公开(公告)号：US09748195B2

公开(公告)日：2017-08-29

申请号：US14933145

申请日：2015-11-05

申请人： SEKISUI CHEMICAL CO., LTD.

发明人： Sayaka Wakioka ,  Hiroaki Nakagawa ,  Yoshio Nishimura ,  Shujiro Sadanaga

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L23/00 ,  H01L21/768 ,  C09J163/00 ,  C08K9/06 ,  H01L21/56

CPC分类号： H01L24/29 ,  C08K9/06 ,  C09J163/00 ,  H01L21/563 ,  H01L21/76841 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83091 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/83986 ,  H01L2224/9205 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/20106 ,  H01L2924/3512 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/05442 ,  H01L2924/00012

摘要： The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

公开(公告)号：US09209155B2

公开(公告)日：2015-12-08

申请号：US14391781

申请日：2013-08-05

申请人： SEKISUI CHEMICAL CO., LTD.

发明人： Sayaka Wakioka ,  Hiroaki Nakagawa ,  Yoshio Nishimura ,  Shujiro Sadanaga

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  C09J163/00

CPC分类号： H01L24/29 ,  C08K9/06 ,  C09J163/00 ,  H01L21/563 ,  H01L21/76841 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83091 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/83986 ,  H01L2224/9205 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/20106 ,  H01L2924/3512 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/05442 ,  H01L2924/00012

摘要： The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

摘要翻译： 本发明的目的在于提供一种半导体器件的制造方法，该方法能够通过抑制空穴来实现高的可靠性。 本发明还旨在提供一种用于制造半导体器件的方法的倒装芯片安装粘合剂。 半导体器件的制造方法技术领域本发明涉及半导体器件的制造方法，其特征在于，包括：步骤1，通过粘合剂将半导体芯片定位在基板上，所述半导体芯片具有各自具有由焊料构成的端部的凸块电极; 在焊料的熔点或更高温度下加热半导体芯片以进行焊接并将半导体芯片的凸块电极接合到基板的电极部分的步骤2，并且同时临时固定粘合剂; 以及步骤3，通过在加压气氛下加热所述粘合剂来除去空隙，其中所述粘合剂具有100kJ / mol以下的活化能和Dgr; E，在260℃下2秒的反应速率为20％以下， 并且通过差示扫描量热法和小泽法测定，在260℃下4秒钟的反应速率为40％以下。

公开(公告)号：US20150064847A1

公开(公告)日：2015-03-05

申请号：US14391781

申请日：2013-08-05

申请人： SEKISUI CHEMICAL CO., LTD.

发明人： Sayaka Wakioka ,  Hiroaki Nakagawa ,  Yoshio Nishimura ,  Shujiro Sadanaga

IPC分类号： H01L23/00

CPC分类号： H01L24/29 ,  C08K9/06 ,  C09J163/00 ,  H01L21/563 ,  H01L21/76841 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83091 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83204 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/83986 ,  H01L2224/9205 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/20106 ,  H01L2924/3512 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/05442 ,  H01L2924/00012

摘要： The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

摘要翻译： 本发明的目的在于提供一种半导体器件的制造方法，该方法能够通过抑制空穴来实现高的可靠性。 本发明还旨在提供一种用于制造半导体器件的方法的倒装芯片安装粘合剂。 半导体器件的制造方法技术领域本发明涉及半导体器件的制造方法，其特征在于，包括：步骤1，通过粘合剂将半导体芯片定位在基板上，所述半导体芯片具有各自具有由焊料构成的端部的凸块电极; 在焊料的熔点或更高温度下加热半导体芯片以进行焊接并将半导体芯片的凸块电极接合到基板的电极部分的步骤2，并且同时临时固定粘合剂; 以及步骤3，通过在加压气氛下加热所述粘合剂来除去空隙，其中所述粘合剂具有100kJ / mol以下的活化能和Dgr; E，在260℃下2秒的反应速率为20％以下， 并且通过差示扫描量热法和小泽法测定，在260℃下4秒钟的反应速率为40％以下。