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公开(公告)号：US12046616B2
公开(公告)日：2024-07-23
申请号：US17318231
申请日：2021-05-12
发明人： Seung Ki Baek , Kyung Ho Lee , Tae Sub Jung , Doo Sik Seol , Seung Ki Jung
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14614 , H01L27/14627 , H01L27/14636
摘要： An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.
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公开(公告)号：US10819929B2
公开(公告)日：2020-10-27
申请号：US16426445
申请日：2019-05-30
发明人： Tae Sub Jung , Dong Min Keum , Bum Suk Kim , Jung Saeng Kim , Jong Hoon Park , Min Jang
IPC分类号： H04N5/369 , H04N5/374 , H01L27/146
摘要： An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.
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公开(公告)号：US11843882B2
公开(公告)日：2023-12-12
申请号：US17406700
申请日：2021-08-19
发明人： Tae Sub Jung , Dong Min Keum , Bum Suk Kim , Jung Saeng Kim , Jong Hoon Park , Min Jang
IPC分类号： H01L27/146 , H04N25/702 , H04N25/76 , H04N25/704
CPC分类号： H04N25/702 , H01L27/14605 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H04N25/704 , H04N25/76 , H01L27/1463 , H01L27/1464 , H01L27/14627 , H01L27/14636
摘要： An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.
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公开(公告)号：US10950640B2
公开(公告)日：2021-03-16
申请号：US16551114
申请日：2019-08-26
发明人： Young Gu Jin , Yong Hun Kwon , Young Chan Kim , Sae Young Kim , Sung Young Seo , Moo Sup Lim , Tae Sub Jung , Sung Ho Choi
IPC分类号： H01L27/146
摘要： An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.
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公开(公告)号：US10341595B2
公开(公告)日：2019-07-02
申请号：US15948756
申请日：2018-04-09
发明人： Tae Sub Jung , Dong Min Keum , Bum Suk Kim , Jung Saeng Kim , Jong Hoon Park , Min Jang
IPC分类号： H04N5/369 , H04N5/374 , H01L27/146
摘要： An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.
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公开(公告)号：US11525922B2
公开(公告)日：2022-12-13
申请号：US16427576
申请日：2019-05-31
发明人： Young Gu Jin , Young Chan Kim , Tae Sub Jung , Yong Hun Kwon , Sung Young Seo , Moo Sup Lim , Sung Ho Choi
IPC分类号： H01L27/146 , G01S17/89 , G01S17/08
摘要： An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.
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公开(公告)号：US11456327B2
公开(公告)日：2022-09-27
申请号：US16524806
申请日：2019-07-29
发明人： Young Gu Jin , Young Chan Kim , Yong Hun Kwon , Eung Kyu Lee , Chang Keun Lee , Moo Sup Lim , Tae Sub Jung
IPC分类号： H01L27/146 , H01L31/167
摘要： An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.
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公开(公告)号：US20200286942A1
公开(公告)日：2020-09-10
申请号：US16524806
申请日：2019-07-29
发明人： Young Gu JIN , Young Chan Kim , Yong Hun Kwon , Eung Kyu Lee , Chang Keun Lee , Moo Sup Lim , Tae Sub Jung
IPC分类号： H01L27/146 , H01L31/167
摘要： An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.
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