摘要:
An assembly of semiconductor wafers/chips wherein the adjacent surfaces of the two wafers/chips comprise an insulating layer having opposite copper pads inserted therein. The insulating layer is made of a material selected from the group including silicon nitride and silicon carbon nitride.
摘要:
An image acquisition device includes an array of color filters and an array of microlenses over the array of color filters. At least one layer made from an inorganic dielectric material is formed between the array of color filters and the array of microlenses.
摘要:
A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.
摘要:
An image acquisition device includes an array of color filters and an array of microlenses over the array of color filters. At least one layer made from an inorganic dielectric material is formed between the array of color filters and the array of microlenses.
摘要:
A phase-change memory includes a strip of phase-change material that is coated with a conductive strip and surrounded by an insulator. The strip of phase-change material has a lower face in contact with tips of a resistive element. A connection network composed of several levels of metallization coupled with one another by conducting vias is provided above the conductive strip. At least one element of a lower level of the metallization is in direct contact with the upper surface of the conductive strip.