公开(公告)号：US5855685A

公开(公告)日：1999-01-05

申请号：US720866

申请日：1996-10-03

申请人： Ryoki Tobe ,  Atsushi Sekiguchi ,  Masao Sasaki

发明人： Ryoki Tobe ,  Atsushi Sekiguchi ,  Masao Sasaki

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/00

CPC分类号： H01J37/321

摘要： By forming at least one annular groove in each of electrical insulation members provided between a plasma generating electrode and a processing chamber, the insulation performance of the electrical insulation members are prevented from degradation during deposition of conductive films onto a substrate. The plasma generating electrode is substantially a coil of one turn and provided with a pair of introduction portions passing through a wall of the processing chamber. An insulation ring made of quartz glass is installed between each of the introduction portion and the processing chamber. The insulation ring has a round through hole in the center of a disc and three concentric protrusions, each of which is in the shape of an annulus ring, are formed at one side of the disc (the side exposed in the processing chamber). Two annular grooves are made between the protrusions. Each of the protrusions are 50 mm high, 1 mm thick, and 1 mm wide.

摘要翻译： 通过在设置在等离子体产生电极和处理室之间的每个电绝缘构件中形成至少一个环形槽，可以防止在将导电膜沉积到衬底上时电绝缘构件的绝缘性能降低。 等离子体产生电极基本上是一圈的线圈，并且设置有穿过处理室的壁的一对引入部分。 由石英玻璃制成的绝缘环安装在导入部和处理室之间。 绝缘环在盘的中心具有圆形通孔，并且在盘的一侧（暴露在处理室中的一侧）上形成有三个同心的突起（每个都是环形环形）。 在突起之间形成两个环形槽。 每个突起都是50毫米高，1毫米厚和1毫米宽。

公开(公告)号：US5721021A

公开(公告)日：1998-02-24

申请号：US720867

申请日：1996-10-03

申请人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

发明人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

IPC分类号： C01G23/00 ,  C23C16/08 ,  C23C16/14 ,  C23C16/34 ,  C23C16/50 ,  C23C16/509 ,  C30B29/02 ,  C30B29/10 ,  C30B29/38 ,  H01J37/32 ,  H01L21/28 ,  H01L21/285 ,  H05H1/46 ,  H05H1/73 ,  C23C16/06

CPC分类号： H01J37/32174 ,  C23C16/08 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

摘要： A method of depositing a titanium-containing conductive thin film, which is capable of depositing a high-quality thin film having a low chlorine content by grounding, through a capacitor, a terminal of a plasma generating electrode disposed in a processing chamber. In the method, one of the introduction terminals of the plasma generating electrode is connected to a radio-frequency power source, the other terminal being grounded through the capacitor. Titanium tetrachloride, hydrogen gas, and nitrogen gas are introduced into the processing chamber at flowrates of 20 ml/min, 30 ml/min and 10 ml/min, respectively. The pressure in the processing chamber is set to about 1 Pa, and the temperature of the substrate is set to 450.degree. to 600.degree. C. A low-pressure, high-density plasma is generated with an output of the radio-frequency power source of 2.5 kW to deposit a titanium nitride film at a rate of about 30 nm/min. The resultant titanium nitride film has a chlorine content of 1% or less, metallic lustre and low resistance.

摘要翻译： 通过电容器将布置在处理室中的等离子体生成电极的端子通过电容器沉积能够沉积具有低氯含量的高质量薄膜的方法。 在该方法中，等离子体产生电极的引入端子之一连接到射频电源，另一端子通过电容器接地。 四氯化钛，氢气和氮气分别以20ml / min，30ml / min和10ml / min的流速引入处理室。 处理室中的压力设定为约1Pa，将基板的温度设定为450〜600℃。利用射频电源的输出产生低压，高密度等离子体 2.5kW，以约30nm / min的速率沉积氮化钛膜。 所得到的氮化钛膜的氯含量为1％以下，金属光泽和低电阻。

公开(公告)号：US5891349A

公开(公告)日：1999-04-06

申请号：US720868

申请日：1996-10-03

申请人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

发明人： Ryoki Tobe ,  Masao Sasaki ,  Atsushi Sekiguchi ,  Ken-ichi Takagi

IPC分类号： C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/321 ,  C23C16/509 ,  H05H1/46

摘要： A plasma enhanced CVD apparatus includes a processing chamber, a pumping system for evacuating the processing chamber, a gas inlet system for introducing a source gas, and a plasma generating electrode provided in the processing chamber for depositing a film on a substrate in the processing chamber by plasma generated by electrical power supplied to the plasma generating electrode; the plasma generating electrode has two terminals, one of the terminals is connected to a radio frequency power source and other of the terminals is grounded through an electrode potential controlling system; and the processing chamber is grounded through an inner wall potential controlling system. The present invention is further directed to a plasma enhanced CVD process, a dry etching apparatus, and a dry etch process.

摘要翻译： 等离子体增强CVD装置包括处理室，用于抽空处理室的泵送系统，用于引入源气体的气体入口系统和设置在处理室中的等离子体产生电极，用于在处理室中的基板上沉积膜 通过供给到等离子体发生电极的电力产生的等离子体; 等离子体产生电极具有两个端子，其中一个端子连接到射频电源，而其它端子通过电极电位控制系统接地; 并且处理室通过内壁电位控制系统接地。 本发明进一步涉及等离子体增强CVD工艺，干蚀刻装置和干蚀刻工艺。

公开(公告)号：US6080446A

公开(公告)日：2000-06-27

申请号：US63274

申请日：1998-04-21

申请人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

发明人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45576 ,  H01L21/28568

摘要： A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.

摘要翻译： 在加热到规定温度的基板的表面上的反应容器中制造氮化钛薄膜的方法，包括将四（二烷基氨基）钛（TDAAT）和第一载气混合以产生第一混合气体的步骤; 通过第一组喷嘴将第一混合气体进料到反应容器中; 将与四（二烷基氨基）钛反应的添加气体与第二载气混合以产生第二混合气体; 通过第二组喷嘴将第二混合气体进料到反应容器中; 同时控制TDAAT，添加气体，细丝和第二载气的流速; 以及通过第一混合气体和第二混合气体沉积氮化钛薄膜，同时将反应容器内的压力限制在0.1-15Pa的范围内。

公开(公告)号：US06468604B1

公开(公告)日：2002-10-22

申请号：US09453889

申请日：2000-03-03

申请人： Ryoki Tobe ,  Hiroshi Doi ,  Atsushi Sekiguchi

发明人： Ryoki Tobe ,  Hiroshi Doi ,  Atsushi Sekiguchi

IPC分类号： C23C800

CPC分类号： C23C16/34

摘要： A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0

摘要翻译： 一种在基板表面制造氮化钛薄膜的方法，化学气相沉积方法（CVD方法）包括向反应容器中提供中间二烷基氨基钛（TDAAT和氨），并将其在低于 100Pa的总压，其中源材料气体的分压PTDAAT相对于加入的氨气的分压PNH3设定在0

公开(公告)号：US06471781B1

公开(公告)日：2002-10-29

申请号：US09343702

申请日：1999-06-30

申请人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

发明人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45576 ,  H01L21/28568

摘要： A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.004-02 g/min, (c) a second flow controller capable of setting a flow rate of a first carrier gas mixed with the TDAAT to any level within a range of 100-1000 sccm, (d) a third flow controller capable of setting a flow rate of an added gas reactable with the TDAAT to any level within a range of 10-100 sccm, (e) a fourth flow controller capable of setting a flow rate of a second carrier gas being mixed with the added gas to any level within a range of 10-500 sccm, (f) a first supply conduit for mixing the TDAAT and the first carrier gas to create a first mixed gas and guiding the resulting first mixed gas into the reaction vessel, (g) a second supply conduit for mixing the added gas and the second carrier gas to create a second mixed gas and guiding the resulting second mixed gas into the reaction vessel, and (h) a shower head which is provided with a plurality of first nozzles connected to the first supply conduit, and a plurality of second nozzles connected to the second supply conduit, and which is configured such that the first and second mixed gases are fed into the reaction vessel through the nozzles.