公开(公告)号：US09385049B2

公开(公告)日：2016-07-05

申请号：US14607438

申请日：2015-01-28

Applicant: STMicroelectronics S.r.L.

Inventor： Riccardo Depetro ,  Stefano Manzini

IPC: H01L21/31 ,  H01L21/8238 ,  H01L29/417 ,  H01L21/762 ,  H01L21/265 ,  H01L21/311 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823878 ,  H01L21/265 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823857 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7816

Abstract: An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, coupled to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body.

Abstract translation: 集成装置包括：具有从第一部分突出的第一凹陷部分和第二部分的半导体本体; STI结构，其延伸在半导体主体的第一部分上，其横向限定第二部分并且具有与第一部分的表面相邻的面; 低电压CMOS部件，容纳在第二部分中，位于半导体本体的第一区域中; 以及功率分量，在所述半导体本体的第二区域中。 功率部件具有形成在半导体本体的第一部分中的至少一个导电区域和与导电区域耦合并且在垂直于半导体主体的第一部分的表面的方向上横穿STI结构的导电触点 。

公开(公告)号：US10535767B2

公开(公告)日：2020-01-14

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/32 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20180061982A1

公开(公告)日：2018-03-01

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/36 ,  H01L29/66 ,  H01L21/3063 ,  H01L21/265 ,  H01L21/308 ,  H01L21/02 ,  H01L29/08 ,  H01L21/762 ,  H03K17/687

CPC classification number: H01L29/7827 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66128 ,  H01L29/66666 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/8611 ,  H03K17/687

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20150140750A1

公开(公告)日：2015-05-21

申请号：US14607438

申请日：2015-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： Riccardo Depetro ,  Stefano Manzini

IPC: H01L21/8238 ,  H01L21/311 ,  H01L21/762 ,  H01L21/265

CPC classification number: H01L21/823878 ,  H01L21/265 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/82385 ,  H01L21/823857 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7816

Abstract: An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, coupled to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body.

Abstract translation: 集成装置包括：具有从第一部分突出的第一凹陷部分和第二部分的半导体本体; STI结构，其延伸在半导体主体的第一部分上，其横向限定第二部分并且具有与第一部分的表面相邻的面; 低电压CMOS部件，容纳在第二部分中，位于半导体本体的第一区域中; 以及功率分量，在所述半导体本体的第二区域中。 功率部件具有形成在半导体本体的第一部分中的至少一个导电区域和与导电区域耦合并且在垂直于半导体主体的第一部分的表面的方向上横穿STI结构的导电触点 。

公开(公告)号：US10236378B2

公开(公告)日：2019-03-19

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66 ,  H03K17/687 ,  H01L29/32 ,  H01L29/861 ,  H01L29/16

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.