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公开(公告)号：US11274036B2
公开(公告)日：2022-03-15
申请号：US16815883
申请日：2020-03-11
摘要： A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
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2.发明授权公开(公告)号：US10329141B2
公开(公告)日：2019-06-25
申请号：US15083034
申请日：2016-03-28
IPC分类号： H01L23/13 , B81B7/00 , B81C1/00 , H01L23/055 , H01L23/16
摘要： An encapsulated device of semiconductor material wherein a chip of semiconductor material is fixed to a base element of a packaging body through at least one pillar element having elasticity and deformability greater than the chip, for example a Young's modulus lower than 300 MPa. In one example, four pillar elements are fixed in proximity of the corners of a fixing surface of the chip and operate as uncoupling structure, which prevents transfer of stresses and deformations of the base element to the chip.
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3.发明授权公开(公告)号：US10227233B2
公开(公告)日：2019-03-12
申请号：US15379091
申请日：2016-12-14
摘要： A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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公开(公告)号：US08988155B2
公开(公告)日：2015-03-24
申请号：US13689430
申请日：2012-11-29
IPC分类号： H03B5/32 , H01L41/053 , H01L41/083 , H01L41/23 , H03B1/00 , H01L29/66 , H01L41/29 , H03H3/02 , H03H9/05 , H03H9/10 , H01L41/09 , H03H9/17 , H03H3/007
CPC分类号： H03B1/00 , H01L29/66007 , H01L41/053 , H01L41/083 , H01L41/094 , H01L41/23 , H01L41/29 , H03B5/32 , H03H3/007 , H03H3/02 , H03H9/0538 , H03H9/10 , H03H9/1007 , H03H9/1057 , H03H9/172
摘要： An oscillator device includes: a structural layer extending over a first side of a semiconductor substrate; a semiconductor cap set on the structural layer; a coupling region extending between and hermetically sealing the structural layer and the cap and forming a cavity within the oscillator device; first and second conductive paths extending between the substrate and the structural layer; first and second conductive pads housed in the cavity and electrically coupled to first terminal portions of the first and second conductive paths by first and second connection regions, respectively, which extend through and are insulated from the structural layer; a piezoelectric resonator having first and second ends electrically coupled, respectively, to the first and second conductive pads, and extending in the cavity; and third and fourth conductive pads positioned outside the cavity and electrically coupled to second terminal portions of the first and second conductive paths.
摘要翻译： 振荡器装置包括：在半导体衬底的第一侧上延伸的结构层; 设置在结构层上的半导体盖; 耦合区域，其在所述结构层和所述盖之间延伸并且密封所述结构层和所述盖并在所述振荡器装置内形成空腔; 在基板和结构层之间延伸的第一和第二导电路径; 第一和第二导电焊盘，其容纳在所述空腔中，并且分别通过延伸穿过所述第一和第二导电路径并与所述结构层绝缘的第一和第二连接区域电连接到所述第一和第二导电路径的第一端子部分; 压电谐振器，其具有分别电耦合到第一和第二导电焊盘并且在空腔中延伸的第一和第二端; 以及第三和第四导电焊盘，其位于腔的外部并电耦合到第一和第二导电路径的第二端子部分。
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公开(公告)号：US10555091B2
公开(公告)日：2020-02-04
申请号：US16128288
申请日：2018-09-11
摘要： A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.
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公开(公告)号：US20180059405A1
公开(公告)日：2018-03-01
申请号：US15245805
申请日：2016-08-24
CPC分类号： G02B26/105 , B81B2201/042 , B81C1/00317 , B81C2203/0109 , B81C2203/019 , G02B26/0833
摘要： Disclosed herein is a micro-electro mechanical (MEMS) device including a substrate, and a MEMS mirror stack on the substrate. A first bonding layer seals against ingress of environmental contaminants and mechanically anchors the MEMS mirror stack to the substrate. A cap layer is formed on the MEMS mirror stack. A second boding layer seals against ingress of environmental contaminants and mechanically anchors the cap layer to the MEMS mirror stack.
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7.发明授权Method for manufacturing a die assembly having a small thickness and die assembly relating thereto 有权具有小厚度的模具组件的制造方法和与其相关的模具组件公开(公告)号：US09327964B2
公开(公告)日：2016-05-03
申请号：US14524661
申请日：2014-10-27
CPC分类号： B81B7/0074 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/097 , B81C1/00238 , B81C1/00325 , B81C2203/0118 , B81C2203/0792
摘要： A method for manufacturing a die assembly, including the steps of: bonding a first wafer of semiconductor material to a second wafer, the second wafer including a respective semiconductor body having a respective initial thickness and forming an integrated electronic circuit; and subsequently reducing the initial thickness of the semiconductor body of the second wafer; and subsequently bonding the second wafer to a third wafer, the third wafer forming a micro-electromechanical sensing structure.
摘要翻译： 一种用于制造模具组件的方法，包括以下步骤：将半导体材料的第一晶片接合到第二晶片，所述第二晶片包括具有各自的初始厚度的相应的半导体本体，并形成集成的电子电路; 随后减小第二晶片的半导体本体的初始厚度; 并且随后将所述第二晶片接合到第三晶片，所述第三晶片形成微机电感测结构。
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8.发明申请METHOD FOR MANUFACTURING A DIE ASSEMBLY HAVING A SMALL THICKNESS AND DIE ASSEMBLY RELATING THERETO 有权用于制造具有小厚度的模具组件的方法和与其相关的模具组件公开(公告)号：US20150115378A1
公开(公告)日：2015-04-30
申请号：US14524661
申请日：2014-10-27
CPC分类号： B81B7/0074 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/097 , B81C1/00238 , B81C1/00325 , B81C2203/0118 , B81C2203/0792
摘要： A method for manufacturing a die assembly, including the steps of: bonding a first wafer of semiconductor material to a second wafer, the second wafer including a respective semiconductor body having a respective initial thickness and forming an integrated electronic circuit; and subsequently reducing the initial thickness of the semiconductor body of the second wafer; and subsequently bonding the second wafer to a third wafer, the third wafer forming a micro-electromechanical sensing structure.
摘要翻译： 一种用于制造模具组件的方法，包括以下步骤：将半导体材料的第一晶片接合到第二晶片，所述第二晶片包括具有各自的初始厚度的相应的半导体本体，并形成集成的电子电路; 随后减小第二晶片的半导体本体的初始厚度; 并且随后将所述第二晶片接合到第三晶片，所述第三晶片形成微机电感测结构。
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公开(公告)号：US11128958B2
公开(公告)日：2021-09-21
申请号：US16256816
申请日：2019-01-24
摘要： A method for manufacturing a semiconductor die, comprising the steps of: providing a MEMS device having a structural body, provided with a cavity, and a membrane structure suspended over the cavity; coupling the structural body to a filtering module via direct bonding or fusion bonding so that a first portion of the filtering module extends over the cavity and a second portion of the filtering module extends seamlessly as a prolongation of the structural body; and etching selective portions of the filtering module in an area corresponding to the first portion, to form filtering openings fluidically coupled to the cavity. The semiconductor die is, for example, a microphone.
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10.发明授权公开(公告)号：US10570009B2
公开(公告)日：2020-02-25
申请号：US16283254
申请日：2019-02-22
摘要： A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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