公开(公告)号：US20240105622A1

公开(公告)日：2024-03-28

申请号：US17934676

申请日：2022-09-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ramy Nashed Bassely SAID ,  Jiahui YUAN ,  Lito De La RAMA

IPC: H01L23/535 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582

CPC classification number: H01L23/535 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A memory device includes a horizontal source layer which is laterally separated into laterally isolated portions located in adjacent memory blocks by a dielectric backside trench fill structure or a source isolation dielectric structure.

公开(公告)号：US20240172431A1

公开(公告)日：2024-05-23

申请号：US18425996

申请日：2024-01-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： James KAI ,  Johann ALSMEIER ,  Lito De La RAMA ,  Masaaki HIGASHITANI ,  Koichi MATSUNO ,  Marika GUNJI-YONEOKA ,  Makoto KOTO ,  Hisakazu OTOI ,  Masanori TSUTSUMI

IPC: H10B41/27 ,  G11C7/18 ,  G11C8/14 ,  H01L29/06 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H10B41/27 ,  G11C7/18 ,  G11C8/14 ,  H01L29/0653 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a plurality of source layers, where the electrically conductive layers include word lines and source-side select gate electrodes which are located between the plurality of source layers and the word lines in a vertical direction, groups of memory openings vertically extending through the alternating stack, and groups of memory opening fill structures located in the groups of memory openings. The plurality of source layers are laterally spaced apart and electrically isolated from each other, and each respective one of the plurality of source layers contacts at least one respective group of the groups of memory opening fill structures.

公开(公告)号：US20240105623A1

公开(公告)日：2024-03-28

申请号：US17934685

申请日：2022-09-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ramy Nashed Bassely SAID ,  Jiahui YUAN ,  Lito De La RAMA

IPC: H01L23/535 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582

CPC classification number: H01L23/535 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A memory device includes a horizontal source layer which is laterally separated into laterally isolated portions located in adjacent memory blocks by a dielectric backside trench fill structure or a source isolation dielectric structure.