SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20150364652A1

    公开(公告)日:2015-12-17

    申请号:US14736217

    申请日:2015-06-10

    IPC分类号: H01L33/38 H01L33/62

    摘要: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

    摘要翻译: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层,绝缘层,第二电极层,第二半导体层,有源层和第一半导体层,通过 基板与第一电极层电连接,第二触点通过基板,第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层,第二半导体层和有源层的接触孔而电连接到第一半导体层,并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。