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33 条记录 (耗时 0.022 秒)

    Gas-phase functionalization of surfaces of microelectronic structures
    1.
    发明授权
    Gas-phase functionalization of surfaces of microelectronic structures 有权
    微电子结构表面的气相官能化

    公开(公告)号：US09425406B2

    公开(公告)日：2016-08-23

    申请号：US13344738

    申请日：2012-01-06

    申请人： Roy G. Gordon ,  Damon B. Farmer

    发明人： Roy G. Gordon ,  Damon B. Farmer

    IPC分类号： C23C16/00 ,  H01B1/00 ,  H01L51/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  C01F7/30 ,  H01L51/05

    CPC分类号： H01L51/0049 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/02 ,  C01F7/304 ,  C01P2004/13 ,  H01L51/057 ,  H01L51/0595 ,  Y10S977/734 ,  Y10S977/755 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/89 ,  Y10T428/2918

    摘要： There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.

    摘要翻译： 提供了通过将表面暴露于至少一种包含非共价结合表面的官能化物质（例如NO 2或CH 3 ONO）的蒸气的表面而提供微电子结构的平坦表面的方法，同时提供 化学官能团，以产生官能化表面。 功能化表面暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，该稳定层使官能化层抵抗来自平面微电子表面的解吸，同时提供化学官能团。 稳定的表面暴露于在稳定的平面微电子表面上沉积材料层的至少一种材料层前体物质。 稳定的平面微电子表面可以在小于约700℃的峰值退火温度下退火

    Gas-Phase Functionalization of Carbon Nanotubes
    2.
    发明申请
    Gas-Phase Functionalization of Carbon Nanotubes 有权
    碳纳米管的气相官能化

    公开(公告)号：US20100260927A1

    公开(公告)日：2010-10-14

    申请号：US12820615

    申请日：2010-06-22

    申请人： Roy G. Gordon ,  Damon B. Farmer

    发明人： Roy G. Gordon ,  Damon B. Farmer

    IPC分类号： B05D5/12

    CPC分类号： C01B31/0233 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/22 ,  C01F7/304 ,  C01P2004/13 ,  H01L51/0049 ,  H01L51/057 ,  Y10S977/70 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/75 ,  Y10S977/755 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/878 ,  Y10S977/89 ,  Y10S977/891

    摘要： In a method for functionalizing a carbon nanotube surface, the nanotube surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the nanotube surface, providing chemically functional groups at the nanotube surface, producing a functionalized nanotube surface. A functionalized nanotube surface can be exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the nanotube surface while providing chemically functional groups at the nanotube surface, producing a stabilized nanotube surface. The stabilized nanotube surface can be exposed to at least one material layer precursor species that deposits a material layer on the stabilized nanotube surface.

    摘要翻译： 在用于官能化碳纳米管表面的方法中，纳米管表面暴露于至少一种包含至少一种与纳米管表面非共价结合的官能化物质的蒸气，在纳米管表面提供化学官能团，产生官能化的纳米管表面 。 功能化的纳米管表面可以暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，其使功能化层抵抗从纳米管表面解吸，同时在纳米管表面提供化学官能团，产生稳定的纳米管 表面。 稳定的纳米管表面可以暴露于在稳定的纳米管表面上沉积材料层的至少一种材料层前体物质。

    Gas-phase functionalization of carbon nanotubes
    3.
    发明授权
    Gas-phase functionalization of carbon nanotubes 有权
    碳纳米管的气相官能化

    公开(公告)号：US07767114B2

    公开(公告)日：2010-08-03

    申请号：US11703375

    申请日：2007-02-07

    申请人： Roy G. Gordon ,  Damon B. Farmer

    发明人： Roy G. Gordon ,  Damon B. Farmer

    IPC分类号： H01B1/00 ,  H01B1/04

    CPC分类号： C01B31/0233 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/22 ,  C01F7/304 ,  C01P2004/13 ,  H01L51/0049 ,  H01L51/057 ,  Y10S977/70 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/75 ,  Y10S977/755 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/878 ,  Y10S977/89 ,  Y10S977/891

    摘要： In a method for functionalizing a carbon nanotube surface, the nanotube surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the nanotube surface, providing chemically functional groups at the nanotube surface, producing a functionalized nanotube surface. A functionalized nanotube surface can be exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the nanotube surface while providing chemically functional groups at the nanotube surface, producing a stabilized nanotube surface. The stabilized nanotube surface can be exposed to at least one material layer precursor species that deposits a material layer on the stabilized nanotube surface.

    摘要翻译： 在用于官能化碳纳米管表面的方法中，纳米管表面暴露于至少一种包含至少一种与纳米管表面非共价结合的官能化物质的蒸气，在纳米管表面提供化学官能团，产生官能化的纳米管表面 。 功能化的纳米管表面可以暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，其使功能化层抵抗从纳米管表面解吸，同时在纳米管表面提供化学官能团，产生稳定的纳米管 表面。 稳定的纳米管表面可以暴露于在稳定的纳米管表面上沉积材料层的至少一种材料层前体物质。

    Gas-Phase Functionalization of Surfaces of Microelectronic Structures
    4.
    发明申请
    Gas-Phase Functionalization of Surfaces of Microelectronic Structures 有权
    微电子结构表面气相功能化

    公开(公告)号：US20120108075A1

    公开(公告)日：2012-05-03

    申请号：US13344738

    申请日：2012-01-06

    申请人： Roy G. Gordon ,  Damon B. Farmer

    发明人： Roy G. Gordon ,  Damon B. Farmer

    IPC分类号： H01L21/30 ,  B05D5/00 ,  B05D3/02 ,  B82Y99/00 ,  B82Y40/00

    CPC分类号： H01L51/0049 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/02 ,  C01F7/304 ,  C01P2004/13 ,  H01L51/057 ,  H01L51/0595 ,  Y10S977/734 ,  Y10S977/755 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/89 ,  Y10T428/2918

    摘要： There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.

    摘要翻译： 提供了通过将表面暴露于至少一种包含非共价结合表面的官能化物质（例如NO 2或CH 3 ONO）的蒸气的表面而提供微电子结构的平坦表面的方法，同时提供 化学官能团，以产生官能化表面。 功能化表面暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，该稳定层使官能化层抵抗来自平面微电子表面的解吸，同时提供化学官能团。 稳定的表面暴露于在稳定的平面微电子表面上沉积材料层的至少一种材料层前体物质。 稳定的平面微电子表面可以在小于约700℃的峰值退火温度下退火

    Graphene transistors with self-aligned gates
    10.
    发明授权
    Graphene transistors with self-aligned gates 有权
    具有自对准栅极的石墨烯晶体管

    公开(公告)号：US08803130B2

    公开(公告)日：2014-08-12

    申请号：US13492097

    申请日：2012-06-08

    申请人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

    发明人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Damon B. Farmer ,  Yu-Ming Lin ,  Yu Zhu

    IPC分类号： H01L29/06

    CPC分类号： H01L29/1606 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/7781 ,  Y10S977/734

    摘要： Graphene transistor devices and methods of their fabrication are disclosed. One such graphene transistor device includes source and drain electrodes and a gate structure including a dielectric sidewall spacer that is disposed between the source and drain electrodes. The device further includes a graphene layer that is adjacent to at least one of the source and drain electrodes, where an interface between the source/drain electrode(s) and the graphene layer maintains a consistent degree of electrical conductivity throughout the interface.

    摘要翻译： 公开了石墨烯晶体管器件及其制造方法。 一种这样的石墨烯晶体管器件包括源电极和漏电极以及包括设置在源极和漏极之间的电介质侧壁间隔物的栅极结构。 该器件还包括与源极和漏极电极中的至少一个相邻的石墨烯层，其中源/漏电极和石墨烯层之间的界面在整个界面处保持一致的电导率。