公开(公告)号：US20190325930A1

公开(公告)日：2019-10-24

申请号：US16460284

申请日：2019-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGWOO KIM ,  BONG-SOO KIM ,  YOUNGBAE KIM ,  KIJAE HUR ,  GWANHYEOB KOH ,  HYEONGSUN HONG ,  YOOSANG HWANG

IPC: G11C11/00 ,  G11C5/02 ,  G11C14/00 ,  H01L27/108 ,  H01L23/528 ,  H01L27/24 ,  H01L49/02 ,  H01L45/00

Abstract: A semiconductor device including: a first memory section, a first peripheral circuit section, and a second peripheral circuit section that are disposed next to each other on a substrate; and a second memory section laterally spaced apart from the first memory section, the second peripheral circuit section and the second memory section disposed next to each other on the substrate, wherein the first memory section includes a plurality of first memory cells, each of the first memory cells including a cell transistor and a capacitor connected to the cell transistor, and the second memory section includes a plurality of second memory cells, each of the second memory cells including a variable resistance element and a select element coupled in series to each other, wherein the second memory cells are higher from the substrate than each of the capacitors.

公开(公告)号：US20180358555A1

公开(公告)日：2018-12-13

申请号：US16010447

申请日：2018-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： KILHO LEE ,  GWANHYEOB KOH ,  ILMOK PARK ,  Junhee LIM

IPC: H01L45/00 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G11C13/00 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/1157

CPC classification number: H01L45/1233 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C13/0004 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144

Abstract: Disclosed is a semiconductor device including first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.

公开(公告)号：US20190325960A1

公开(公告)日：2019-10-24

申请号：US16458594

申请日：2019-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGWOO KIM ,  BONG-SOO KIM ,  YOUNGBAE KIM ,  KIJAE HUR ,  GWANHYEOB KOH ,  HYEONGSUN HONG ,  YOOSANG HWANG

IPC: G11C14/00 ,  H01L45/00 ,  G11C5/02 ,  G11C13/00 ,  G11C11/00 ,  H01L23/528 ,  H01L27/24

Abstract: A semiconductor device includes: a first memory section, a first peripheral circuit section, and a second peripheral circuit section that are disposed on a substrate; and a second memory section and a wiring section that are stacked on the second peripheral circuit section, wherein the first memory section includes a plurality of first memory cells, each of the first memory cells including a cell transistor and a capacitor connected to the cell transistor, the second memory section includes a plurality of second memory cells, each of the second memory cells including a variable resistance element and a select element coupled in series to each other, and the wiring section includes a plurality of line patterns, wherein the line patterns and the second memory cells are higher than the capacitor with respect to the substrate.

公开(公告)号：US20200083429A1

公开(公告)日：2020-03-12

申请号：US16202360

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： KILHO LEE ,  GWANHYEOB KOH ,  YOONJONG SONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) devices are provided. The MRAM devices may include a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction and a conductive layer adjacent to the free layer of the MTJ. The conductive layer may include a horizontal portion and first and second protruding portions that protrude away from the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction. A side of the free layer and a side of the horizontal portion may form a straight side.