31 ,  H01L23/373 ,  G01R19/00

CPC classification number: H03K17/08104 ,  H03K17/0822 ,  H03K17/122 ,  H01L24/49 ,  H01L25/072 ,  H01L25/18 ,  H01L24/40 ,  H01L24/73 ,  H02H3/202 ,  H02H9/046 ,  H02M7/5387 ,  H01L23/3107 ,  H01L23/3735 ,  G01R19/0092 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/19107 ,  H01L2924/13055 ,  H01L2924/10272 ,  H01L2224/40095 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/40225 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2224/371 ,  H01L2224/84801 ,  H01L24/37 ,  H01L2224/83801 ,  H03K2217/0027 ,  Y02B70/10 ,  H02M1/0009

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

公开(公告)号：US20190173461A1

公开(公告)日：2019-06-06

申请号：US16270248

申请日：2019-02-07

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI ,  Kazuhide INO

IPC: H03K17/081 ,  H03K17/12 ,  H01L25/07 ,  H01L25/18 ,  H01L23/00 ,  H03K17/082 ,  H01L23/373 ,  H01L23/31 ,  G01R19/00 ,  H02H3/20 ,  H02H9/04 ,  H02M7/5387

Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

公开(公告)号：US20190115296A1

公开(公告)日：2019-04-18

申请号：US16218017

申请日：2018-12-12

Applicant: ROHM CO., LTD.

Inventor： Yoshihisa TSUKAMOTO ,  Masashi HAYASHIGUCHI ,  Soichiro TAKAHASHI

IPC: H01L23/522 ,  H01L23/535 ,  H01L25/18 ,  H01L23/34 ,  H01L25/07 ,  H02M3/155 ,  H01L23/538

Abstract: A first power supply terminal P is provided with an internal wiring connection portion 31A, an upright portion 31B which is joined to the internal wiring connection portion 31A, an inclined portion 31C which is joined to the upright portion 31B and an external wiring connection portion 31D which is joined to the inclined portion 31C. A second power supply terminal N is provided with an internal wiring connection portion 32A, an upright portion 32B which is joined to the internal wiring connection portion 32A, an inclined portion 32C which is joined to the upright portion 32B and an external wiring connection portion 32D which is joined to the inclined portion 32C. The upright portion 31B of the first power supply terminal P and the upright portion 32B of the second power supply terminal N are arranged so as to face each other, with a predetermined interval kept therebetween.

公开(公告)号：US20240421028A1

公开(公告)日：2024-12-19

申请号：US18823279

申请日：2024-09-03

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI

IPC: H01L23/367 ,  H01L23/40

Abstract: A cooler includes a housing and a heat dissipator. The housing includes a recess that opens on a first side in a first direction and a bottom part located on a second side in the first direction and defining a part of the recess. The heat dissipator is attached to the bottom part and at least partially housed in the recess. The bottom part includes a flexible portion that deforms elastically. When a load toward the second side in the first direction is applied to the heat dissipator, an elastic force toward the first side in the first direction, which is generated from the flexible portion, acts on the heat dissipator. A semiconductor module includes a cooler, a semiconductor device disposed on the cooler, and a mounting member that holds the semiconductor device on the cooler.

公开(公告)号：US20240006402A1

公开(公告)日：2024-01-04

申请号：US18466470

申请日：2023-09-13

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI

IPC: H01L25/18 ,  H01L23/495 ,  H01L23/64 ,  H01L23/00

CPC classification number: H01L25/18 ,  H01L23/49562 ,  H01L23/645 ,  H01L24/32 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/40229 ,  H01L2224/48229 ,  H01L2224/73263 ,  H01L24/48 ,  H01L2924/13091 ,  H01L2924/13055 ,  H01L2924/12032

Abstract: A semiconductor device includes a first MOSFET and a first IGBT. A drain of the first MOSFET and a collector of the first IGBT are electrically connected to each other. A source of the first MOSFET and an emitter of the first IGBT are electrically connected to each other. An element withstand voltage of the first MOSFET is larger than an element withstand voltage of the first IGBT.

公开(公告)号：US20230275009A1

公开(公告)日：2023-08-31

申请号：US18302699

申请日：2023-04-18

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI ,  Takumi KANDA

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/50

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49506 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49589 ,  H01L23/50

Abstract: A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.

公开(公告)号：US20220319952A1

公开(公告)日：2022-10-06

申请号：US17595230

申请日：2020-07-29

Applicant: ROHM CO., LTD.

Inventor： Masashi HAYASHIGUCHI

IPC: H01L23/373 ,  H01L23/367 ,  H01L23/00 ,  H01L25/18

Abstract: A power module includes a substrate that is electrically insulative and includes a substrate main surface and a substrate back surface at opposite sides in a thickness direction. The power module also includes a mounting layer that is conductive and arranged on the substrate main surface. The power module further includes a graphite plate having anisotropic thermal conductivity and including a plate main surface and a plate back surface at opposite sides in the thickness direction. The plate back surface is connected to the mounting layer. The power module further includes a power semiconductor element arranged on the plate main surface.