公开(公告)号：US20170133275A1

公开(公告)日：2017-05-11

申请号：US15413472

申请日：2017-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Hae KIM ,  Jin Wook LEE ,  Jong Ki JUNG ,  Myung II KANG ,  Kwang Yong YANG ,  Kwan Heum LEE ,  Byeong Chan LEE

IPC: H01L21/8234 ,  H01L21/308 ,  H01L29/08 ,  H01L21/311 ,  H01L27/092 ,  H01L29/78 ,  H01L27/088 ,  H01L29/165 ,  H01L27/11 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/3105

CPC classification number: H01L21/823431 ,  H01L21/308 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823864 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.

公开(公告)号：US20240266394A1

公开(公告)日：2024-08-08

申请号：US18639948

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Young LEE ,  Jin Wook LEE

IPC: H01L29/06 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0669 ,  H01L21/76895 ,  H01L21/823475 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.

公开(公告)号：US20140196778A1

公开(公告)日：2014-07-17

申请号：US14152325

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Wook LEE

IPC: H01L31/0272 ,  H01L31/0352

CPC classification number: H01L31/035218 ,  H01L31/032 ,  H01L31/078 ,  H01L51/0037 ,  H01L51/422 ,  Y02E10/549

Abstract: A light absorbing material may have an energy bandgap of greater than or equal to about 0.8 eV and an absorption coefficient of greater than about 2.1×105 cm−1 at about 0.8 eV.

Abstract translation: 光吸收材料可以具有大于或等于约0.8eV的能带隙，并且在约0.8eV处具有大于约2.1×10 5 cm -1的吸收系数。

公开(公告)号：US20250040122A1

公开(公告)日：2025-01-30

申请号：US18442228

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoo Ho JUNG ,  Ye Seul LEE ,  Jong Yeong MIN ,  Joon Suk PARK ,  Ji Ye BAEK ,  Jin Wook LEE

IPC: H10B12/00

Abstract: A semiconductor device includes a landing pad on a substrate; a lower electrode extending in a vertical direction on the landing pad, the lower electrode connected to the landing pad; a capacitor dielectric layer on the lower electrode; a doping layer between the lower electrode and the capacitor dielectric layer, the doping layer being in contact with each of the lower electrode and the capacitor dielectric layer, the doping layer is doped with first to third materials, the first material having a trivalent atom valence electron, the second material having a tetravalent atom valence electron, and the third material having a pentavalent atom valence electron; and an upper electrode on the capacitor dielectric layer.

公开(公告)号：US20220271123A1

公开(公告)日：2022-08-25

申请号：US17663202

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Young LEE ,  Jin Wook LEE

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L21/8234

Abstract: A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.