公开(公告)号：US20030148594A1

公开(公告)日：2003-08-07

申请号：US10289219

申请日：2002-11-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

IPC: C30B001/00

CPC classification number: H01L21/02691 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/67282 ,  H01L21/67294 ,  H01L27/1285

Abstract: To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a portion that needs to be left on the substrate after patterning is identified according to a mask. Then, a portion to be scanned by respective lasers are defined, so that a laser beam is irradiated twice in different scanning directions to a portion to be obtained at least through patterning and beam spots are impinged upon the scanned portion, thereby partially crystallizing the semiconductor film. In other words, in the invention, it is arranged in such a manner that a laser beam is not irradiated by scanning a laser beam across the entire semiconductor film but by scanning a laser beam twice at least to the absolutely necessary portion. According to the above arrangement, it is possible to save the time to irradiate a laser beam in waste to the semiconductor film at a portion to be removed through patterning, and the crystalline characteristics of the semiconductor film obtained after the patterning can be further enhanced.

Abstract translation: 为了提供能够提高基板处理效率的连续振荡激光装置，照射激光的方法以及使用该激光装置制造半导体装置的方法。 在整个半导体膜中，根据掩模来识别在图案化之后需要留在基板上的部分。 然后，定义要由相应激光器扫描的部分，使得激光束在不同的扫描方向上被照射到要获得的部分两次，至少通过图案化并且光束点被照射在扫描部分上，从而部分地使半导体 电影。 换句话说，在本发明中，其布置成使得激光束不通过扫描整个半导体膜上的激光束而被照射，而是通过至少对绝对必需部分进行两次扫描激光束而被照射。 根据上述结构，通过图案化，可以节省在要除去的部分向半导体膜照射浪费的激光的时间，并且可以进一步提高在图案化之后获得的半导体膜的结晶特性。

公开(公告)号：US20030089690A1

公开(公告)日：2003-05-15

申请号：US10237172

申请日：2002-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

IPC: B23K026/00

CPC classification number: H01L21/02683 ,  B23K26/0823 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  Y10S438/973

Abstract: Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.

公开(公告)号：US20040157413A1

公开(公告)日：2004-08-12

申请号：US10771404

申请日：2004-02-05

Applicant: Semiconductor Energy Laboratory Co., Ltd. ,  Sharp Kabushiki Kaisha

Inventor： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

IPC: C30B001/00 ,  H01L021/20 ,  H01L021/36

CPC classification number: H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5null1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5null1018/cm3 to 1null1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

Abstract translation: 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素加入到膜内的非晶结构和氧浓度小于5×10 18 / cm 3的半导体膜中。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入具有晶体结构的半导体膜，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 21 / cm 3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

公开(公告)号：US20030224550A1

公开(公告)日：2003-12-04

申请号：US10321839

申请日：2002-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Chiho Kokubo ,  Aiko Shiga ,  Yoshifumi Tanada ,  Shunpei Yamazaki

IPC: H01L021/00

CPC classification number: H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

Abstract: To provide a method of efficiently configuring a circuit requiring high inter-device consistency by using thin-film transistors. A semiconductor layer is formed on a substrate and is patterned into desired shapes to form first semiconductor islands. The first semiconductor islands are uniformly crystallized by laser irradiation within the surface areas thereof. Thereafter, the semiconductor layers are patterned into desired shapes to become active layers of the thin-film transistors layer. Active layers of all of thin-film transistors constituting one unitary circuit are formed of one of the first semiconductor islands in this case. Thus, the TFTs mutually realize high consistency.

Abstract translation: 提供通过使用薄膜晶体管来有效地配置需要高的器件间一致性的电路的方法。 在衬底上形成半导体层并将其图案化成所需的形状以形成第一半导体岛。 第一半导体岛在其表面区域内被激光照射均匀结晶。 此后，将半导体层图案化成所需的形状，成为薄膜晶体管层的有源层。 在这种情况下，构成一体电路的所有薄膜晶体管的有源层由第一半导体岛之一形成。 因此，TFT相互实现高一致性。

公开(公告)号：US20040248347A1

公开(公告)日：2004-12-09

申请号：US10883767

申请日：2004-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

Abstract: A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

Abstract translation: 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。

公开(公告)号：US20030171837A1

公开(公告)日：2003-09-11

申请号：US10300927

申请日：2002-11-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC: G06F019/00

CPC classification number: H01L21/02678 ,  B23K26/04 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/127 ,  H01L21/02683 ,  H01L21/2026

Abstract: Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

Abstract translation: 提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。 多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。 激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制 第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

公开(公告)号：US20030153182A1

公开(公告)日：2003-08-14

申请号：US10305367

申请日：2002-11-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

Abstract translation: 根据掩模掌握半导体膜上的应该留在基板上的每个区域。 然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。 光束点的低输出能量的每个部分被狭缝屏蔽。 在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。 利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

公开(公告)号：US20030089909A1

公开(公告)日：2003-05-15

申请号：US10265634

申请日：2002-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

IPC: G02F001/136 ,  H01L029/04 ,  H01L031/036

CPC classification number: H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5null1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5null1018/cm3 to 1null1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

Abstract translation: 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异的TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素加入到膜内的非晶结构和氧浓度小于5×10 18 / cm 3的半导体膜中。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入具有晶体结构的半导体膜，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 21 / cm 3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

公开(公告)号：US20030080100A1

公开(公告)日：2003-05-01

申请号：US10235942

申请日：2002-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura

IPC: B23K026/08 ,  B23K026/067

CPC classification number: B23K26/0823 ,  B23K2101/36

Abstract: To provide a continuous oscillation laser apparatus, and a manufacturing method of a semiconductor device using the continuous oscillation laser apparatus, which can enhance processing efficiency. A laser apparatus according to the present invention includes: a laser oscillation apparatus; a unit for rotating an object to be processed; a unit for moving the object to be processed toward a center of the rotation or toward an outside from the center; and an optical system for processing a laser light outputted from the laser oscillation apparatus and irradiating the processed laser light to a definite region in a moving range of the object to be processed, in which, while the object to be processed is rotated, the object to be processed is moved toward the center of the rotation or toward the outside from the center to move a position where the definite region and the object to be processed overlap.

Abstract translation: 提供一种连续振荡激光装置，以及使用该连续振荡激光装置的半导体装置的制造方法，能够提高处理效率。 根据本发明的激光装置包括：激光振荡装置; 用于旋转待处理物体的单元; 用于从所述中心朝向所述旋转中心或朝向外部移动被处理物体的单元; 以及光学系统，用于处理从激光振荡装置输出的激光，并将经处理的激光照射到待处理物体的移动范围内的确定区域，其中，当被处理物体旋转时，物体 被处理的物体从中心朝向旋转的中心或朝向外部移动，以移动定影区域和被处理物体重叠的位置。

公开(公告)号：US20040132266A1

公开(公告)日：2004-07-08

申请号：US10739105

申请日：2003-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC: C30B001/00

CPC classification number: H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

Abstract: Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

Abstract translation: 提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分结晶化。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。