公开(公告)号：US20130299936A1

公开(公告)日：2013-11-14

申请号：US13745957

申请日：2013-01-21

申请人： Ryota Takemura ,  Eitaro Ishimura

发明人： Ryota Takemura ,  Eitaro Ishimura

IPC分类号： H01L31/107 ,  H01L31/18

CPC分类号： H01L31/107 ,  H01L31/1075 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： An avalanche photodiode includes a substrate; an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate. A p-type region is present in parts of the window layer and the light-absorbing layer. Carbon is the dopant of the electric field controlling layer. Zn is the dopant of the p-type region. A bottom face of the p-type region is closer to the substrate than is an interface between the light-absorbing layer and the window layer.

摘要翻译： 雪崩光电二极管包括基板; 雪崩倍增层，p型电场控制层，光吸收层和顺序层叠在基板上的窗口层。 p型区域存在于窗口层和光吸收层的部分中。 碳是电场控制层的掺杂剂。 Zn是p型区域的掺杂剂。 p型区域的底面比光吸收层和窗口层之间的界面更靠近基板。

公开(公告)号：US08526478B2

公开(公告)日：2013-09-03

申请号：US13020028

申请日：2011-02-03

申请人： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

发明人： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

IPC分类号： H01S5/00

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G02B6/122 ,  G02B2006/12097 ,  G02F1/2257 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/34306

摘要： A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.

摘要翻译： 半导体光学集成元件包括：基板; 以及集成在基板上的激光二极管和调制器。 激光二极管包括具有芯层的嵌入式波导，其两侧嵌入半导体材料中。 调制器包括具有核心层的高台面脊波导，其两侧都不嵌入半导体材料中。 激光二极管和调制器中的核心层是条形的。

公开(公告)号：US20110305255A1

公开(公告)日：2011-12-15

申请号：US13020028

申请日：2011-02-03

申请人： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

发明人： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

IPC分类号： H01S5/026 ,  H01L33/00

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G02B6/122 ,  G02B2006/12097 ,  G02F1/2257 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/34306

摘要： A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.

摘要翻译： 半导体光学集成元件包括：基板; 以及集成在基板上的激光二极管和调制器。 激光二极管包括具有芯层的嵌入式波导，其两侧嵌入半导体材料中。 调制器包括具有核心层的高台面脊波导，其两侧都不嵌入半导体材料中。 激光二极管和调制器中的核心层是条形的。

公开(公告)号：US07875943B2

公开(公告)日：2011-01-25

申请号：US12475668

申请日：2009-06-01

申请人： Masaharu Nakaji ,  Eitaro Ishimura

发明人： Masaharu Nakaji ,  Eitaro Ishimura

IPC分类号： H01L31/0232

CPC分类号： G02B6/122 ,  H01L31/02327 ,  H01L31/105

摘要： A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion.

摘要翻译： 半导体光检测装置包括选择性地设置在Fe-InP衬底上的n接触层。 光波导层设置在n接触层上，并且包括依次层叠在n接触层上的n包层，光吸收层和p包覆层。 在n包层上设置Fe-InP电流阻挡层，使得光波导层的侧面埋设在Fe-InP电流阻挡层中。 p电极包括与光波导层的p包层电连接的接触电极，在接触电极的电流阻挡层的侧壁上延伸并在Fe-InP衬底上延伸的引出电极部 以及电极焊盘，其在所述电极焊盘与所述Fe-InP衬底的表面之间，在所述Fe-InP衬底的表面上设置有SiN膜，并且与所述引出电极部连接。

公开(公告)号：US20100006967A1

公开(公告)日：2010-01-14

申请号：US12327861

申请日：2008-12-04

申请人： Eitaro Ishimura ,  Masaharu Nakaji

发明人： Eitaro Ishimura ,  Masaharu Nakaji

IPC分类号： H01L31/0232

CPC分类号： H01L31/02327 ,  H01L31/02162 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/105 ,  Y02E10/544

摘要： A semiconductor photodetector comprises: a semiconductor substrate; a first multilayer reflective layer on a first surface of the semiconductor substrate and including semiconductor layers; a first optically-resonant layer on the first multilayer reflective layer; a second multilayer reflective layer on the first optically-resonant layer and including semiconductor layers; a light absorbing layer on the second multilayer reflective layer; a reflective film on the light absorbing layer; and an antireflective film on a second surface of the semiconductor substrate. The first optically-resonant layer has a larger thickness than the semiconductor layers of the first and second multilayer reflective layers. The combined optical thickness of the layers between the second multilayer reflective layer and the reflective film is not equal to the optical thickness of the first optically-resonant layer.

摘要翻译： 半导体光电检测器包括：半导体衬底; 半导体衬底的第一表面上的第一多层反射层，包括半导体层; 第一多层反射层上的第一光学共振层; 在所述第一光学谐振层上的第二多层反射层，并且包括半导体层; 在所述第二多层反射层上的光吸收层; 光吸收层上的反射膜; 以及在半导体衬底的第二表面上的抗反射膜。 第一光学共振层具有比第一和第二多层反射层的半导体层更大的厚度。 第二多层反射层和反射膜之间的层的组合光学厚度不等于第一光谐振层的光学厚度。

公开(公告)号：US20090294787A1

公开(公告)日：2009-12-03

申请号：US12269206

申请日：2008-11-12

申请人： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu

发明人： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu

IPC分类号： H01L33/00

CPC分类号： H01L31/105 ,  B82Y20/00 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1075 ,  H01S5/18361 ,  H01S5/323 ,  H01S2301/173

摘要： An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.

摘要翻译： 一种光半导体器件包括依次配置在半导体衬底上的第一导电类型的分布布拉格反射层，第一导电类型的失真拉伸层，光吸收层和第二导电类型的半导体层。 失真弛豫层与半导体基板相同。 分布布拉格反射层和光吸收层之间的层的总光学长度是检测到的入射光的波长的一半的整数倍。

公开(公告)号：US20090243013A1

公开(公告)日：2009-10-01

申请号：US12475668

申请日：2009-06-01

申请人： Masaharu Nakaji ,  Eitaro Ishimura

发明人： Masaharu Nakaji ,  Eitaro Ishimura

IPC分类号： H01L31/0232

CPC分类号： G02B6/122 ,  H01L31/02327 ,  H01L31/105

摘要： A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion.

摘要翻译： 半导体光检测装置包括选择性地设置在Fe-InP衬底上的n接触层。 光波导层设置在n接触层上，并且包括依次层叠在n接触层上的n包层，光吸收层和p包覆层。 在n包层上设置Fe-InP电流阻挡层，使得光波导层的侧面埋设在Fe-InP电流阻挡层中。 p电极包括与光波导层的p包层电连接的接触电极，在接触电极的电流阻挡层的侧壁上延伸并在Fe-InP衬底上延伸的引出电极部 以及电极焊盘，其在所述电极焊盘与所述Fe-InP衬底的表面之间，在所述Fe-InP衬底的表面上设置有SiN膜，并且与所述引出电极部连接。

公开(公告)号：US20080144994A1

公开(公告)日：2008-06-19

申请号：US11774639

申请日：2007-07-09

申请人： Masaharu Nakaji ,  Eitaro Ishimura

发明人： Masaharu Nakaji ,  Eitaro Ishimura

IPC分类号： G02B6/42 ,  H01L31/102

CPC分类号： H01L31/105 ,  H01L31/0352 ,  H01L31/1035 ,  H01L31/107

摘要： A buried-waveguide light detecting element includes an n-type cladding layer on a Fe—InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refractive index equal to or higher than that of the n-type cladding layer and undoped or having an impurity concentration of 1×1017 cm−3 or less, lower than the impurity concentration in the n-type light guide layer, a light absorption layer having a refractive index higher than that of the i-light guide layer, a p-type light guide layer, and a p-type cladding layer are successively layered in mesa form, from the Fe—InP substrate, and a blocking layer on the Fe—InP substrate and in which side walls of the waveguide are embedded.

摘要翻译： 掩埋波导光检测元件包括在Fe-InP衬底上的n型包覆层，n型包层的一部分上的波导，其中n型导光层，i型光导 层的折射率等于或高于n型包层的折射率，并且不掺杂或杂质浓度为1×10 -3 -3 -3以下，低于 n型导光层中的杂质浓度，折射率高于i导光层的光吸收层，p型导光层和p型包覆层依次层叠在 来自Fe-InP衬底的台面形状，以及Fe-InP衬底上的阻挡层，并且其中嵌入有波导的侧壁。

公开(公告)号：US07187013B2

公开(公告)日：2007-03-06

申请号：US11136466

申请日：2005-05-25

申请人： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu ,  Nobuyuki Tomita

发明人： Masaharu Nakaji ,  Eitaro Ishimura ,  Eiji Yagyu ,  Nobuyuki Tomita

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L31/03046 ,  H01L31/107 ,  H01L31/1075 ,  Y02E10/544

摘要： An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, has a thickness of 0.6 μm or less, and is located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer. The thickness of the semiconductor light-absorbing layer is 0.5 μm or more.

摘要翻译： 雪崩光电二极管具有改进的低噪声特性，高速响应特性和灵敏度。 雪崩光电二极管包括第一导电类型半导体层，第二导电类型半导体层，介于第一导电类型半导体层和第二导电类型半导体层之间的半导体倍增层，以及插入在半导体乘法 层和第二导电类型半导体层。 雪崩光电二极管还包括抑制半导体光吸收层中的电荷载流子的倍增的增殖抑制层，其厚度为0.6μm以下，位于半导体光吸收层与第二导电型半导体层之间。 半导体光吸收层的厚度为0.5μm以上。

公开(公告)号：US20060186501A1

公开(公告)日：2006-08-24

申请号：US11291936

申请日：2005-12-02

申请人： Eitaro Ishimura

发明人： Eitaro Ishimura

IPC分类号： H01L31/0232

CPC分类号： H01L31/109 ,  H01L31/107 ,  H01L31/18

摘要： A laminated structure including an InGaAs light absorption layer and an InP window layer on a n-type InP substrate. A p-type diffusion layer region is formed in an InP window layer. A depletion layer between the n-type InP substrate and the p-type diffusion layer region is formed when a voltage is applied between a cathode electrode and an anode electrode. The depletion layer is thicker in at least a portion of a region under the anode electrode than in a light detecting portion. In this case, the diffusion depth of the p-type diffusion layer region may be smaller in at least the portion of the region under the anode electrode than in the light detecting portion.

摘要翻译： 在n型InP衬底上包括InGaAs光吸收层和InP窗口层的层叠结构。 在InP窗口层中形成p型扩散层区域。 当在阴极电极和阳极电极之间施加电压时，形成n型InP衬底和p型扩散层区域之间的耗尽层。 在阳极电极下方的区域的至少一部分中，耗尽层比在光检测部分中更厚。 在这种情况下，p型扩散层区域的扩散深度在阳极电极下方的区域的至少部分比在光检测部分中更小。