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公开(公告)号：US20230268175A1
公开(公告)日：2023-08-24
申请号：US17922506
申请日：2021-03-10
发明人： Tsuyoshi OHTSUKI , Tatsuo ABE
IPC分类号： H01L21/02 , H01L21/324
CPC分类号： H01L21/02164 , H01L21/02052 , H01L21/324 , H01L21/0228
摘要： The present invention is a method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates each having a chemical oxide film having a different constitution formed by cleaning, performing a thermal oxidization treatment under identical thermal oxidization treatment conditions to form a thermal oxide film, and determining a correlation between the constitution of the chemical oxide film and a thickness of the thermal oxide film in advance; a cleaning condition determination step of determining the constitution of the chemical oxide film based on the correlation obtained in the correlation acquisition step so that a thickness of a thermal oxide film to be formed on a semiconductor substrate is a predetermined thickness, and determining cleaning conditions for forming a chemical oxide film having the determined constitution of the chemical oxide film; a substrate cleaning step of cleaning the semiconductor substrate under the determined cleaning conditions; and a thermal oxide film formation step of performing a thermal oxidization treatment on the cleaned semiconductor substrate under conditions identical to the thermal oxidization treatment conditions in the correlation acquisition step to form a thermal oxide film on a surface of the semiconductor substrate. Consequently, a thermal oxide film is formed with the target film thickness with excellent reproducibility.
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公开(公告)号：US20230170208A1
公开(公告)日：2023-06-01
申请号：US17920227
申请日：2021-03-08
发明人： Tsuyoshi OHTSUKI , Tatsuo ABE
IPC分类号： H01L21/02
CPC分类号： H01L21/02236 , H01L21/02164 , H01L21/02301
摘要： A method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates; a substrate cleaning step of cleaning a semiconductor substrate; a thermal oxide film thickness estimation step of determining a constitution of a chemical oxide film formed on the semiconductor substrate by the cleaning in the substrate cleaning step and, based on the correlation, estimating a thickness of a thermal oxide film on a hypothesis that the semiconductor substrate has been subjected to a thermal oxidization treatment conditions in the correlation acquisition step; a thermal oxidization treatment condition determination step of determining thermal oxidization treatment conditions based on the thermal oxidization treatment conditions in the correlation acquisition step so that the thermal oxide film is a predetermined thickness; and a thermal oxide film formation step of forming a thermal oxide film on the semiconductor substrate.
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3.发明公开公开(公告)号：US20240120192A1
公开(公告)日：2024-04-11
申请号：US18278071
申请日：2022-02-21
发明人： Kota FUJII , Tatsuo ABE
IPC分类号： H01L21/02
CPC分类号： H01L21/02052 , H01L21/02024
摘要： A method of cleaning a silicon wafer in which the silicon wafer is roughened, including: forming an oxide film on the silicon wafer by SC1 cleaning, SC2 cleaning, or ozone water cleaning; cleaning the silicon wafer on which the oxide film is formed by using any one of: a diluted aqueous solution of ammonium hydroxide having an ammonium hydroxide concentration of 0.051% by mass or less; or a diluted aqueous solution containing ammonium hydroxide and hydrogen peroxide water and having an ammonium hydroxide concentration of 0.051% by mass or less and a hydrogen peroxide concentration of 0.2% by mass or less, the hydrogen peroxide concentration being four times or less the ammonium hydroxide concentration, to roughen front and rear faces of the silicon wafer.
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公开(公告)号：US20200027721A1
公开(公告)日：2020-01-23
申请号：US16491294
申请日：2018-03-05
发明人： Kensaku IGARASHI , Tatsuo ABE
摘要： A method for cleaning a semiconductor wafer, including: inserting a semiconductor wafer into a hydrofluoric acid tank filled with hydrofluoric acid to immerse the semiconductor wafer in the hydrofluoric acid; pulling out the semiconductor wafer from the hydrofluoric acid tank; and then inserting the semiconductor wafer into an ozone water tank filled with ozone water to immerse the semiconductor wafer in the ozone water for cleaning. The semiconductor wafer is inserted into the ozone water tank at a rate of 20000 mm/min or more at least after a lower end of the semiconductor wafer comes into contact with the ozone water until the semiconductor wafer is completely immersed in the ozone water. A method for cleaning a semiconductor wafer which can prevent and remove contaminant from re-adhering in a method in which a semiconductor wafer is cleaned by immersion in hydrofluoric acid and then cleaned by immersion in ozone water.
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5.发明公开公开(公告)号：US20240274477A1
公开(公告)日：2024-08-15
申请号：US18566907
申请日：2022-06-06
发明人： Tsuyoshi OHTSUKI , Tatsuo ABE
CPC分类号： H01L22/20 , H01L21/0206 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/67028
摘要： The present invention provides a method for forming a thermal oxide film, comprising the steps of: a step of acquiring a first correlation between an amount of OH groups and thickness of the thermal oxide film by forming a thermal oxide film by thermal oxidation treatment under the same condition after preparing a plurality of semiconductor substrates having chemical oxide films formed by cleaning and having different amounts of OH groups; a step of acquiring a second correlation between an amount of OH groups and drying conditions by cleaning under the same cleaning condition followed by changed drying conditions to substrates and measuring amounts of OH groups; a step of acquiring a third correlation between drying condition and thickness of thermal oxide film by using the first correlation and the second correlation; a step of determining drying condition and thermal oxidation condition by using the third correlation; a step of cleaning the substrates; and a step of drying and a thermal oxide film formation after the cleaning step using the drying conditions and thermal oxidation treatment conditions determined in the drying and thermal oxidation treatment condition determination step. This provides a method for forming thermal oxide film in which a thermal oxide film can be formed with intended thickness with good reproducibility while without changing the composition of the cleaning chemical solution.
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公开(公告)号：US20240203745A1
公开(公告)日：2024-06-20
申请号：US18286691
申请日：2022-03-16
发明人： Tatsuo ABE , Yuki TANAKA
IPC分类号： H01L21/304 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/304 , H01L21/02019 , H01L21/02024 , H01L21/3065
摘要： The present invention is a silicon wafer manufacturing method including a grinding step of grinding front and back surfaces of a raw wafer to obtain a wafer having an arithmetic surface roughness Sa per 2 μm2 of 10 nm or less; a dry-etching step of subjecting the wafer obtained in the grinding step to isotropic whole-surface dry-etching with an etching removal of 1 μm or less per surface to remove a mechanically damaged layer introduced into each of front and back surfaces of the wafer in the grinding step; and a double-side polishing step of, after the dry-etching step, polishing both surfaces of the wafer with a stock removal of 3 μm or less per surface. Thus, the silicon wafer manufacturing method that enables to manufacture a wafer having high flatness can be provided.
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公开(公告)号：US20160067749A1
公开(公告)日：2016-03-10
申请号：US14783356
申请日：2014-04-09
发明人： Hitoshi KABASAWA , Tatsuo ABE
CPC分类号： B08B3/12 , H01L21/02052 , H01L21/67057
摘要： The present invention is directed to a method for cleaning that performs ultrasonic cleaning of an object to be cleaned by using a cleaning tank having a bottom face with an inclination, the method for cleaning in which the object to be cleaned is cleaned by using a plurality of the cleaning tanks and making the cleaning tanks lying next to each other have bottom faces with inclinations in different directions. As a result, in cleaning of a wafer by ultrasonic cleaning, it is possible to eliminate cleaning nonuniformity of the wafer.
摘要翻译： 本发明涉及一种清洁方法，其通过使用具有倾斜底面的清洗槽对待清洁物进行超声波清洗，其中通过使用多个清洁器清洁待清洁物体的清洁方法 的清洁槽并使彼此相邻的清洁罐具有不同方向的倾斜的底面。 结果，在通过超声波清洗来清洗晶片时，可以消除晶片的清洁不均匀性。
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8.发明公开公开(公告)号：US20230207399A1
公开(公告)日：2023-06-29
申请号：US17920937
申请日：2021-03-03
发明人： Tsuyoshi OHTSUKI , Tatsuo ABE
IPC分类号： H01L21/66 , H01L21/311 , G01N21/3563 , G01N23/20
CPC分类号： H01L22/12 , H01L21/31116 , G01N21/3563 , G01N23/20 , G01N2021/3595
摘要： A method for dry-etching a semiconductor substrate having an oxide film, including: evaluating a film quality of the oxide film and determining a time for performing the dry-etching on a basis of results of the evaluation in advance. This provides a method for controlling the etching amount of an oxide film accurately and suppressing over-etching and insufficient etching without influence from variation in the film quality of the oxide film when dry-etching the oxide film on the surface of the semiconductor substrate.
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公开(公告)号：US20230137813A1
公开(公告)日：2023-05-04
申请号：US17917781
申请日：2021-02-08
发明人： Masaaki OSEKI , Tatsuo ABE , Michito SATO
IPC分类号： B24B37/04 , B24B37/005 , H01L21/306
摘要： A method for polishing a wafer in order to correct a shape of a polished wafer subjected to polishing, by pressing the wafer to a polishing pad while continuously supplying a composition for polishing containing water to perform correction-polishing, the method including the steps of: measuring the shape of the polished wafer before performing the correction-polishing; determining, in accordance with the measured shape of the polished wafer, a kind and concentration of a surfactant to be contained in the composition for polishing; and performing the correction-polishing while supplying the composition for polishing adjusted on a basis of the determined kind and concentration of the surfactant. This provides a method and apparatus for polishing a wafer that make it possible to reduce, in the latter polishing step, a variation in the shape of the wafer that occurred in a preceding polishing step.
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公开(公告)号：US20210013031A1
公开(公告)日：2021-01-14
申请号：US16969586
申请日：2019-02-26
发明人： Kensaku IGARASHI , Tatsuo ABE
IPC分类号： H01L21/02 , B08B3/04 , H01L21/683
摘要： A wafer treatment apparatus with a rotatable table inside a chamber and a plurality of holding pins arranged on the table, where a periphery of a wafer is held by the plurality of holding pins and the wafer is subjected to a cleaning and/or drying treatment while being rotated, where one or more of the plurality of holding pins are drivable, and press and hold the wafer so that a resultant force working on the held wafer works in a direction that bends the wafer upwards in a convex shape. A wafer treatment apparatus and a method for treating a wafer that can prevent particles from aggregating in a wafer rotation center and prevent dry marks, etc. from occurring.
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