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公开(公告)号：US10988685B2
公开(公告)日：2021-04-27
申请号：US15820781
申请日：2017-11-22
发明人： Jooyeon Ahn , Ha Il Kwon , Shang Hyeun Park , Nayoun Won , Eun Joo Jang , Shin Ae Jun
IPC分类号： C09K11/02 , C09K11/06 , C09K11/70 , C09K11/88 , F21V8/00 , H01L51/00 , H01L51/50 , H05B33/14 , B82Y20/00 , B82Y40/00
摘要： A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2: MAn Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and wherein, R1, L1, Y1, R, k1, and k2 are the same as defined in the specification.
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公开(公告)号：US10689511B2
公开(公告)日：2020-06-23
申请号：US15862197
申请日：2018-01-04
发明人： Jooyeon Ahn , Nayoun Won , Ha Il Kwon , Eun Joo Jang , Shin Ae Jun
IPC分类号： C08L57/10 , C08L53/00 , C08K5/5419 , C08K5/09 , C09K11/08 , C08K5/205 , C08K3/013 , C08F222/10 , H01L33/50 , C08F220/06 , C08L81/02 , C08G75/045 , C08K5/098 , C08K5/39 , C08K5/5435
摘要： A composition including: a plurality of quantum dots; a monomer combination including a first monomer having at least two thiol groups at terminal ends of the first monomer and a second monomer having at least two carbon-carbon double bonds at terminal ends of the second monomer; and an additive, a composite prepared therefrom, and an electronic device including same are disclosed. The additive includes a cyclosiloxane compound having a reactive moiety, a (meth)acrylate salt of a polyvalent metal, and a dithiocarbamate salt of a polyvalent metal, or a combination thereof, and wherein the reactive moiety includes a carbon-carbon double bond, a thiol group, or a combination thereof.
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公开(公告)号：US10889755B2
公开(公告)日：2021-01-12
申请号：US15819556
申请日：2017-11-21
发明人： Jinsuop Youn , Ha Il Kwon , Misun Kim , Jooyeon Ahn , Hyeyeon Yang , Bumjin Lee , Jongmin Lee , Shin Ae Jun , Hyunjoo Han
IPC分类号： C09K11/70 , C09K11/02 , F21V8/00 , G02F1/1335 , G02F1/13357
摘要： A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.
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公开(公告)号：US10703967B2
公开(公告)日：2020-07-07
申请号：US15820781
申请日：2017-11-22
发明人： Jooyeon Ahn , Ha Il Kwon , Shang Hyeun Park , Nayoun Won , Eun Joo Jang , Shin Ae Jun
IPC分类号： C09K11/02 , C09K11/70 , C09K11/88 , F21V8/00 , C09K11/06 , H01L51/00 , H01L51/50 , H05B33/14 , B82Y20/00 , B82Y40/00
摘要： A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2: MAn Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and wherein, R1, L1, Y1, R, k1, and k2 are the same as defined in the specification.
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公开(公告)号：US10676666B2
公开(公告)日：2020-06-09
申请号：US15675251
申请日：2017-08-11
发明人： Ha Il Kwon , Tae Gon Kim , Jooyeon Ahn , Nayoun Won , Shin Ae Jun , Eun Joo Jang
摘要： A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers.
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公开(公告)号：US11597876B2
公开(公告)日：2023-03-07
申请号：US17227668
申请日：2021-04-12
发明人： Hyeyeon Yang , Jooyeon Ahn , Tae Gon Kim , Jongmin Lee , Shin Ae Jun
IPC分类号： C09K11/62 , C09K11/56 , C09K11/70 , H05B33/14 , G03F7/20 , G03F7/004 , C09K11/88 , C09K11/02 , G02F1/1335 , B82Y40/00 , B82Y20/00 , B82Y30/00
摘要： A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.
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公开(公告)号：US11332666B2
公开(公告)日：2022-05-17
申请号：US17036068
申请日：2020-09-29
发明人： Jooyeon Ahn , Jongmin Lee , Taekhoon Kim , Shin Ae Jun , Tae Gon Kim , Garam Park
IPC分类号： C09K11/88 , C09K11/02 , H01L51/50 , C01G9/08 , C01B19/00 , C01G9/00 , C09K11/70 , C09K11/74 , H01L33/50 , B82Y30/00 , B82Y40/00 , B82Y20/00
摘要： A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.
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公开(公告)号：US12031070B2
公开(公告)日：2024-07-09
申请号：US17199613
申请日：2021-03-12
发明人： Jooyeon Ahn , Hyeyeon Yang , Tae Gon Kim , Jongmin Lee , Shin Ae Jun
IPC分类号： H01L35/24 , C08J5/18 , C09K11/06 , C09K11/54 , C09K11/56 , C09K11/62 , C09K11/70 , H01L51/00 , H10K50/115 , B82Y20/00 , B82Y30/00 , B82Y40/00
CPC分类号： C09K11/565 , C08J5/18 , C09K11/06 , C09K11/54 , C09K11/62 , C09K11/70 , H10K50/115 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C08J2300/12
摘要： A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.
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公开(公告)号：US12104107B2
公开(公告)日：2024-10-01
申请号：US18229709
申请日：2023-08-03
发明人： Garam Park , Tae Gon Kim , Jooyeon Ahn , Ji-Yeong Kim , Nayoun Won , Shin Ae Jun
IPC分类号： C09K11/88 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/08 , G02F1/13357 , H10K50/115 , H10K59/12 , H10K59/38
CPC分类号： C09K11/883 , C09K11/02 , C09K11/0883 , G02F1/133617 , H10K50/115 , H10K59/12 , H10K59/38 , B82Y20/00 , B82Y40/00
摘要： Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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10.发明授权公开(公告)号：US11795392B2
公开(公告)日：2023-10-24
申请号：US17234845
申请日：2021-04-20
发明人： Hyeyeon Yang , Jooyeon Ahn , Taekhoon Kim , Shang Hyeun Park , Nayoun Won , Mi Hye Lim , Shin Ae Jun
IPC分类号： C09K11/88 , C09K11/08 , C09K11/02 , F21V8/00 , H10K50/115 , H10K59/38 , B82Y40/00 , B82Y20/00
CPC分类号： C09K11/883 , C09K11/025 , C09K11/0883 , G02B6/005 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00
摘要： A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting layer surrounding the core and including a second semiconductor nanocrystal including indium and phosphorus; a first shell disposed between the core and the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof; and a second shell disposed on the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof, and wherein the quantum is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers (nm) to about 550 nm.
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