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    Method of semiconductor device including step of cutting substrate at opening of insulating layer
    2.
    发明授权
    Method of semiconductor device including step of cutting substrate at opening of insulating layer 有权
    包括在绝缘层开口处切割衬底的步骤的半导体器件的方法

    公开(公告)号：US09257560B2

    公开(公告)日：2016-02-09

    申请号：US14246407

    申请日：2014-04-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroki Adachi ,  Kayo Kumakura

    IPC: H01L21/84 ,  H01L27/12 ,  H01L29/786

    CPC classification number: H01L29/78603 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/78606 ,  H01L2021/775

    Abstract: Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

    Abstract translation: 提供了一种具有由裂纹引起的缺陷或具有高生产率的柔性装置的柔性装置。 一种半导体器件，包括：柔性基板上的显示部分，包括晶体管和显示元件; 围绕显示部的半导体层; 以及在晶体管和半导体层上的绝缘层。 当在与柔性基板的表面垂直的方向上观察时，基板的端部与半导体层的端部大致对准，绝缘层的端部位于半导体层的上方。

    Fabrication method of semiconductor device and semiconductor device
    3.
    发明授权
    Fabrication method of semiconductor device and semiconductor device 有权

    公开(公告)号：US11133491B2

    公开(公告)日：2021-09-28

    申请号：US16493104

    申请日：2018-03-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

    IPC: H01L27/15 ,  H01L51/56 ,  H01L51/00 ,  H01L51/52

    Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
    A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

    Manufacturing method of semiconductor device
    4.
    发明授权
    Manufacturing method of semiconductor device 有权

    公开(公告)号：US10923350B2

    公开(公告)日：2021-02-16

    申请号：US15687915

    申请日：2017-08-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Seiji Yasumoto ,  Kayo Kumakura ,  Satoru Idojiri

    IPC: H01L21/02 ,  H01L21/67 ,  H01L21/78 ,  H01L27/12 ,  H01L29/66

    Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

    Semiconductor device comprising adhesive layer and resin layer
    6.
    发明授权
    Semiconductor device comprising adhesive layer and resin layer 有权

    公开(公告)号：US11856836B2

    公开(公告)日：2023-12-26

    申请号：US17479329

    申请日：2021-09-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

    IPC: H01L27/15 ,  H10K71/00 ,  H10K50/842 ,  H10K71/40 ,  H10K77/10

    CPC classification number: H10K71/00 ,  H10K50/8426 ,  H10K71/40 ,  H10K77/111

    Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
    A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

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