公开(公告)号：US20140346505A1

公开(公告)日：2014-11-27

申请号：US14454113

申请日：2014-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

公开(公告)号：US20160358977A1

公开(公告)日：2016-12-08

申请号：US15174293

申请日：2016-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC: H01L27/24 ,  H01L23/66 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00

CPC classification number: H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

公开(公告)号：US20140014953A1

公开(公告)日：2014-01-16

申请号：US14013492

申请日：2013-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

IPC: H01L23/482

CPC classification number: H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

Abstract translation: 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

公开(公告)号：US20160005740A1

公开(公告)日：2016-01-07

申请号：US14844069

申请日：2015-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

IPC: H01L27/108

CPC classification number: H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

Abstract translation: 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

公开(公告)号：US20150144858A1

公开(公告)日：2015-05-28

申请号：US14614961

申请日：2015-02-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroko ABE ,  Yukie NEMOTO ,  Ryoji NOMURA ,  Mikio YUKAWA

IPC: H01L27/24 ,  H01L23/66 ,  H01L27/28 ,  H01L45/00 ,  H01L51/00

CPC classification number: H01L27/2463 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L21/8221 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1266 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/283 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/144 ,  H01L51/0098 ,  H01L2223/6677 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract translation: 本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。 本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作 天线。 存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。 用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

公开(公告)号：US20140364626A1

公开(公告)日：2014-12-11

申请号：US14466422

申请日：2014-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Harue Nakashima ,  Sachiko KAWAKAMI ,  Kumi KOJIMA ,  Ryoji NOMURA ,  Nobuharu OHSAWA

IPC: H01L51/00

CPC classification number: H01L51/0061 ,  C07D209/88 ,  C07D403/12 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1022 ,  C09K2211/1029 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5012 ,  H01L2251/308 ,  H05B33/14

Abstract: It is an object of the present invention to provide a light emitting element, which is resistant to repetition of an oxidation reaction. It is another object of the invention to provide a light emitting element, which is resistant to repetition of a reduction reaction. An anthracene derivative is represented by a general formula (1). In the general formula (1), R1 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, R2 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 12 carbon atoms, R3 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 12 carbon atoms, Ph1 represents a phenyl group, and X1 represents an arylene group having 6 to 15 carbon atoms.

Abstract translation: 本发明的目的是提供一种耐重复氧化反应的发光元件。 本发明的另一个目的是提供一种耐重复还原反应的发光元件。 蒽衍生物由通式（1）表示。 在通式（1）中，R 1表示氢或碳原子数1〜4的烷基，R 2表示氢，碳原子数1〜4的烷基，碳原子数6〜12的芳基，R 3 表示氢，碳原子数1〜4的烷基和碳原子数6〜12的芳基中的任一个，Ph 1表示苯基，X 1表示碳原子数6〜15的亚芳基。

公开(公告)号：US20140203266A1

公开(公告)日：2014-07-24

申请号：US14224485

申请日：2014-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryoji NOMURA ,  Satoshi SEO ,  Yuji IWAKI ,  Nozomu SUGISAWA

IPC: H01L27/32 ,  H01L51/50

CPC classification number: H01L27/326 ,  H01L51/5052 ,  H01L51/5092 ,  H01L51/5265

Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.

Abstract translation: 改善了发光元件的色纯度，而不会产生诸如降低电压和亮度效率的不利影响。 发光元件具有在一对电极之间具有发光层的发光层叠体。 提供缓冲层以与至少一个电极接触。 其中一个电极是具有高反射率的电极，另一个是透光电极。 通过使用透光性电极，可以发射和反射光。 根据缓冲层的厚度调整电极之间的光学距离，因此可以在电极之间共振光。 缓冲层由包含有机化合物和金属化合物的复合材料制成; 因此，即使电极之间的距离变长，发光元件的电压和亮度效率也不受影响。

公开(公告)号：US20130134408A1

公开(公告)日：2013-05-30

申请号：US13752589

申请日：2013-01-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Ryoji NOMURA

IPC: H01L51/52

CPC classification number: H01L51/52 ,  H01L51/5048 ,  Y10S428/917

Abstract: It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.

Abstract translation: 本发明的目的是提供一种具有低驱动电压的发光元件。 在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。 第一复合层和第二复合层各自包括金属氧化物和有机化合物。 第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。 此外，复合层不限于两层结构。 可以采用多层结构。 然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

公开(公告)号：US20170098776A1

公开(公告)日：2017-04-06

申请号：US15295437

申请日：2016-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Harue NAKASHIMA ,  Sachiko KAWAKAMI ,  Kumi KOJIMA ,  Ryoji NOMURA ,  Nobuharu OHSAWA

IPC: H01L51/00 ,  C09K11/06 ,  C07D209/88

CPC classification number: H01L51/0061 ,  C07D209/88 ,  C07D403/12 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1022 ,  C09K2211/1029 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5012 ,  H01L2251/308 ,  H05B33/14

Abstract: It is an object of the present invention to provide a light emitting element, which is resistant to repetition of an oxidation reaction. It is another object of the invention to provide a light emitting element, which is resistant to repetition of a reduction reaction. An anthracene derivative is represented by a general formula (1). In the general formula (1), R1 represents hydrogen or an alkyl group having 1 to 4 carbon atoms, R2 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 12 carbon atoms, R3 represents any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 12 carbon atoms, Ph1 represents a phenyl group, and X1 represents an arylene group having 6 to 15 carbon atoms.

公开(公告)号：US20140225097A1

公开(公告)日：2014-08-14

申请号：US14254479

申请日：2014-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakazu Egawa ,  Harue OSAKA ,  Sachiko KAWAKAMI ,  Nobuharu OHSAWA ,  Satoshi SEO ,  Ryoji NOMURA

IPC: H01L51/00 ,  C07D209/86 ,  C07C211/54 ,  C07D403/12

CPC classification number: C07C211/54 ,  C07D209/86 ,  C07D209/88 ,  C07D403/12 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5012 ,  H01L2251/308

Abstract: A novel stilbene derivative is provided with motivation of providing a blue emissive material showing excellent color purity. The use of the stilbene derivative of the present invention allows the fabrication of a blue-emissive light-emitting element with excellent color purity. The invention also includes an electronic device equipped with a display portion in which the stilbene derivative is employed. The stilbene derivative of the present invention is represented by formula (1), in which Ar1 and Ar2 may form a 5-membered ring by being directly bonded to each other. In formula (1), A11 represents any one of substituents represented by general formulas (1-1) to (1-3). The variables shown in formula (1) and (1-1) to (1-3) are as defined in the specification.

Abstract translation: 提供了一种新颖的1,2-二苯乙烯衍生物，具有提供显示出优异色纯度的蓝色发光材料的动机。 使用本发明的1,2-二苯乙烯衍生物可以制造具有优异色纯度的蓝色发光发光元件。 本发明还包括配备有使用二苯乙烯衍生物的显示部分的电子装置。 本发明的1,2-二苯乙烯衍生物由式（1）表示，其中Ar 1和Ar 2可以通过直接键合形成5元环。 式（1）中，A11表示由通式（1-1）〜（1-3）表示的取代基中的任意一个。 式（1）和（1-1）至（1-3）所示的变量如本说明书中所定义。