公开(公告)号：US10796942B2

公开(公告)日：2020-10-06

申请号：US16105403

申请日：2018-08-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Davide Giuseppe Patti ,  Marco Morelli ,  Giuseppe Barillaro

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US10825954B2

公开(公告)日：2020-11-03

申请号：US15983959

申请日：2018-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/14 ,  H01L33/34 ,  H01L33/00

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US20180269357A1

公开(公告)日：2018-09-20

申请号：US15983959

申请日：2018-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/34 ,  H01L33/14 ,  H01L33/00

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US10221066B2

公开(公告)日：2019-03-05

申请号：US15220267

申请日：2016-07-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

IPC: B81C1/00 ,  H01L27/10

Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

公开(公告)号：US10535767B2

公开(公告)日：2020-01-14

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/32 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20180061982A1

公开(公告)日：2018-03-01

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/36 ,  H01L29/66 ,  H01L21/3063 ,  H01L21/265 ,  H01L21/308 ,  H01L21/02 ,  H01L29/08 ,  H01L21/762 ,  H03K17/687

CPC classification number: H01L29/7827 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66128 ,  H01L29/66666 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/8611 ,  H03K17/687

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US11469136B2

公开(公告)日：2022-10-11

申请号：US17001295

申请日：2020-08-24

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Davide Giuseppe Patti ,  Marco Morelli ,  Giuseppe Barillaro

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06 ,  H01L29/78

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US10236378B2

公开(公告)日：2019-03-19

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66 ,  H03K17/687 ,  H01L29/32 ,  H01L29/861 ,  H01L29/16

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US10002990B2

公开(公告)日：2018-06-19

申请号：US15087183

申请日：2016-03-31

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/34 ,  H01L33/00 ,  H01L33/14

CPC classification number: H01L33/346 ,  H01L33/0054 ,  H01L33/145

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US20170312782A1

公开(公告)日：2017-11-02

申请号：US15463858

申请日：2017-03-20

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabio Quaglia ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Giuseppe Barillaro

IPC: B06B1/02 ,  B06B1/06

CPC classification number: B06B1/0292 ,  A61B8/4483 ,  B06B1/0644 ,  B06B1/067 ,  B06B1/0685 ,  G10K9/22 ,  G10K11/02 ,  H04R19/005

Abstract: An acoustic device includes a micro-machined acoustic transducer element, an acoustically attenuating region, and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane. A second substrate of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic matching region has a first interface with the second substrate and a second interface with the acoustically attenuating region. The acoustic matching region has an impedance matched to the impedance of the second substrate in proximity of the first interface, and an impedance matched to the acoustically attenuating region in proximity of the second interface.