公开(公告)号：US20220244305A1

公开(公告)日：2022-08-04

申请号：US17584673

申请日：2022-01-26

Applicant: ROHM CO., LTD.

Inventor： Tsuyoshi TACHI

IPC: G01R31/26 ,  H01L23/495 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device includes: a semiconductor element having an element main surface and first and second electrodes arranged on the element main surface; a first lead mounting the semiconductor element thereon; a second lead electrically connected to the first electrode; a third lead electrically connected to the second electrode; first connecting portions bonded to the first electrode and the second lead; and a sealing resin covering the semiconductor element, wherein the sealing resin includes a resin main surface facing the same side as the element main surface and a resin side surface connected to the resin main surface, the second lead includes a portion exposed from the sealing resin, the third lead includes a portion exposed from the sealing resin, and the exposed portion of the second lead includes a portion located on a side of the resin main surface with respect to the exposed portion of the third lead.

公开(公告)号：US20230238312A1

公开(公告)日：2023-07-27

申请号：US18296120

申请日：2023-04-05

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Tsuyoshi TACHI

IPC: H01L23/495 ,  H01L29/20 ,  H01L29/778 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49562 ,  H01L29/2003 ,  H01L29/7786 ,  H01L23/3121 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/13064 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/49175 ,  H01L2224/48175 ,  H01L2924/1033

Abstract: The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

公开(公告)号：US20200251409A1

公开(公告)日：2020-08-06

申请号：US16744743

申请日：2020-01-16

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Tsuyoshi TACHI

IPC: H01L23/495 ,  H01L29/20 ,  H01L29/778 ,  H01L23/31 ,  H01L23/00

Abstract: The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

公开(公告)号：US20240313059A1

公开(公告)日：2024-09-19

申请号：US18602050

申请日：2024-03-12

Applicant: ROHM CO., LTD.

Inventor： Tsuyoshi TACHI

IPC: H01L29/20 ,  H01L27/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/2003 ,  H01L27/0629 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/7786

Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: a switching element formed of a nitride semiconductor; a source pad electrically connected to a source electrode of the switching element; a drain pad electrically connected to a drain electrode of the switching element; a gate pad electrically connected to a gate electrode of the switching element; a capacitive element electrically connected to the source electrode of the switching element; a first pad electrically connected to the capacitive element; a resistive element electrically connected to the first pad; and a second pad electrically connected to the resistive element.

公开(公告)号：US20240088282A1

公开(公告)日：2024-03-14

申请号：US18457368

申请日：2023-08-29

Applicant: ROHM CO., LTD.

Inventor： Tsuyoshi TACHI

IPC: H01L29/778 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/417 ,  H01L29/94

CPC classification number: H01L29/7786 ,  H01L23/293 ,  H01L23/3114 ,  H01L29/2003 ,  H01L29/41775 ,  H01L29/94

Abstract: A semiconductor device includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an insulation layer arranged on the semiconductor substrate, a source pad formed on a head surface of the insulation layer and electrically connected to the source electrode, a drain pad formed on the head surface of the insulation layer and electrically connected to the drain electrode, a gate pad formed on the head surface of the insulation layer and connected to the gate electrode, a specified pad formed on the head surface of the insulation layer, and a capacitor. The capacitor includes a source-side electrode, electrically connected to the source electrode, and a specified electrode, electrically connected to the specified pad and arranged facing the source-side electrode.

公开(公告)号：US20240170353A1

公开(公告)日：2024-05-23

申请号：US18430644

申请日：2024-02-01

Applicant: ROHM CO., LTD.

Inventor： Tsuyoshi TACHI

IPC: H01L23/13 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07 ,  H01L25/18 ,  H05K1/02 ,  H05K1/18

CPC classification number: H01L23/13 ,  H01L23/3121 ,  H01L24/13 ,  H01L24/16 ,  H01L25/072 ,  H01L25/18 ,  H05K1/0298 ,  H05K1/183 ,  H01L2224/13155 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2924/13064 ,  H01L2924/181

Abstract: A semiconductor device includes: a substrate with an obverse surface facing in a thickness direction; first and second wirings on the obverse surface; and a semiconductor element with a first electrode facing the obverse surface and an adjacent second electrode facing the obverse surface. The first electrode is electrically bonded to the first wiring, and the second electrode bonded to the second wiring. The substrate includes first, second and third sections, with the first section including a portion of the obverse surface and overlapping with the first wiring and first electrode as viewed in the thickness direction. The second section includes a portion of the obverse surface, overlapping with the second wiring and second electrode as viewed in the thickness direction. The third section, located between the first and the second sections as viewed in the thickness direction, includes a first surface with its normal direction intersecting the thickness direction.

公开(公告)号：US20240162300A1

公开(公告)日：2024-05-16

申请号：US18393713

申请日：2023-12-22

Applicant: ROHM CO., LTD.

Inventor： Hirotaka OTAKE ,  Tsuyoshi TACHI

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/78

CPC classification number: H01L29/2003 ,  H01L29/7838 ,  H01L29/778

Abstract: This nitride semiconductor device is provided with: a depletion type transistor which comprises a first gate terminal, a first source terminal and a first drain terminal; and an enhancement type transistor which comprises a second gate terminal, a second source terminal and a second drain terminal. The second drain terminal is connected to the first source terminal; and the second source terminal is connected to the first gate terminal. The depletion type transistor comprises: an electron transit layer which is configured from a nitride semiconductor that contains aluminum in the crystal composition; and an electron supply layer which is formed on the electron transit layer and is configured from a nitride semiconductor that contains a larger amount of aluminum in the composition than the electron transit layer.

公开(公告)号：US20230253471A1

公开(公告)日：2023-08-10

申请号：US18149170

申请日：2023-01-03

Applicant: ROHM CO., LTD.

Inventor： Tsuyoshi TACHI

IPC: H01L29/47 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/475 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7786 ,  H01L29/401 ,  H01L29/66462

Abstract: A nitride semiconductor device includes: an electron transit layer composed of a nitride semiconductor; an electron supply layer formed on the electron transit layer and composed of a nitride semiconductor having a bandgap larger than that of the electron transit layer; a gate layer formed on a portion of the electron supply layer and composed of a nitride semiconductor containing acceptor-type impurities; a gate electrode formed on the gate layer; a passivation layer having first and second openings; a source electrode in contact with the electron supply layer via the first opening; and a drain electrode in contact with the electron supply layer via the second opening, wherein the gate layer is located between the first opening and the second opening, and wherein the gate layer includes a first gate layer of Ga-polar GaN and a second gate layer of N-polar GaN formed on the first gate layer.

公开(公告)号：US20210335697A1

公开(公告)日：2021-10-28

申请号：US17371647

申请日：2021-07-09

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Tsuyoshi TACHI

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L29/778 ,  H01L29/20

Abstract: The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.