公开(公告)号：US20170229626A1

公开(公告)日：2017-08-10

申请号：US15493883

申请日：2017-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

IPC: H01L33/62 ,  H01L33/20 ,  H01L33/44 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US20160372646A1

公开(公告)日：2016-12-22

申请号：US15147315

申请日：2016-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon YOON ,  Hak-hwan KIM ,  Dae-sup KIM ,  Jeong-hee KIM ,  Dong-myung SHIN ,  Kwang-seok YUN

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/38 ,  H05B37/02 ,  H01L33/54 ,  H01L33/50 ,  H05B33/08 ,  H01L33/16 ,  H01L33/22

CPC classification number: H01L33/62 ,  H01L33/16 ,  H01L33/20 ,  H01L33/38 ,  H05B33/086

Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.

Abstract translation: LED封装包括基板，设置在基板上的发光结构，设置在发光结构上的电极结构和设置在电极结构上的外部连接端子，外部连接端子包括长轴和次要 轴。 外部连接端子的长轴垂直于基板的切割面。

公开(公告)号：US20150364652A1

公开(公告)日：2015-12-17

申请号：US14736217

申请日：2015-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。