利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.02 秒)

    NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
    3.
    发明申请
    NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF 审中-公开
    非易失性存储器件及其编程方法

    公开(公告)号：US20150221376A1

    公开(公告)日：2015-08-06

    申请号：US14567639

    申请日：2014-12-11

    申请人： YOON-HEE CHOI ,  SANG-WAN NAM ,  KANG-BIN LEE

    发明人： YOON-HEE CHOI ,  SANG-WAN NAM ,  KANG-BIN LEE

    IPC分类号： G11C16/10 ,  G11C16/34 ,  G11C16/04

    CPC分类号： G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

    摘要： A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.

    摘要翻译： 编程方法是用于编程非易失性存储器件，其包括垂直于衬底设置并连接在位线和公共源极线之间的多个串。 编程方法包括将公共源线设置为预定电压，浮置设置公共源线，对连接到所选字线的存储器单元执行编程操作，以及对存储器单元执行验证操作。

    NONVOLATILE MEMORY DEVICE AND METHOD OF ERASING NONVOLATILE MEMORY DEVICE
    4.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF ERASING NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件和非易失性存储器件的擦除方法

    公开(公告)号：US20150179271A1

    公开(公告)日：2015-06-25

    申请号：US14501352

    申请日：2014-09-30

    申请人： SANG-WAN NAM ,  KANG-BIN LEE ,  KIHWAN CHOI

    发明人： SANG-WAN NAM ,  KANG-BIN LEE ,  KIHWAN CHOI

    IPC分类号： G11C16/16 ,  G11C11/16 ,  G11C13/00

    CPC分类号： G11C16/16 ,  G11C11/16 ,  G11C16/0483

    摘要： A method is provided for erasing a nonvolatile memory device, including multiple memory blocks formed in a direction perpendicular to a substrate, each memory block having multiple strings connected to a bit line. The method includes selecting a memory block to be erased using a power supply voltage; unselecting a remaining memory block, other than the selected memory block, using a negative voltage; setting a bias condition to reduce leakage currents of the unselected memory block; and performing an erase operation on the selected memory block.

    摘要翻译： 提供了一种用于擦除非易失性存储器件的方法，包括沿垂直于衬底的方向形成的多个存储块，每个存储块具有连接到位线的多个串。 该方法包括使用电源电压选择要擦除的存储器块; 使用负电压取消选择存储块以外的剩余存储块; 设置偏置条件以减少未选择的存储器块的漏电流; 以及对所选存储块执行擦除操作。

    NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME
    6.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME 有权
    非易失性存储器件及其编程方法

    公开(公告)号：US20150221375A1

    公开(公告)日：2015-08-06

    申请号：US14527461

    申请日：2014-10-29

    申请人： YOON-HEE CHOI ,  SANG-WAN NAM ,  KANG-BIN LEE

    发明人： YOON-HEE CHOI ,  SANG-WAN NAM ,  KANG-BIN LEE

    IPC分类号： G11C16/10 ,  G11C16/34

    CPC分类号： G11C16/10 ,  G11C7/04 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/30 ,  G11C16/3459

    摘要： In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

    摘要翻译： 在编程三维非易失性存储器件的方法中，程序循环至少执行一次，其中程序循环包括编程步骤，用于对存储单元之间的选定存储单元进行编程，以及验证步骤，用于验证所选择的存储器 单元格是否通过程序传递。 在对所选存储单元的编程中，可以改变施加到共同连接到串的公共源极线的电压电平。 因此，在程序运行中，能够提高提升效率的同时，能够减小对公共源极线进行充放电所需要的功耗。