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    ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS
    2.
    发明申请
    ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS 审中-公开
    薄硅太阳能电池的主动背板

    公开(公告)号：US20160013335A1

    公开(公告)日：2016-01-14

    申请号：US14615335

    申请日：2015-02-05

    Applicant: SOLEXEL, INC.

    Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Pawan Kapur ,  Thom Stalcup ,  David Xuan-Qi Wang ,  George D. Kamian ,  Kamran Manteghi ,  Yen-Sheng Su ,  Pranav Anbalagan ,  Virendra V. Rana ,  Anthony Calcaterra ,  Gerry Olsen ,  Wojciech Worwag

    IPC: H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/1804 ,  Y02E10/50

    Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.

    Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，将预浸料底板附着到基底电极和发射电极的交错图案上，在预浸料底板上形成孔，其提供对第一层 的导电金属，并且在预浸料背板的背面上沉积第二导电金属层，通过预浸料背板中的孔与第一导电金属层形成电互连。

    PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION
    7.
    发明申请
    PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION 审中-公开
    使用激光雷射消除氧化硅层的图案

    公开(公告)号：US20170005206A1

    公开(公告)日：2017-01-05

    申请号：US14991789

    申请日：2016-01-08

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

    IPC: H01L31/0216 ,  H01L21/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/068 ,  H01L21/311 ,  H01L31/0236

    CPC classification number: H01L31/02167 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/31105 ,  H01L21/31144 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0682 ,  H01L31/1896 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    THIN FILM SOLAR CELL LAMINATION STACK FOR HIGH VOLUME MANUFACTURING
    8.
    发明申请
    THIN FILM SOLAR CELL LAMINATION STACK FOR HIGH VOLUME MANUFACTURING 审中-公开
    薄膜太阳能电池层压板用于高容量制造

    公开(公告)号：US20150129017A1

    公开(公告)日：2015-05-14

    申请号：US14326461

    申请日：2014-07-08

    Applicant: Solexel, Inc.

    Inventor： David Dutton ,  Pranav Anbalagan ,  Karl-Josef Kramer ,  Mehrdad M. Moslehi

    IPC: H01L31/049 ,  H01L31/0216 ,  H01L31/0445

    CPC classification number: H01L31/049 ,  H01L31/0445 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A lamination stack for etching solar cells is provided. At least two solar cell wafers are attached to corresponding backplane sheets which are larger than the solar cell wafers. Release layers larger than the solar cells and smaller than the backplane sheets are positioned on the backplane sheets on the opposite side of the attached solar cell wafers. The backplane sheets are bonded together along the exposed peripheral boundary formed by the release layers.

    Abstract translation: 提供了一种用于蚀刻太阳能电池的叠片。 至少两个太阳能电池晶片连接到大于太阳能电池晶片的对应背板上。 大于太阳能电池并且小于背板的释放层位于附着的太阳能电池晶片的相对侧上的背板上。 背板被沿着由剥离层形成的暴露的外围边界粘合在一起。

    LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION
    9.
    发明申请
    LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION 有权
    高效晶体硅太阳能电池制造的激光加工

    公开(公告)号：US20130217172A1

    公开(公告)日：2013-08-22

    申请号：US13846230

    申请日：2013-03-18

    Applicant: Solexel, Inc.

    Inventor： Virendra V. Rana ,  JianJun Liang ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

    IPC: H01L31/18

    CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

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