公开(公告)号：US20240376252A1

公开(公告)日：2024-11-14

申请号：US18285036

申请日：2022-03-31

Applicant: SEKISUI CHEMICAL CO., LTD.

Inventor： Mikitoshi SUEMATSU ,  Takahiro URAYAMA ,  Toshio ENAMI ,  Kenichiro SATO

IPC: C08G59/06 ,  C08K5/00 ,  C08K9/12 ,  C09J163/00

Abstract: Provided is a curable resin composition capable of forming a member having excellent coating workability and excellent light-shielding properties in the visible light region to the near-infrared region. The curable resin composition having light-shielding properties includes an epoxy resin and a composite containing a carbon material having a graphene layered structure and a resin, the curable resin composition having a content of the composite of 0.1 wt % or more and 30 wt % or less with respect to the entire curable resin composition.

公开(公告)号：US20240088570A1

公开(公告)日：2024-03-14

申请号：US18273125

申请日：2022-01-28

Applicant: SEKISUI CHEMICAL CO., LTD.

Inventor： Hiroyuki NOMOTO ,  Toshio ENAMI

IPC: H01Q15/14

CPC classification number: H01Q15/14

Abstract: Provided are a structure and a building material that are capable of reflecting radio waves over a wide range of space. Provided is a structure comprising a radio wave reflector including a radio wave reflecting material for reflecting radio waves, wherein when the radio wave reflector is caused to reflect a radio wave at an incident angle of an incident wave of 15 degrees or more and 75 degrees or less at a frequency of the incident wave of 3 GHz or more and 5 GHz or less, 25 GHz or more and 30 GHz or less, or 150 GHz or more and 300 GHz or less, the intensity of a reflective wave as specular reflection of the incident wave is −30 dB or more relative to the incident wave, and in a virtual plane including an incident direction of the incident wave and a reflection direction of the reflective wave, when reception angular positions of the reflective wave are varied within an angle range of −15 degrees or more and +15 degrees or less with respect to the specular reflection direction, kurtosis of distribution of intensity of the reflective wave at each of the reception angular positions is −0.4 or less at least at one frequency.

公开(公告)号：US20170183548A1

公开(公告)日：2017-06-29

申请号：US15304950

申请日：2015-03-25

Applicant: SEKISUI CHEMICAL CO., LTD.

Inventor： Mai NAGATA ,  Kohei TAKEDA ,  Toshio ENAMI

IPC: C09J163/00 ,  H01L23/00 ,  C09J133/00 ,  C01B33/18 ,  C09J7/02 ,  H01L25/065 ,  C09C1/30

CPC classification number: C09J163/00 ,  C01B33/18 ,  C01P2004/32 ,  C01P2004/62 ,  C01P2004/64 ,  C08G59/42 ,  C08G59/5073 ,  C08K3/013 ,  C08K3/36 ,  C08K2201/014 ,  C08L33/06 ,  C09C1/30 ,  C09J7/10 ,  C09J133/00 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2433/00 ,  C09J2463/00 ,  H01B1/20 ,  H01L21/52 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16146 ,  H01L2224/271 ,  H01L2224/29006 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/29388 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/83948 ,  H01L2224/9211 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0665 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/05442

Abstract: The present invention aims to provide an adhesive film for a semiconductor chip with a through electrode, which is used for stacking multiple semiconductor chips each with a through electrode on a semiconductor wafer, which can favorably connect the through electrodes while suppressing formation of voids, and which can reduce the length of burrs protruding around the semiconductor chips.The present invention relates to an adhesive film for a semiconductor chip with a through electrode, to be used for stacking multiple semiconductor chips each with a through electrode on a semiconductor wafer, the adhesive film having a minimum melt viscosity of 50 to 2500 Pa·s and a thixotropic index at 140° C. of 8 or lower.