摘要:
Methods and systems for mass storage of data over two or more tiers of mass storage media that include nonvolatile solid-state memory devices, hard disk devices, and optionally volatile memory devices or nonvolatile MRAM in an SDRAM configuration. The mass storage media interface with a host through one or more PCIe lanes on a single printed circuit board.
摘要:
Methods and systems for mass storage of data over two or more tiers of mass storage media that include nonvolatile solid-state memory devices, hard disk devices, and optionally volatile memory devices or nonvolatile MRAM in an SDRAM configuration. The mass storage media interface with a host through one or more PCIe lanes on a single printed circuit board.
摘要:
A mass storage system comprising multiple memory cards, each with non-volatile memory components, a system bus interface for communicating with a system bus of a host system, and at least one ancillary interface. The ancillary interface is configured for direct communication of commands, addresses and data between the memory cards via a cross-link connector without accessing the system bus interface.
摘要:
A memory system and method for generating and transferring parity information within burst transactions of burst read and write transfers and without dedicated parity chips or parity data lines.
摘要:
A solid-state mass storage device and method of operating the storage device to anticipate the failure of at least one memory device thereof before a write endurance limitation is reached. The method includes assigning at least a first memory block of the memory device as a wear indicator that is excluded from use as data storage, using pages of at least a set of memory blocks of the memory device for data storage, writing data to and erasing data from each memory block of the set in program/erase (P/E) cycles, performing wear leveling on the set of memory blocks, subjecting the wear indicator to more P/E cycles than the set of memory blocks, performing integrity checks of the wear indicator and monitoring its bit error rate, and taking corrective action if the bit error rate increases.
摘要:
A solid state drive that uses over-provisioning of NAND flash memory blocks as part of housekeeping functionality, including deduplication and coalescence of data for efficient usage of NAND flash memory devices and maintaining sufficient numbers of erased blocks to promote write performance.
摘要:
A solid state drive having a non-volatile memory device and methods of operating the solid state drive to compare existing data stored on the memory device to subsequent data in an incoming data stream received by the solid state drive from a host system. If matching data are found, the solid state drive uses the existing data instead of writing the subsequent data to the memory device. Common data patterns can be shared among different files stored on the memory device.
摘要:
Solid-state mass storage devices, host computer systems, and methods of increasing the endurance of non-volatile solid-state memory components used therein. The memory components comprise memory cells organized in functional units that are adapted to receive units of data transferred from the host computer system and correspond to the functional units of the memory component. The level of programming for each cell is reduced by performing an analysis of the bit values of the units of data to be written to at least a first of the functional units of the memory component. Depending on the analysis of “0” and “1” bit values of the units of data to be written, the bit values are inverted before writing the units of data to the first memory component.
摘要:
The present invention provides a method of increasing DDR memory bandwidth in DDR SDRAM modules. DDR memory has an inherent feature called the Variable Early Read command, where the read command is issued one CAS latency before the termination of an ongoing data burst By using the Variable Early Read command the effect of the CAS latency is minimized in terms of the effect on bandwidth. The enhanced bandwidth technology achieved with this invention optimizes the remaining two access latencies (tRP and tRCD) for optimal bandwidth. These optimizations in the SPD allow for much better bandwidth in real world applications.
摘要:
Non-volatile storage devices and methods capable of achieving large capacity solid state drives containing multiple banks of memory devices. The storage devices include a printed circuit board, at least two banks of non-volatile solid-state memory devices, bank switching circuitry, a connector, and a memory controller. The bank switching circuitry is integrated onto the memory controller and functionally interposed between the banks of memory devices and the front end of the memory controller. The bank switching circuitry operates to switch accesses by the memory controller among the at least two banks.