利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.026 秒)

    METHOD OF SOFT PAD PREPARATION TO REDUCE REMOVAL RATE RAMP-UP EFFECT AND TO STABILIZE DEFECT RATE
    1.
    发明申请
    METHOD OF SOFT PAD PREPARATION TO REDUCE REMOVAL RATE RAMP-UP EFFECT AND TO STABILIZE DEFECT RATE 审中-公开
    软垫片制备方法减少去除速率的变化效应和稳定缺陷率

    公开(公告)号：US20090061743A1

    公开(公告)日：2009-03-05

    申请号：US12195922

    申请日：2008-08-21

    申请人： STEPHEN JEW ,  Jimin Zhang ,  Kuo-Lih Chang ,  Shih-Haur Shen ,  Wen-Chiang Tu

    发明人： STEPHEN JEW ,  Jimin Zhang ,  Kuo-Lih Chang ,  Shih-Haur Shen ,  Wen-Chiang Tu

    IPC分类号： B24B29/00

    CPC分类号： B24B37/042 ,  B24B53/003 ,  B24B53/017

    摘要： A method and apparatus for pre-conditioning a new soft polishing pad and processing a substrate on a soft polishing pad is described. The method includes coupling a soft polishing pad to a platen, contacting the processing surface of the soft polishing pad with a conditioning disk, applying a pressure conditioning disk, removing the conditioning disk from contact with the processing surface of the soft polishing pad, and contacting a first substrate with the processing surface of the soft polishing pad to perform a polishing process on the first substrate.

    摘要翻译： 描述了用于预处理新的软抛光垫并在软抛光垫上处理基板的方法和装置。 该方法包括将软抛光垫连接到压板上，将软抛光垫的处理表面与调节盘接触，施加压力调节盘，去除调节盘以与软抛光垫的处理表面接触，以及接触 第一基板，其具有软抛光垫的处理表面，以在第一基板上执行抛光处理。

    HIGH SENSITIVITY EDDY CURRENT MONITORING SYSTEM
    6.
    发明申请
    HIGH SENSITIVITY EDDY CURRENT MONITORING SYSTEM 有权
    高灵敏度EDDY电流监测系统

    公开(公告)号：US20120276661A1

    公开(公告)日：2012-11-01

    申请号：US13095818

    申请日：2011-04-27

    申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

    发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

    IPC分类号： H01L21/66 ,  B24B51/00

    CPC分类号： H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

    摘要翻译： 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

    High sensitivity eddy current monitoring system
    7.
    发明授权
    High sensitivity eddy current monitoring system 有权
    高灵敏度涡流监测系统

    公开(公告)号：US09023667B2

    公开(公告)日：2015-05-05

    申请号：US13095818

    申请日：2011-04-27

    申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

    发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

    IPC分类号： H01L21/66 ,  B24B51/00 ,  B24B49/10

    CPC分类号： H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

    摘要翻译： 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

    Feedback Control Using Detection Of Clearance And Adjustment For Uniform Topography
    8.
    发明申请
    Feedback Control Using Detection Of Clearance And Adjustment For Uniform Topography 有权
    反馈控制使用检测的均匀地形的清除和调整

    公开(公告)号：US20130224890A1

    公开(公告)日：2013-08-29

    申请号：US13774843

    申请日：2013-02-22

    申请人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

    发明人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

    IPC分类号： H01L21/66

    CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

    摘要： A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

    摘要翻译： 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。