INSPECTING APPARATUS AND SEMICONDUCTOR MANUFACTURING EQUIPMENT INCLUDING THE SAME

    公开(公告)号:US20250085320A1

    公开(公告)日:2025-03-13

    申请号:US18798841

    申请日:2024-08-09

    Applicant: SEMES CO,.LTD.

    Abstract: An inspecting apparatus capable of performing an inspection of equipment without destroying the equipment and semiconductor manufacturing equipment including the inspecting apparatus are provided. The inspecting apparatus includes: a measurement module measuring a first impedance at a first port, and a second impedance at a second port; a comparison module comparing the first and second impedances; and a determination module determining whether the equipment part is operating properly based on a result of the comparison of the first and second impedances, wherein the first impedance includes a first resistance and a first reactance, the second impedance includes a second resistance and a second reactance, and the determination module determines whether the equipment part is operating properly based on at least one of a result of the comparison of the first and second resistances and a result of the comparison of the first and second reactances.

    SUBSTRATE PROCESSING DEVICE AND IMPEDANCE MATCHING METHOD
    2.
    发明申请
    SUBSTRATE PROCESSING DEVICE AND IMPEDANCE MATCHING METHOD 审中-公开
    基板处理装置和阻抗匹配方法

    公开(公告)号:US20130105082A1

    公开(公告)日:2013-05-02

    申请号:US13664970

    申请日:2012-10-31

    Abstract: Provided are a substrate processing device and an impedance matching method. The substrate processing device includes: a high frequency power source for generating high frequency power; a process chamber for performing a plasma process by using the high frequency power; a matching circuit for compensating for a changed impedance of the process chamber; and a transformer disposed between the process chamber and the matching circuit in order to reduce the impedance of the process chamber.

    Abstract translation: 提供了基板处理装置和阻抗匹配方法。 基板处理装置包括:高频电源,用于产生高频电力; 处理室,用于通过使用高频功率来执行等离子体处理; 用于补偿处理室的改变的阻抗的匹配电路; 以及设置在处理室和匹配电路之间的变压器,以便减小处理室的阻抗。

    APPARATUS FOR CONTROLLING TEMPERATURE OF SUBSTRATE, APPARATUS FOR TREATING SUBSTRATE COMPRISING THE SAME, AND METHOD OF CONTROLLING THE SAME

    公开(公告)号:US20170318627A1

    公开(公告)日:2017-11-02

    申请号:US15463319

    申请日:2017-03-20

    CPC classification number: F27D7/06 H05B3/283

    Abstract: An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

    PLASMA ANTENNA AND APPARATUS FOR GENERATING PLASMA HAVING THE SAME
    4.
    发明申请
    PLASMA ANTENNA AND APPARATUS FOR GENERATING PLASMA HAVING THE SAME 审中-公开
    用于产生具有相同等离子体的等离子体天线和装置

    公开(公告)号:US20140144584A1

    公开(公告)日:2014-05-29

    申请号:US14091605

    申请日:2013-11-27

    CPC classification number: H01J37/32091 H01J37/3211

    Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.

    Abstract translation: 提供了一种等离子体天线和包括该等离子体天线的等离子体产生装置。 等离子体天线包括通过使用RF信号来感应电磁场的第一天线,通过使用RF信号来感应电磁场的第二天线以及连接在第一天线的输入端和第二天线的输入端之间的电容器。

    FILTER UNIT, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20200373125A1

    公开(公告)日:2020-11-26

    申请号:US16880221

    申请日:2020-05-21

    Abstract: A substrate treating apparatus is disclosed. The substrate treating apparatus may include a chamber having a treating space defined therein, a support unit for supporting the substrate in the treating space, a heater power source for applying electric power to a heater in the support unit, a high-frequency power source for applying high-frequency power to a lower electrode in the support unit, and a filter unit installed at a line for connecting the heater power source with the heater to prevent high-frequency inflow. The filter unit may include a housing, one or more coils in the housing, and an adjustment member disposed between the housing and the coil. The adjustment member may be made of a non-magnetic material. The adjustment member may be spaced from the coil at a predefined spacing, and spaced apart from an inner wall of the housing or in contact with the housing inner wall.

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