公开(公告)号：US08044439B2

公开(公告)日：2011-10-25

申请号：US12088983

申请日：2006-09-28

申请人： Ryo Sakamoto ,  Masatoshi Iwata ,  Susumu Tsujikawa ,  Yoshiyuki Kobayashi

发明人： Ryo Sakamoto ,  Masatoshi Iwata ,  Susumu Tsujikawa ,  Yoshiyuki Kobayashi

IPC分类号： H01L27/148

CPC分类号： H01S5/18311 ,  H01L33/025 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0282

摘要： A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.

摘要翻译： 提供一种发光器件（1），其具有掩埋结构的电流阻挡层（9），电流阻挡层（9）的氧浓度高于发光层的一部分，电流阻挡层 厚度不小于5nm且不大于100nm。 它包括在电流阻挡层（9）下方的蚀刻停止层（24），该抗蚀剂层具有良好的抗氧化性。 提供发光装置（1）及其制造方法，使得该装置的电流约束效果得到改善，并且其输出在较低的正向电压下增加。

公开(公告)号：US07989799B2

公开(公告)日：2011-08-02

申请号：US12225714

申请日：2007-03-27

申请人： Ryo Sakamoto ,  Masatoshi Iwata

发明人： Ryo Sakamoto ,  Masatoshi Iwata

IPC分类号： H01L29/06

CPC分类号： H01L33/105

摘要： Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layer 5 in which a quantum well layer 51 and a barrier layer 52 are alternately laminated; and reflective layers disposed both above and below the active layer 5, wherein assuming that a center-to-center distance of a plurality of the quantum well layers is L, a light emission wavelength of the surface light emitting element is λ, and an average refractive index of an optical length of a resonator, being a distance between the reflective layers is n, a condition of λ/(15×n)≦L≦λ/(10×n) is satisfied.

摘要翻译： 提供了具有高生产率，高发光输出和良好响应特性的表面发光元件，并且能够抑制发光所需的正向电压的增加。 根据本发明的表面发光元件是垂直空腔表面发光元件，其包括：交替层叠量子阱层51和阻挡层52的有源层5; 以及设置在有源层5的上方和下方的反射层，其中假设多个量子阱层的中心到中心距离为L，表面发光元件的发光波长为λ，平均 作为反射层之间的距离的谐振器的光学长度的折射率为n，满足λ/（15×n）＆nlE; L＆nlE;λ/（10×n）的条件。

公开(公告)号：US08115193B2

公开(公告)日：2012-02-14

申请号：US12770590

申请日：2010-04-29

申请人： Masatoshi Iwata ,  Ryo Sakamoto

发明人： Masatoshi Iwata ,  Ryo Sakamoto

IPC分类号： H01L29/06

CPC分类号： H01L33/105

摘要： A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ⅓ of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

摘要翻译： 其新颖的垂直谐振器型发光二极管具有其发光侧的反射层的简化结构，其耐受其向高温范围的发射输出功率的偏移，具有有源层5和第一反射器 在其光反射侧的层3和在其发光侧的第二反射器层9，其被形成为在它们之间夹住活性物质5，其中第一反射器层3和第二反射器层9中的每一个被构造成包括多个 形成的折射率彼此不同的两个交替的半导体层的对，并且第二反射器层9具有不小于所述第一反射器层的1/10并且不大于1/3的这种对的数量 3有。 当第一反射器层具有多个不小于11且不大于41的这种对时，可以增强发射输出功率。

公开(公告)号：US20090020777A1

公开(公告)日：2009-01-22

申请号：US12280551

申请日：2007-03-27

申请人： Masatoshi Iwata ,  Ryo Sakamoto

发明人： Masatoshi Iwata ,  Ryo Sakamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/105

摘要： A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ⅓ of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

摘要翻译： 其新颖的垂直谐振器型发光二极管具有其发光侧的反射层的简化结构，其耐受其向高温范围的发射输出功率的偏移，具有有源层5和第一反射器 在其光反射侧的层3和在其发光侧的第二反射器层9，其被形成为在它们之间夹住活性物质5，其中第一反射器层3和第二反射器层9中的每一个被构造成包括多个 形成的折射率彼此不同的两个交替的半导体层的对，并且第二反射层9具有不小于所述第一反射层9的1/10且不大于1/3的这种对的数量 反射层3具有。 当第一反射器层具有多个不小于11且不大于41的这种对时，可以增强发射输出功率。

公开(公告)号：US20090278163A1

公开(公告)日：2009-11-12

申请号：US12088983

申请日：2006-09-28

申请人： Ryo Sakamoto ,  Masatoshi Iwata ,  Susumu Tsujikawa ,  Yoshiyuki Kobayashi

发明人： Ryo Sakamoto ,  Masatoshi Iwata ,  Susumu Tsujikawa ,  Yoshiyuki Kobayashi

IPC分类号： H01L33/00

CPC分类号： H01S5/18311 ,  H01L33/025 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0282

摘要： A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.

摘要翻译： 提供一种发光器件（1），其具有掩埋结构的电流阻挡层（9），电流阻挡层（9）的氧浓度高于发光层的一部分，电流阻挡层 厚度不小于5nm且不大于100nm。 它包括在电流阻挡层（9）下方的蚀刻停止层（24），该抗蚀剂层具有良好的抗氧化性。 提供发光装置（1）及其制造方法，使得该装置的电流约束效果得到改善，并且其输出在较低的正向电压下增加。

公开(公告)号：US20090272963A1

公开(公告)日：2009-11-05

申请号：US12225714

申请日：2007-03-27

申请人： Ryo Sakamoto ,  Masatoshi Iwata

发明人： Ryo Sakamoto ,  Masatoshi Iwata

IPC分类号： H01L33/00

CPC分类号： H01L33/105

摘要： Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layer 5 in which a quantum well layer 51 and a barrier layer 52 are alternately laminated; and reflective layers disposed both above and below the active layer 5, wherein assuming that a center-to-center distance of a plurality of the quantum well layers is L, a light emission wavelength of the surface light emitting element is λ, and an average refractive index of an optical length of a resonator, being a distance between the reflective layers is n, a condition of λ/(15×n)≦L≦λ/(10×n) is satisfied.

摘要翻译： 提供了具有高生产率，高发光输出和良好响应特性的表面发光元件，并且能够抑制发光所需的正向电压的增加。 根据本发明的表面发光元件是垂直空腔表面发光元件，其包括：交替层叠量子阱层51和阻挡层52的有源层5; 以及设置在有源层5的上方和下方的反射层，其中假设多个量子阱层的中心到中心距离为L，表面发光元件的发光波长为λ，平均值 作为反射层之间的距离的谐振器的光学长度的折射率为n，满足λ/（15×n）<= L <=λ/（10×n）的条件。

公开(公告)号：US20120153440A1

公开(公告)日：2012-06-21

申请号：US13388804

申请日：2010-08-02

申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

IPC分类号： H01L29/38 ,  C30B25/18

CPC分类号： H01L29/7786 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/812

摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.

摘要翻译： 电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。 通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。 低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

公开(公告)号：US08904938B2

公开(公告)日：2014-12-09

申请号：US13498514

申请日：2010-09-01

申请人： Katsuya Sasaki ,  Hideaki Kitajima ,  Ryo Sakamoto ,  Takaaki Ohnishi

发明人： Katsuya Sasaki ,  Hideaki Kitajima ,  Ryo Sakamoto ,  Takaaki Ohnishi

IPC分类号： F42B3/00 ,  F42B3/10 ,  F42C19/12 ,  F42B3/12 ,  E04G23/08 ,  F42B3/11 ,  F42D3/04

CPC分类号： F42B3/11 ,  E04G23/083 ,  F42B3/00 ,  F42B3/124 ,  F42B3/128 ,  F42D3/04

摘要： A blasting cartridge includes a generally cylindrical blasting container, a blasting substance filled in the blasting container, a pair of leadwires contained in the blasting container, and a single thin metal wire connected to tip portions of the pair of leadwires. The leadwires and the thin metal wire are positioned within the blasting substance within the blasting container. The blasting substance is nitromethane, and the thin metal wire is formed of tungsten. With an electric discharge impact blasting apparatus, since the thin metal wire has a higher heating value than a copper wire because of its higher resistance and vaporizes at higher temperatures, it is possible to obtain a greater blasting force at lower voltages than with a blasting apparatus using a copper wire.

摘要翻译： 喷丸筒包括一般为圆柱形的爆破容器，装在爆破容器中的喷砂物质，一个包含在喷砂容器中的引线，以及连接到一对引线的尖端部分的单个细金属丝。 引线和细金属丝位于爆破容器内的爆破物质内。 爆破物质是硝基甲烷，细金属丝由钨形成。 利用放电冲击爆破装置，由于薄金属丝具有比铜线更高的发热量，因为其较高的电阻和较高的温度下蒸发，因此可以获得比用喷砂装置更低的电压下的更大的爆破力 使用铜线。

公开(公告)号：US20120091435A1

公开(公告)日：2012-04-19

申请号：US13319910

申请日：2010-05-10

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/207 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same.The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

摘要翻译： 提供了一种用于电子器件的外延衬底，其可以提高垂直击穿电压并提供其制造方法。 外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲层，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主层压体。 此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。 初始生长层由Ba1Alb1Gac1Ind1N材料制成。 此外，超晶格层叠体通过交替堆叠由Ba2Alb2Gac2Ind2N材料制成的第一层和由与第一层具有不同带隙的Ba3Alb3Gac3Ind3N材料制成的第二层而构成。

公开(公告)号：US08426893B2

公开(公告)日：2013-04-23

申请号：US13319910

申请日：2010-05-10

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

IPC分类号： H01L31/00

CPC分类号： H01L29/207 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

摘要翻译： 提供了一种用于电子器件的外延衬底，其可以提高垂直击穿电压并提供其制造方法。 外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲器，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主叠层。 此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。 初始生长层由Ba1Alb1Gac1Ind1N材料制成。 此外，超晶格层叠体通过交替堆叠由Ba2Alb2Gac2Ind2N材料制成的第一层和由与第一层具有不同带隙的Ba3Alb3Gac3Ind3N材料制成的第二层而构成。