公开(公告)号：US20170162481A1

公开(公告)日：2017-06-08

申请号：US15440967

申请日：2017-02-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yusheng LIN ,  Roger Paul STOUT ,  Chee Hiong CHEW ,  Sadamichi TAKAKUSAKI ,  Francis J. CARNEY

IPC: H01L23/495 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L23/49548 ,  C04B37/021 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/402 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/52 ,  C04B2237/64 ,  C04B2237/82 ,  H01L21/4857 ,  H01L21/4871 ,  H01L21/565 ,  H01L23/142 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49586 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/72 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2924/0002 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

公开(公告)号：US20220375833A1

公开(公告)日：2022-11-24

申请号：US17816455

申请日：2022-08-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yusheng LIN ,  Roger Paul STOUT ,  Chee Hiong CHEW ,  Sadamichi TAKAKUSAKI ,  Francis J. CARNEY

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/15 ,  C04B37/02 ,  H01L23/14 ,  H01L23/373 ,  H01L23/538 ,  H01L23/31

Abstract: Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

公开(公告)号：US20210320054A1

公开(公告)日：2021-10-14

申请号：US16846778

申请日：2020-04-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Hiroshi INOGUCHI ,  Takashi NAGASHIMA ,  Roger Paul STOUT ,  Namrata KANTH

IPC: H01L23/495 ,  H01L23/367 ,  H01L23/498 ,  H01L23/373 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a leadframe, and a heatsink bonded to the leadframe. A semiconductor device may be mounted using the leadframe and positioned such that heat generated by the semiconductor device is conducted by the heatsink, with molding that encapsulates the leadframe, the heatsink, and the semiconductor device.