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公开(公告)号：US20080216956A1
公开(公告)日：2008-09-11
申请号：US11850722
申请日：2007-09-06
IPC分类号： C23F1/00
CPC分类号： G01B11/0625 , G01B11/0683 , H01J37/32935 , H01J37/32972 , H01J2237/334
摘要： To provide a plasma processing apparatus using a measuring method of a film thickness of a material to be processed, which method is capable of accurately measuring an actual residual film amount and an etching depth of the layer to be processed. The plasma processing apparatus includes: a detector 11 adapted to detect interference light of a plurality of wavelengths from the surface of a sample in a vacuum container; pattern comparing means 15 adapted to compare actual deviation pattern data relating to the interference light obtained at an arbitrary time point during the processing of the sample, with a plurality of standard deviation patterns which are data of interference light of a plurality of wavelengths relating to processing of another sample obtained before the processing of the sample, and which correspond to a plurality of thicknesses of the film, and adapted to calculate a deviation between the actual deviation pattern data and the standard deviation patterns; deviation comparing means 115 adapted to compare the deviation between the actual deviation pattern data and the standard deviation patterns, with a deviation set beforehand, and to output data relating to the film thickness of the sample at the time; residual film thickness time series data recording means 18 adapted to record the data relating to the film thickness as time series data; and an end point determining device 230 adapted to determine that etching of a predetermined amount is ended, by using the data of the film thickness.
摘要翻译： 为了提供使用待处理材料的膜厚测量方法的等离子体处理装置，该方法能够精确地测量待处理层的实际残留膜量和蚀刻深度。 等离子体处理装置包括：检测器11，其适于从真空容器中的样品的表面检测多个波长的干涉光; 模式比较装置15，其适于将与在样本处理期间的任意时间点获得的干涉光相关的实际偏差图案数据与作为与处理有关的多个波长的干涉光的数据的多个标准偏差图案进行比较 在样品处理之前获得并且对应于膜的多个厚度的另一个样品，并且适于计算实际偏差图案数据和标准偏差图案之间的偏差; 偏差比较装置115，用于比较实际偏差图案数据和标准偏差图案之间的偏差，预先设定的偏差，并输出与当时样品的膜厚有关的数据; 残膜厚度时间序列数据记录装置18，适于将与薄膜厚度相关的数据记录为时间序列数据; 以及适于通过使用膜厚度的数据来确定预定量的蚀刻结束的端点确定装置230。
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公开(公告)号：US20120101621A1
公开(公告)日：2012-04-26
申请号：US13338722
申请日：2011-12-28
申请人： Tatehito USUI , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito USUI , Kazuhiro Joo , Takashi Fujii
IPC分类号： G06F19/00
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.
摘要翻译： 等离子体处理装置包括：检测器，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较器，用于比较在处理期间获得的干涉光上的实际偏差图案数据与多个标准偏差图案 对应于膜的两个或更多个厚度，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，偏差比较器，用于比较 数据和预定的偏差，并输出当时的样品的胶片的厚度，作为时间序列数据记录的胶片的厚度数据和端点判定单元的数据。
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公开(公告)号：US20070202613A1
公开(公告)日：2007-08-30
申请号：US11371921
申请日：2006-03-10
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： H01L21/66
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.
摘要翻译： 使用测量加工材料的厚度的方法来提供等离子体处理装置，通过该方法可以在线正确地测量处理层的实际剩余厚度或蚀刻深度。 等离子体处理装置包括：检测器11，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较装置15，用于比较在处理期间获得的干涉光获得的实际偏差图案数据与多个标准 对应于膜的两个或更多个厚度的偏差图案，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，用于比较的偏差比较装置115 数据之间的偏差和预定的偏差，并输出当时的样品的胶片的厚度，用于记录的剩余厚度时间序列数据记录装置18作为时间序列数据的数据， 电影以及用于决定预定量的完成的端点决定单元230 通过使用关于膜的厚度的数据进行蚀刻。
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公开(公告)号：US08088247B2
公开(公告)日：2012-01-03
申请号：US11371921
申请日：2006-03-10
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.
摘要翻译： 使用测量加工材料的厚度的方法来提供等离子体处理装置，通过该方法可以在线正确地测量处理层的实际剩余厚度或蚀刻深度。 等离子体处理装置包括：检测器11，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较装置15，用于比较在处理期间获得的干涉光获得的实际偏差图案数据与多个标准 对应于膜的两个或更多个厚度的偏差图案，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，用于比较的偏差比较装置115 数据之间的偏差和预定的偏差，并输出当时的样品的胶片的厚度，用于记录的剩余厚度时间序列数据记录装置18作为时间序列数据的数据， 电影以及用于决定预定量的完成的端点决定单元230 通过使用关于膜的厚度的数据进行蚀刻。
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公开(公告)号：US08747608B2
公开(公告)日：2014-06-10
申请号：US13338722
申请日：2011-12-28
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.
摘要翻译： 等离子体处理装置包括：检测器，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较器，用于比较在处理期间获得的干涉光上的实际偏差图案数据与多个标准偏差图案 对应于膜的两个或更多个厚度，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，偏差比较器，用于比较 数据和预定的偏差，并输出当时的样品的胶片的厚度，作为时间序列数据记录的胶片的厚度数据和端点判定单元的数据。
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6.发明授权Emission spectroscopic processing apparatus and plasma processing method using it 失效发射光谱处理装置及其等离子体处理方法公开(公告)号：US07455790B2
公开(公告)日：2008-11-25
申请号：US11075803
申请日：2005-03-10
申请人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
发明人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
IPC分类号： H01L21/302
CPC分类号： H01J37/32972 , G01L21/30 , G01N21/73 , H01J37/32935
摘要： A plasma processing method using a spectroscopic processing unit which includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition step, and terminating the predetermined plasma process.
摘要翻译： 一种使用分光处理单元的等离子体处理方法，其包括将从真空处理室发射的光谱等离子体辐射分离成分量光谱，将分量光谱转换为以预定周期由不同波长分量组成的模拟电信号的时间序列，将模拟 不同波长分量的信号，在预定周期的基础上将多个相加的信号转换为数字量，在多信号的基础上将多个相加和转换的信号多次数字地相加多个，分别确定终点 基于由数字添加步骤产生的信号，并终止预定等离子体处理的预定等离子体处理。
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7.发明授权公开(公告)号：US07126697B2
公开(公告)日：2006-10-24
申请号：US11340559
申请日：2006-01-27
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
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公开(公告)号：US20060039008A1
公开(公告)日：2006-02-23
申请号：US11256967
申请日：2005-10-25
IPC分类号： G01B11/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
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公开(公告)号：US06716300B2
公开(公告)日：2004-04-06
申请号：US10090759
申请日：2002-03-06
申请人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
发明人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
IPC分类号： H05H100
CPC分类号： H01J37/32972 , G01L21/30 , G01N21/73 , H01J37/32935
摘要： An emission spectroscopic processing apparatus includes a spectroscope for spectrally separating input light emitted from a process unit into component spectra, a light receiving unit including a series of light receiving elements for detecting light quantities of the component spectra on a wavelength basis, a first signal hold unit for holding sequentially each of detection signals outputted from a subset of adjacent light receiving elements contained in series of light receiving elements during a first period, an adder unit for adding together the detection signals of adjacent light receiving elements of the light receiving unit inclusive of the held detection signals of the subset of adjacent light receiving elements, a second signal hold unit for holding sequentially sum outputs of the adder unit, and a signal processing unit for determining a state of the process unit on the basis of the output of the second signal hold unit.
摘要翻译： 发射光谱处理装置包括用于将从处理单元发射的输入光谱分解成分量光谱的分光镜，包括用于基于波长检测分量光谱的光量的一系列光接收元件的光接收单元，第一信号保持 单元，用于在第一时段期间顺序地保持从包含在一系列光接收元件中的相邻光接收元件的子集输出的每个检测信号;加法器单元，用于将光接收单元的相邻光接收元件的检测信号相加包括 相邻光接收元件的子集的保持的检测信号，用于保持加法器单元的顺序和输出的第二信号保持单元，以及用于基于第二信号的输出来确定处理单元的状态的信号处理单元 信号保持单元。
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10.发明授权Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US07411684B2
公开(公告)日：2008-08-12
申请号：US11759536
申请日：2007-06-07
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译： 一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案， 相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。
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