公开(公告)号：US20090061743A1

公开(公告)日：2009-03-05

申请号：US12195922

申请日：2008-08-21

申请人： STEPHEN JEW ,  Jimin Zhang ,  Kuo-Lih Chang ,  Shih-Haur Shen ,  Wen-Chiang Tu

发明人： STEPHEN JEW ,  Jimin Zhang ,  Kuo-Lih Chang ,  Shih-Haur Shen ,  Wen-Chiang Tu

IPC分类号： B24B29/00

CPC分类号： B24B37/042 ,  B24B53/003 ,  B24B53/017

摘要： A method and apparatus for pre-conditioning a new soft polishing pad and processing a substrate on a soft polishing pad is described. The method includes coupling a soft polishing pad to a platen, contacting the processing surface of the soft polishing pad with a conditioning disk, applying a pressure conditioning disk, removing the conditioning disk from contact with the processing surface of the soft polishing pad, and contacting a first substrate with the processing surface of the soft polishing pad to perform a polishing process on the first substrate.

摘要翻译： 描述了用于预处理新的软抛光垫并在软抛光垫上处理基板的方法和装置。 该方法包括将软抛光垫连接到压板上，将软抛光垫的处理表面与调节盘接触，施加压力调节盘，去除调节盘以与软抛光垫的处理表面接触，以及接触 第一基板，其具有软抛光垫的处理表面，以在第一基板上执行抛光处理。

公开(公告)号：US20140030956A1

公开(公告)日：2014-01-30

申请号：US13558140

申请日：2012-07-25

申请人： Jimin Zhang ,  Jose Salas-Vernis ,  Ingemar Carlsson ,  David H. Mai ,  Huyen Tran ,  Zhihong Wang ,  Wen-Chiang Tu ,  Stephen Jew ,  Boguslaw A. Swedek ,  Shih-Haur Shen ,  James C. Wang ,  Yen-Chu Yang

发明人： Jimin Zhang ,  Jose Salas-Vernis ,  Ingemar Carlsson ,  David H. Mai ,  Huyen Tran ,  Zhihong Wang ,  Wen-Chiang Tu ,  Stephen Jew ,  Boguslaw A. Swedek ,  Shih-Haur Shen ,  James C. Wang ,  Yen-Chu Yang

IPC分类号： B24B51/00

CPC分类号： B24B51/00 ,  B24B37/013

摘要： A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.

摘要翻译： 抛光方法包括将两个基板定位成与相同的抛光垫接触。 在开始抛光之前，当两个基板与抛光垫接触时，从原位监测系统产生两个起始值。 可以调整施加到一个基板的起始抛光时间或压力，使得两个基板具有更接近的端点条件。 在抛光期间，用原位监测系统监测两个基底以产生两个值序列，并且可以检测抛光终点，或者可以基于两个值序列来调整抛光参数。

公开(公告)号：US20120053717A1

公开(公告)日：2012-03-01

申请号：US12871714

申请日：2010-08-30

申请人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

发明人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

IPC分类号： G06F17/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

摘要翻译： 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

公开(公告)号：US08694144B2

公开(公告)日：2014-04-08

申请号：US12871714

申请日：2010-08-30

申请人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

发明人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

IPC分类号： G06F19/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

摘要翻译： 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

公开(公告)号：US09005999B2

公开(公告)日：2015-04-14

申请号：US13539344

申请日：2012-06-30

申请人： Kun Xu ,  Jimin Zhang ,  David H. Mai ,  Stephen Jew ,  Shih-Haur Walters Shen ,  Zhihong Wang ,  Thomas H. Osterheld ,  Wen-Chiang Tu ,  Gary Ka Ho Lam ,  Tomohiko Kitajima

发明人： Kun Xu ,  Jimin Zhang ,  David H. Mai ,  Stephen Jew ,  Shih-Haur Walters Shen ,  Zhihong Wang ,  Thomas H. Osterheld ,  Wen-Chiang Tu ,  Gary Ka Ho Lam ,  Tomohiko Kitajima

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/302 ,  B24B37/015 ,  H01L21/304

摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

摘要翻译： 提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。 一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程 响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

公开(公告)号：US20140004626A1

公开(公告)日：2014-01-02

申请号：US13539344

申请日：2012-06-30

申请人： KUN XU ,  Jimin Zhang ,  David H. Mai ,  Stephen Jew ,  Shih-Haur Walters Shen ,  Zhihong Wang ,  Thomas H. Osterheld ,  Wen-Chiang Tu ,  Gary Ka Ho Lam ,  Tomohiko Kitajima

发明人： KUN XU ,  Jimin Zhang ,  David H. Mai ,  Stephen Jew ,  Shih-Haur Walters Shen ,  Zhihong Wang ,  Thomas H. Osterheld ,  Wen-Chiang Tu ,  Gary Ka Ho Lam ,  Tomohiko Kitajima

IPC分类号： H01L21/66

CPC分类号： H01L21/302 ,  B24B37/015 ,  H01L21/304

摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

摘要翻译： 提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。 一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程 响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

公开(公告)号：US20120276817A1

公开(公告)日：2012-11-01

申请号：US13095822

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu ,  David Maxwell Gage ,  James C. Wang

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu ,  David Maxwell Gage ,  James C. Wang

IPC分类号： B24B1/00

CPC分类号： B24B37/00 ,  B24B49/105

摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.

摘要翻译： 对基板进行化学机械抛光的方法包括：在抛光台处对基板上的金属层进行抛光，用涡流监视系统在抛光台上研磨抛光期间监测金属层的厚度，并且当涡流监视系统指示时停止抛光 金属层的残留物从下层移除，底层的顶表面被暴露。

公开(公告)号：US20120276661A1

公开(公告)日：2012-11-01

申请号：US13095818

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

IPC分类号： H01L21/66 ,  B24B51/00

CPC分类号： H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

摘要翻译： 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

公开(公告)号：US09023667B2

公开(公告)日：2015-05-05

申请号：US13095818

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

IPC分类号： H01L21/66 ,  B24B51/00 ,  B24B49/10

CPC分类号： H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

摘要翻译： 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

公开(公告)号：US20130224890A1

公开(公告)日：2013-08-29

申请号：US13774843

申请日：2013-02-22

申请人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

摘要： A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

摘要翻译： 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。