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    Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode
    1.
    发明授权
    Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode 有权

    公开(公告)号：US10297979B1

    公开(公告)日：2019-05-21

    申请号：US15961759

    申请日：2018-04-24

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

    IPC: H01S5/343 ,  H01S5/20 ,  H01S5/042 ,  H01S5/30 ,  H01S5/22

    Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

    Gallium nitride containing laser device configured on a patterned substrate
    3.
    发明授权
    Gallium nitride containing laser device configured on a patterned substrate 有权

    公开(公告)号：US10186841B1

    公开(公告)日：2019-01-22

    申请号：US15887217

    申请日：2018-02-02

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

    IPC: H01S5/02 ,  H01S5/343 ,  H01S5/30 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32

    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

    Gallium nitride containing laser device configured on a patterned substrate
    7.
    发明授权
    Gallium nitride containing laser device configured on a patterned substrate 有权
    配置在图案化基板上的含氮化镓激光器件

    公开(公告)号：US09166372B1

    公开(公告)日：2015-10-20

    申请号：US14317846

    申请日：2014-06-27

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

    IPC: H01S5/02 ,  H01S5/22 ,  H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/32

    CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

    Abstract translation: 含镓和氮的激光二极管器件。 该器件具有包含表面区域的含镓和氮的衬底材料。 表面区域配置在非极性晶体取向或半极性晶体取向上。 该器件具有形成在衬底材料的第二区域内的凹陷区域，第二区域位于第一区域和第三区域之间。 凹陷区域被配置为阻挡多个缺陷从第一区域迁移到第三区域。 该器件具有形成在第三区域上的外延形成的含镓和氮的区域。 外延形成的含镓和氮的区域基本上没有从第一区域迁移的缺陷和形成在第三区域上的有源区域。

    Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode
    8.
    发明授权
    Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode 有权

    公开(公告)号：US10439365B1

    公开(公告)日：2019-10-08

    申请号：US16380163

    申请日：2019-04-10

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

    IPC: H01S5/343 ,  H01S5/22 ,  H01S5/20 ,  H01S5/042 ,  H01S5/30

    Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

    Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
    9.
    发明授权
    Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode 有权
    使用氮气对含镓和氮的激光二极管进行p型包层的外延生长

    公开(公告)号：US09564736B1

    公开(公告)日：2017-02-07

    申请号：US14315687

    申请日：2014-06-26

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

    IPC: H01S5/20 ,  H01S5/22 ,  H01S5/32

    CPC classification number: H01S5/34333 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/222 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/34346 ,  H01S2304/02 ,  H01S2304/04

    Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

    Abstract translation: 在一个实例中，本发明提供一种制造被配置为III族氮化物的激光器件的发光器件的方法。 该方法还包括形成覆盖衬底构件的表面区域的含镓外延材料。 该方法包括在预定工艺条件下形成覆盖含镓外延材料的p型（Al，In，Ga）N波导材料。 该方法包括维持预定的工艺条件，使得围绕p型（Al，In，Ga）N波导材料的生长的环境基本上是分子N2富含气体环境。 该方法包括在形成p型（Al，In，Ga）N波导材料期间保持725℃至925℃的温度，尽管可能存在变化。 在一个实例中，预定的工艺条件基本上不含分子H2气体。

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