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公开(公告)号:US10908503B2
公开(公告)日:2021-02-02
申请号:US16565661
申请日:2019-09-10
Applicant: SEMES CO., LTD.
Inventor: Kihoon Choi , Chan Young Heo , Do Heon Kim , Hae-Won Choi , Jaeseong Lee , Anton Koriakin , Ji Soo Jeong
Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.
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公开(公告)号:US10186419B2
公开(公告)日:2019-01-22
申请号:US14931004
申请日:2015-11-03
Applicant: Semes Co., Ltd.
Inventor: Kihoon Choi , In-Il Jung , Seong-Soo Kim , Yoon-Jong Ju
Abstract: Disclosed is an apparatus and method for treating a substrate. The method includes supplying cleaning particles to the substrate to clean the substrate. The cleaning particles are solid particles. The solid particles provide a shock wave to the substrate.
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公开(公告)号:US20240053685A1
公开(公告)日:2024-02-15
申请号:US18231727
申请日:2023-08-08
Applicant: SEMES CO., LTD.
Inventor: Youngdae Chung , Jihoon Jeong , Kihoon Choi , Taehee Kim , Sehoon Oh
CPC classification number: G03F7/70291 , G03F7/2043 , G03F7/091 , G03F7/70241 , G03F7/70875 , G03F7/70141
Abstract: Provided is a photomask processing apparatus including a light source, a photomask including a first surface provided with a plurality of patterns, an inspector configured to detect a target correction region including at least one target correction pattern, and a digital micromirror device (DMD) including a plurality of mirror blocks, and the DMD is further configured to switch, to the on state, mirror blocks corresponding to the target correction region of the first surface of the photomask among the plurality of mirror blocks, and switch, to the off state, mirror blocks corresponding to a non-correction region among the plurality of mirror blocks, the non-correction region being a region other than the target correction region on the first surface of the photomask.
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公开(公告)号:US11621159B2
公开(公告)日:2023-04-04
申请号:US16929190
申请日:2020-07-15
Applicant: SEMES CO., LTD.
Inventor: Do Heon Kim , Kihoon Choi , Chan Young Heo , Ki-Moon Kang
Abstract: Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.
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公开(公告)号:US10211074B2
公开(公告)日:2019-02-19
申请号:US15006359
申请日:2016-01-26
Applicant: Semes Co., Ltd
Inventor: Yoon Jong Ju , Kihoon Choi , Hyeon Jun Lee
Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a space for treating a substrate in the interior thereof, a spin head which supports and rotates the substrate inside the housing, and an ejection unit having a first nozzle member for ejecting a first treatment liquid onto the substrate positioned on the spin head. The first nozzle member includes a body having an ejection passage, through which the first treatment liquid flows, therein and a first discharge hole communicated with the ejection passage to eject the first treatment liquid onto the substrate, and a vibrator installed in the body to provide vibration for the first treatment liquid flowing through the ejection passage. The vibrator has an interference preventing recess for preventing an interference by reflective waves therein.
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公开(公告)号:US11685161B2
公开(公告)日:2023-06-27
申请号:US16920193
申请日:2020-07-02
Applicant: SEMES Co. Ltd.
Inventor: Donghwa Lee , Daigeon Yoon , Jaeyong Choi , Sanguk Son , Kihoon Choi , Daesung Kim
CPC classification number: B41J2/17513 , B41J2/17503 , B41J2/17553 , B41J2/17556 , B41J19/08
Abstract: An ink tank for a liquid chemical discharging apparatus configured to prevent equipment failure and improve durability by preventing scattering and backflow of a liquid chemical is described. The ink tank for a liquid chemical discharging apparatus includes: a liquid chemical receiving portion in which a liquid chemical is stored; a liquid chemical discharge port configured to supply the liquid chemical to an inkjet head; a pressure control port configured to control pressure of the liquid chemical receiving portion; and a partition wall provided in the liquid chemical receiving portion and configured to partition the liquid chemical receiving portion.
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公开(公告)号:US11004675B2
公开(公告)日:2021-05-11
申请号:US16129089
申请日:2018-09-12
Applicant: SEMES CO., LTD.
Inventor: Hae-Won Choi , Ki-Moon Kang , Kihoon Choi , Anton Koriakin , Chan Young Heo , Jaeseong Lee , Kwon Taek Lim , Yong Hun Kim , Sang Ho Lee
IPC: C11D7/36 , H01L21/02 , B08B3/08 , C09K13/08 , H01L21/67 , C11D7/34 , C11D11/00 , H01L21/687 , C11D7/50
Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.
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公开(公告)号:US10831103B2
公开(公告)日:2020-11-10
申请号:US16565661
申请日:2019-09-10
Applicant: SEMES CO., LTD.
Inventor: Kihoon Choi , Chan Young Heo , Do Heon Kim , Hae-Won Choi , Jaeseong Lee , Anton Koriakin , Ji Soo Jeong
Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.
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公开(公告)号:US20180373154A1
公开(公告)日:2018-12-27
申请号:US15995588
申请日:2018-06-01
Applicant: SEMES CO., LTD.
Inventor: Hae-Won Choi , Kihoon Choi , Ki-Moon Kang , Chan Young Heo , Anton Koriakin , Jaeseong Lee
IPC: G03F7/42 , H01L21/67 , H01L21/677 , H01L21/027 , H01L21/02 , G03F7/038 , G03F7/039 , G03F7/32 , G03F7/40 , G03F7/20
Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.
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公开(公告)号:US12211716B2
公开(公告)日:2025-01-28
申请号:US17664243
申请日:2022-05-20
Applicant: Semes Co., Ltd. , Samsung Electronics Co., Ltd.
Inventor: Jaeseong Lee , Kihoon Choi , Hae-Won Choi , Jihoon Jeong , Seohyun Kim , Young-Hoo Kim , Sangjine Park , Kuntack Lee
IPC: H01L21/67 , H01L21/687
Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.
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