Mass storage systems and methods using solid-state storage media and ancillary interfaces for direct communication between memory cards
    3.
    发明授权
    Mass storage systems and methods using solid-state storage media and ancillary interfaces for direct communication between memory cards 有权
    使用固态存储介质的大容量存储系统和方法以及用于存储卡之间的直接通信的辅助接口

    公开(公告)号:US08949509B2

    公开(公告)日:2015-02-03

    申请号:US13311723

    申请日:2011-12-06

    IPC分类号: G06F13/00 G06F3/06 G06F13/40

    摘要: A mass storage system comprising multiple memory cards, each with non-volatile memory components, a system bus interface for communicating with a system bus of a host system, and at least one ancillary interface. The ancillary interface is configured for direct communication of commands, addresses and data between the memory cards via a cross-link connector without accessing the system bus interface.

    摘要翻译: 一种大容量存储系统,包括多个存储卡,每个具有非易失性存储器组件,用于与主机系统的系统总线通信的系统总线接口以及至少一个辅助接口。 辅助接口被配置为通过交叉连接器直接通信存储卡之间的命令,地址和数据,而不需要访问系统总线接口。

    Solid-state mass storage device and method for failure anticipation
    5.
    发明授权
    Solid-state mass storage device and method for failure anticipation 有权
    固态大容量存储装置及故障预测方法

    公开(公告)号:US08489966B2

    公开(公告)日:2013-07-16

    申请号:US12986564

    申请日:2011-01-07

    IPC分类号: G11C29/00

    摘要: A solid-state mass storage device and method of operating the storage device to anticipate the failure of at least one memory device thereof before a write endurance limitation is reached. The method includes assigning at least a first memory block of the memory device as a wear indicator that is excluded from use as data storage, using pages of at least a set of memory blocks of the memory device for data storage, writing data to and erasing data from each memory block of the set in program/erase (P/E) cycles, performing wear leveling on the set of memory blocks, subjecting the wear indicator to more P/E cycles than the set of memory blocks, performing integrity checks of the wear indicator and monitoring its bit error rate, and taking corrective action if the bit error rate increases.

    摘要翻译: 一种固态大容量存储装置和方法,用于在达到写入耐力限制之前操作存储装置以预测其至少一个存储器件的故障。 该方法包括将存储器件的至少第一存储块分配为作为数据存储被排除的磨损指示符,使用用于数据存储的存储器件的至少一组存储器块的页面,将数据写入和擦除 在程序/擦除(P / E)循环中来自该组的每个存储器块的数据,对该组存储器块执行磨损均衡,对磨损指示器进行比该组存储器块更多的P / E周期,执行完整性检查 磨损指示器并监视其误码率,如果误码率增加,则采取纠正措施。

    SOLID STATE DRIVE WITH LOW WRITE AMPLIFICATION
    7.
    发明申请
    SOLID STATE DRIVE WITH LOW WRITE AMPLIFICATION 审中-公开
    具有低写功率的固态驱动器

    公开(公告)号:US20120173795A1

    公开(公告)日:2012-07-05

    申请号:US13115716

    申请日:2011-05-25

    IPC分类号: G06F12/00

    摘要: A solid state drive having a non-volatile memory device and methods of operating the solid state drive to compare existing data stored on the memory device to subsequent data in an incoming data stream received by the solid state drive from a host system. If matching data are found, the solid state drive uses the existing data instead of writing the subsequent data to the memory device. Common data patterns can be shared among different files stored on the memory device.

    摘要翻译: 具有非易失性存储器件的固态驱动器和操作固态驱动器以将存储在存储器件中的存储数据与固态驱动器从主机系统接收的输入数据流中的后续数据进行比较的方法。 如果找到匹配数据,则固态驱动器使用现有数据,而不是将后续数据写入存储器件。 公共数据模式可以在存储在存储设备上的不同文件之间共享。

    METHODS, STORAGE DEVICES, AND SYSTEMS FOR PROMOTING THE ENDURANCE OF NON-VOLATILE SOLID-STATE MEMORY COMPONENTS
    8.
    发明申请
    METHODS, STORAGE DEVICES, AND SYSTEMS FOR PROMOTING THE ENDURANCE OF NON-VOLATILE SOLID-STATE MEMORY COMPONENTS 有权
    用于促进非挥发性固态存储器组件的耐久性的方法,存储设备和系统

    公开(公告)号:US20120166716A1

    公开(公告)日:2012-06-28

    申请号:US13337482

    申请日:2011-12-27

    IPC分类号: G06F12/02 G06F12/00

    摘要: Solid-state mass storage devices, host computer systems, and methods of increasing the endurance of non-volatile solid-state memory components used therein. The memory components comprise memory cells organized in functional units that are adapted to receive units of data transferred from the host computer system and correspond to the functional units of the memory component. The level of programming for each cell is reduced by performing an analysis of the bit values of the units of data to be written to at least a first of the functional units of the memory component. Depending on the analysis of “0” and “1” bit values of the units of data to be written, the bit values are inverted before writing the units of data to the first memory component.

    摘要翻译: 固态大容量存储设备,主机系统以及增加其中使用的非易失性固态存储器组件的耐久性的方法。 存储器组件包括以功能单元组织的存储器单元,其适于接收从主计算机系统传送的数据单元并对应于存储器组件的功能单元。 通过对要写入存储器组件的至少第一功能单元的数据单元的位值进行分析来减小每个单元的编程级别。 根据要写入的数据单元的“0”和“1”位值的分析,在将数据单位写入第一存储器组件之前,将位值反转。

    Method of increasing DDR memory bandwidth in DDR SDRAM modules
    9.
    发明授权
    Method of increasing DDR memory bandwidth in DDR SDRAM modules 有权
    增加DDR SDRAM模块DDR内存带宽的方法

    公开(公告)号:US08151030B2

    公开(公告)日:2012-04-03

    申请号:US11138768

    申请日:2005-05-25

    IPC分类号: G06F12/00 G06F13/00

    摘要: The present invention provides a method of increasing DDR memory bandwidth in DDR SDRAM modules. DDR memory has an inherent feature called the Variable Early Read command, where the read command is issued one CAS latency before the termination of an ongoing data burst By using the Variable Early Read command the effect of the CAS latency is minimized in terms of the effect on bandwidth. The enhanced bandwidth technology achieved with this invention optimizes the remaining two access latencies (tRP and tRCD) for optimal bandwidth. These optimizations in the SPD allow for much better bandwidth in real world applications.

    摘要翻译: 本发明提供了一种在DDR SDRAM模块中增加DDR存储器带宽的方法。 DDR存储器具有称为可变早期读取命令的固有功能,其中读取命令在正在进行的数据突发终止之前发出一个CAS延迟通过使用可变早期读取命令,CAS延迟的影响在效果方面被最小化 带宽。 通过本发明实现的增强带宽技术优化了用于最佳带宽的剩余的两个接入延迟(tRP和tRCD)。 SPD中的这些优化可以在现实世界的应用中实现更好的带宽。

    LARGE CAPACITY SOLID-STATE STORAGE DEVICES AND METHODS THEREFOR
    10.
    发明申请
    LARGE CAPACITY SOLID-STATE STORAGE DEVICES AND METHODS THEREFOR 有权
    大容量固态存储设备及其方法

    公开(公告)号:US20110283043A1

    公开(公告)日:2011-11-17

    申请号:US13181589

    申请日:2011-07-13

    IPC分类号: G06F12/06 G06F12/02

    摘要: Non-volatile storage devices and methods capable of achieving large capacity solid state drives containing multiple banks of memory devices. The storage devices include a printed circuit board, at least two banks of non-volatile solid-state memory devices, bank switching circuitry, a connector, and a memory controller. The bank switching circuitry is integrated onto the memory controller and functionally interposed between the banks of memory devices and the front end of the memory controller. The bank switching circuitry operates to switch accesses by the memory controller among the at least two banks.

    摘要翻译: 能够实现包含多组存储器件的大容量固态驱动器的非易失性存储设备和方法。 存储设备包括印刷电路板,至少两组非易失性固态存储器件,组开关电路,连接器和存储器控制器。 存储体切换电路被集成到存储器控制器上,功能上介于存储器件组和存储器控制器的前端之间。 存储体切换电路操作以在至少两个存储体之间切换存储​​器控制器的访问。