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Patent Agency Ranking
1.发明授权公开(公告)号：US09214585B2
公开(公告)日：2015-12-15
申请号：US14265331
申请日：2014-04-29
Applicant: Solexel, Inc.
Inventor： Virendra V. Rana , Mehrdad M. Moslehi , Pawan Kapur , Benjamin Rattle , Heather Deshazer , Solene Coutant
IPC: H01L31/18 , H01L31/0445 , H01L31/049 , H01L33/00 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/068 , H01L31/056
CPC classification number: H01L31/0682 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/035281 , H01L31/0445 , H01L31/049 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1868 , H01L31/1896 , H01L33/0095 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。
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公开(公告)号：US09583651B2
公开(公告)日：2017-02-28
申请号：US13727393
申请日：2012-12-26
Applicant: SOLEXEL, INC.
Inventor： Mehrdad M. Moslehi , Virendra V. Rana , Solene Coutant , Heather Deshazer , Pranav Anbalagan , Benjamin Rattle
IPC: H01L21/00 , H01L31/02 , H01L31/0236 , H01L31/068 , H01L31/18
CPC classification number: H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.
Abstract translation: 提供了提高晶体硅太阳能电池的光捕获特性的方法。 在一个实施例中，晶体硅太阳能电池基板的背面用脉冲激光束纹理化。 然后对结晶硅太阳能电池基板的带纹理的背面进行退火，以消除激光纹理化过程中的损伤。
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公开(公告)号：US20160336473A1
公开(公告)日：2016-11-17
申请号：US14968855
申请日：2015-12-14
Applicant: Solexel, Inc.
Inventor： Virendra V. Rana , Mehrdad M. Moslehi , Pawan Kapur , Benjamin Rattle , Heather Deshazer , Solene Coutant , Swaroop Kommera
IPC: H01L31/068 , H01L31/18 , H01L31/0236 , H01L31/0224 , H01L31/0216
CPC classification number: H01L31/0682 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/056 , H01L31/068 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1868 , H01L31/1896 , H01L33/0095 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
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4.发明申请公开(公告)号：US20150056742A1
公开(公告)日：2015-02-26
申请号：US14265331
申请日：2014-04-29
Applicant: Solexel, Inc.
Inventor： Virendra V. Rana , Mehrdad M. Moslehi , Pawan Kapur , Benjamin Rattle , Heather Deshazer , Solene Coutant
IPC: H01L31/18 , H01L31/0236
CPC classification number: H01L31/0682 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/035281 , H01L31/0445 , H01L31/049 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1868 , H01L31/1896 , H01L33/0095 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。
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公开(公告)号：US20140017846A1
公开(公告)日：2014-01-16
申请号：US13727393
申请日：2012-12-26
Applicant: SOLEXEL, INC.
Inventor： Mehrdad M. Moslehi , Virendra V. Rana , Solene Coutant , Heather Deshazer , Pranav Anbalagan , Benjamin Rattle
IPC: H01L31/0236
CPC classification number: H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.
Abstract translation: 提供了提高晶体硅太阳能电池的光捕获特性的方法。 在一个实施例中，晶体硅太阳能电池基板的背面用脉冲激光束纹理化。 然后对结晶硅太阳能电池基板的带纹理的背面进行退火，以消除激光纹理化过程中的损伤。
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