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    NON-VOLATILE STORAGE SYSTEM WITH DUAL BLOCK PROGRAMMING
    2.
    发明申请
    NON-VOLATILE STORAGE SYSTEM WITH DUAL BLOCK PROGRAMMING 审中-公开
    具有双块编程的非易失存储系统

    公开(公告)号：US20140185351A1

    公开(公告)日：2014-07-03

    申请号：US14201899

    申请日：2014-03-09

    Applicant: SANDISK 3D LLC

    Inventor： Tianhong Yan ,  Tz-yi Liu ,  Roy E. Scheuerlein

    IPC: G11C13/00 ,  G11C5/02

    CPC classification number: G11C13/0069 ,  G11C5/02 ,  G11C13/0023 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/77

    Abstract: A non-volatile storage system is disclosed that includes a plurality of blocks of non-volatile storage elements, a plurality of word lines connected to the blocks of non-volatile storage elements such that each word line is connected to adjacent blocks of non-volatile storage elements, a plurality of bit lines connected to the blocks of non-volatile storage elements, multiple sets of word lines drivers such that each set of word line drivers is positioned between two adjacent blocks for driving word lines connected to the two adjacent blocks, global data lines, local data lines in selective communication with the bit lines, one or more selection circuits that selectively connect the global data lines to selected local data lines and connect unselected local data lines to one or more unselected bit line signals and control circuitry in communication with the one or more selection circuits and the global data lines. The control circuitry concurrently programs non-volatile storage elements of two adjacent blocks by applying programming signals on word lines connected to the two adjacent blocks and applying programming signals on appropriate bit lines via the global data lines and the one or more selection circuits.

    Abstract translation: 公开了一种非易失性存储系统，其包括多个非易失性存储元件块，连接到非易失性存储元件的块的多个字线，使得每个字线连接到非易失性存储元件的相邻块 存储元件，连接到非易失性存储元件块的多个位线，多组字线驱动器，使得每组字线驱动器位于两个相邻块之间，用于驱动连接到两个相邻块的字线， 全局数据线，与位线选择性通信的本地数据线，一个或多个选择电路，其选择性地将全局数据线连接到选定的本地数据线，并将未选择的本地数据线连接到一个或多个未选位线信号和控制电路 与一个或多个选择电路和全局数据线的通信。 控制电路通过在连接到两个相邻块的字线上应用编程信号并经由全局数据线和一个或多个选择电路在适当的位线上施加编程信号来同时对两个相邻块的非易失性存储元件进行编程。

    Independent set/reset programming scheme
    3.
    发明授权
    Independent set/reset programming scheme 有权
    独立设置/复位编程方案

    公开(公告)号：US09442663B2

    公开(公告)日：2016-09-13

    申请号：US14547473

    申请日：2014-11-19

    Applicant: SANDISK 3D LLC

    Inventor： Tianhong Yan ,  Tz-yi Liu

    IPC: G06F12/00 ,  G06F3/06

    CPC classification number: G06F3/0616 ,  G06F3/061 ,  G06F3/0625 ,  G06F3/0634 ,  G06F3/0644 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  Y02D10/154

    Abstract: Methods for operating a non-volatile memory that includes a plurality of memory arrays in which each memory array of the plurality of memory arrays may independently perform a SET operation, a RESET operation, or a read operation are described. The ability to independently SET or RESET memory arrays allows a SET operation to be performed on a first set of memory cells within a first memory array at the same time as a RESET operation is performed on a second set of memory cells within a second memory array. In some cases, the first memory array may be associated with a first memory bay and the second memory array may be associated with a second memory bay. Each memory bay may include a memory array, read/write circuits, and control circuitry for determining memory cell groupings and programming memory cells within the memory array based on the memory cell groupings.

    Abstract translation: 描述了包括多个存储器阵列的非易失性存储器的方法，其中多个存储器阵列的每个存储器阵列可以独立地执行SET操作，RESET操作或读取操作。 独立地设置或重置存储器阵列的能力允许在第一存储器阵列内的第一组存储器单元上执行SET操作，同时对第二存储器阵列中的第二组存储器单元执行复位操作 。 在一些情况下，第一存储器阵列可以与第一存储器托架相关联，并且第二存储器阵列可以与第二存储器托架相关联。 每个存储器托架可以包括存储器阵列，读/写电路和用于基于存储器单元分组来确定存储器单元分组和编程存储器阵列内的存储器单元的控制电路。

    INDEPENDENT SET/RESET PROGRAMMING SCHEME
    4.
    发明申请
    INDEPENDENT SET/RESET PROGRAMMING SCHEME 有权
    独立设置/复位编程方案

    公开(公告)号：US20160139828A1

    公开(公告)日：2016-05-19

    申请号：US14547473

    申请日：2014-11-19

    Applicant: SANDISK 3D LLC

    Inventor： Tianhong Yan ,  Tz-yi Liu

    IPC: G06F3/06

    CPC classification number: G06F3/0616 ,  G06F3/061 ,  G06F3/0625 ,  G06F3/0634 ,  G06F3/0644 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  Y02D10/154

    Abstract: Methods for operating a non-volatile memory that includes a plurality of memory arrays in which each memory array of the plurality of memory arrays may independently perform a SET operation, a RESET operation, or a read operation are described. The ability to independently SET or RESET memory arrays allows a SET operation to be performed on a first set of memory cells within a first memory array at the same time as a RESET operation is performed on a second set of memory cells within a second memory array. In some cases, the first memory array may be associated with a first memory bay and the second memory array may be associated with a second memory bay. Each memory bay may include a memory array, read/write circuits, and control circuitry for determining memory cell groupings and programming memory cells within the memory array based on the memory cell groupings.

    Abstract translation: 描述了包括多个存储器阵列的非易失性存储器的方法，其中多个存储器阵列的每个存储器阵列可以独立地执行SET操作，RESET操作或读取操作。 独立地设置或重置存储器阵列的能力允许在第一存储器阵列内的第一组存储器单元上执行SET操作，同时对第二存储器阵列中的第二组存储器单元执行复位操作 。 在一些情况下，第一存储器阵列可以与第一存储器托架相关联，并且第二存储器阵列可以与第二存储器托架相关联。 每个存储器托架可以包括存储器阵列，读/写电路和用于基于存储器单元分组来确定存储器单元分组和编程存储器阵列内的存储器单元的控制电路。

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