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公开(公告)号：US11869979B2
公开(公告)日：2024-01-09
申请号：US17727038
申请日：2022-04-22
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66742 , H10B12/05 , H10B12/31
摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.
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公开(公告)号：US11257959B2
公开(公告)日：2022-02-22
申请号：US16766425
申请日：2018-11-28
IPC分类号： H01L29/786
摘要： A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.-
公开(公告)号：US11133420B2
公开(公告)日：2021-09-28
申请号：US16954585
申请日：2018-12-19
发明人： Yuta Iida , Ryota Hodo , Kentaro Sugaya , Ryu Komatsu , Toshiya Endo , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L27/105 , H01L27/12 , H01L29/24 , H01L21/02 , H01L21/443 , H01L29/66
摘要： A semiconductor device with high on-state current is provided. The semiconductor device including a first oxide; a first conductor and a second conductor that are positioned over the first oxide; a third conductor positioned to cover the first conductor; a fourth conductor positioned to cover the second conductor; a first insulator having an opening overlapping with a region between the third conductor and the fourth conductor; a fifth conductor positioned in the opening; a second insulator positioned between the fifth conductor, and the first oxide and the first insulator; a second oxide positioned between the second insulator, and the first oxide and the first insulator; and a third insulator that is positioned between the second oxide, and the third conductor and the fourth conductor, and the first insulator and does not overlap with the first oxide in the region sandwiched between the third conductor and the fourth conductor, where the third conductor and the fourth conductor each have a region overlapping with the fifth conductor.
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公开(公告)号：US12100768B2
公开(公告)日：2024-09-24
申请号：US17606823
申请日：2020-05-12
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78651
摘要： A semiconductor device with small variations in transistor characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; an insulator in a region between the first conductor and the second conductor over the oxide; and a conductor over the insulator. A side surface of the oxide, a top surface of the first conductor, a side surface of the first conductor, a top surface of the second conductor, and a side surface of the second conductor include regions in contact with a nitride containing silicon.
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公开(公告)号：US11881513B2
公开(公告)日：2024-01-23
申请号：US17047724
申请日：2019-04-16
CPC分类号： H01L29/24 , H01L27/1225 , H10B12/312
摘要： A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.
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公开(公告)号：US11817507B2
公开(公告)日：2023-11-14
申请号：US17667655
申请日：2022-02-09
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.-
公开(公告)号：US11417773B2
公开(公告)日：2022-08-16
申请号：US17049042
申请日：2019-05-14
IPC分类号： H01L21/02 , H01L29/24 , H01L29/786 , H01L29/04 , H01L29/66
摘要： A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor. A region of the first region in contact with the second oxide includes a region in which an atomic ratio of aluminum (Al) to the element M is less than 0.1.
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公开(公告)号：US11316051B2
公开(公告)日：2022-04-26
申请号：US16963928
申请日：2019-02-21
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/108 , H01L29/24 , H01L29/66
摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.
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