公开(公告)号：US20150340482A1

公开(公告)日：2015-11-26

申请号：US14814106

申请日：2015-07-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  John Michael PARSEY, JR. ,  Ali SALIH ,  Prasad VENKATRAMAN

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/7783 ,  H01L21/845 ,  H01L27/0688 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789 ,  H01L29/785 ,  H01L29/872

Abstract: In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.

Abstract translation: 在一个实施例中，III族氮化物材料用于形成半导体器件。 在III族氮化物材料中形成翅片结构，并且栅极结构，源电极和漏电极形成为与翅片结构间隔开的关系。 鳍结构提供极性和半极性2DEG区域。 在一个实施例中，门结构被配置为控制极地2DEG区域中的电流。 屏蔽导体层包括在栅极结构之上并与半导体器件的漏极区间隔开。

公开(公告)号：US20140264369A1

公开(公告)日：2014-09-18

申请号：US14203299

申请日：2014-03-10

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji PADMANABHAN ,  John Michael PARSEY, JR. ,  Ali Salih ,  Prasad Venkatraman

IPC: H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7783 ,  H01L21/845 ,  H01L27/0688 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789 ,  H01L29/785 ,  H01L29/872

Abstract: In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.

Abstract translation: 在一个实施例中，III族氮化物材料用于形成半导体器件。 在III族氮化物材料中形成翅片结构，并且栅极结构，源电极和漏电极形成为与翅片结构间隔开的关系。 鳍结构提供极性和半极性2DEG区域。 在一个实施例中，门结构被配置为控制极地2DEG区域中的电流。 屏蔽导体层包括在栅极结构之上并与半导体器件的漏极区间隔开。

公开(公告)号：US20190043958A1

公开(公告)日：2019-02-07

申请号：US15856229

申请日：2017-12-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter MOENS ,  Piet VANMEERBEEK ,  Gary H. LOECHELT ,  John Michael PARSEY, JR.

IPC: H01L29/267 ,  H01L29/10 ,  H01L29/36 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/739

Abstract: An electronic device can include a transistor structure. In an embodiment, the transistor structure can include a channel region and a drift structure including different semiconductor base materials. In another embodiment, the transistor structure can include a source region and a drain structure including a first region, wherein the source region and the first region include different semiconductor base materials and have the same conductivity type. In another aspect, a process of forming an electronic device can include forming a semiconductor layer; forming a body region; patterning the body region and the semiconductor layer to define a trench having a sidewall; forming a first region of a drain structure along the sidewall of the trench, wherein the first region and body region include different semiconductor base materials and different conductivity types.