公开(公告)号：US20240218228A1

公开(公告)日：2024-07-04

申请号：US18523255

申请日：2023-11-29

申请人： Honeywell International Inc.

发明人： Yaqun Liu ,  Yunyun Zhang

IPC分类号： C09K5/06 ,  H01L23/00 ,  H01L23/367

CPC分类号： C09K5/06 ,  H01L23/367 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/2732 ,  H01L2224/29105 ,  H01L2224/32221 ,  H01L2924/049 ,  H01L2924/0715

摘要： A thermal interface material including at least a low melting point gallium alloy and a mercapto group-containing silicone oil, as well as an emulsifying compound, at least one polymer, a thermally conductive powder, and a coupling compound.

公开(公告)号：US11830838B2

公开(公告)日：2023-11-28

申请号：US17677161

申请日：2022-02-22

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Paul M. Enquist

IPC分类号： H01L23/00 ,  H01L21/50 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/09 ,  H01L21/50 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/89 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/036 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/03825 ,  H01L2224/05005 ,  H01L2224/05007 ,  H01L2224/05026 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/08112 ,  H01L2224/08121 ,  H01L2224/08123 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/80011 ,  H01L2224/8019 ,  H01L2224/80031 ,  H01L2224/80035 ,  H01L2224/80047 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80099 ,  H01L2224/80194 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80935 ,  H01L2224/80986 ,  H01L2225/06513 ,  H01L2224/03462 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/29339 ,  H01L2924/00014 ,  H01L2224/29386 ,  H01L2224/80895 ,  H01L2924/053 ,  H01L2224/80986 ,  H01L2224/80896 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05686 ,  H01L2924/04941 ,  H01L2224/05686 ,  H01L2924/04953 ,  H01L2224/05684 ,  H01L2924/049 ,  H01L2224/05676 ,  H01L2924/053 ,  H01L2224/05681 ,  H01L2924/01014 ,  H01L2924/049 ,  H01L2224/05666 ,  H01L2924/01014 ,  H01L2924/049 ,  H01L2224/05684 ,  H01L2924/01005 ,  H01L2924/049 ,  H01L2224/05655 ,  H01L2924/051 ,  H01L2924/00014 ,  H01L2224/05657 ,  H01L2924/01074 ,  H01L2224/05657 ,  H01L2924/01074 ,  H01L2924/042

摘要： A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

公开(公告)号：US09922953B2

公开(公告)日：2018-03-20

申请号：US15121855

申请日：2015-02-26

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Paul Gondcharton ,  Lamine Benaissa ,  Bruno Imbert ,  Hubert Moriceau

IPC分类号： H01L21/00 ,  H01L21/47 ,  H01L21/44 ,  H01L23/00 ,  H01L21/18 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  H01L21/185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0381 ,  H01L2224/03845 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/2745 ,  H01L2224/2755 ,  H01L2224/27845 ,  H01L2224/29147 ,  H01L2224/80055 ,  H01L2224/80357 ,  H01L2224/8083 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/8092 ,  H01L2224/80948 ,  H01L2224/83895 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/049 ,  H01L2924/00012

摘要： A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

公开(公告)号：US09911778B2

公开(公告)日：2018-03-06

申请号：US15228894

申请日：2016-08-04

申请人： Sony Corporation

发明人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H04N5/369 ,  H01L23/528 ,  H01L23/532 ,  H01L27/06

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US20170194283A1

公开(公告)日：2017-07-06

申请号：US15385653

申请日：2016-12-20

申请人： IMEC VZW ,  Katholieke Universiteit Leuven

发明人： Vikas Dubey ,  Eric Beyne ,  Jaber Derakhshandeh

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/0601 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13009 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/13541 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/8114 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92225 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2924/01049 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2924/01005 ,  H01L2924/206 ,  H01L2924/20106 ,  H01L2924/207

摘要： A method for producing a stack of semiconductor devices and the stacked device obtained thereof are disclosed. In one aspect, the method includes providing a first semiconductor device comprising a dielectric layer with a hole, the hole lined with a metal layer and partially filled with solder material. The method also includes providing a second semiconductor device with a compliant layer having a metal protrusion through the compliant layer, the protrusion capped with a capping layer. The method further includes mounting the devices by landing the metal protrusion in the hole, where the compliant layer is spaced from the dielectric layer. The method includes thereafter reflowing the solder material, thereby bonding the devices such that the compliant layer is contacting the dielectric layer.

公开(公告)号：US09666573B1

公开(公告)日：2017-05-30

申请号：US15335259

申请日：2016-10-26

申请人： Micron Technology, Inc.

发明人： Mitsunari Sukekawa

IPC分类号： H01L21/00 ,  H01L25/00 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/73 ,  H01L24/80 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/04 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05176 ,  H01L2224/05184 ,  H01L2224/05546 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/05688 ,  H01L2224/08145 ,  H01L2224/13017 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/73251 ,  H01L2224/80013 ,  H01L2224/80203 ,  H01L2224/80801 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80906 ,  H01L2224/80907 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/05442 ,  H01L2924/00014 ,  H01L2224/08 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2924/047 ,  H01L2924/049 ,  H01L2924/045 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/05042 ,  H01L2924/014 ,  H01L2224/03 ,  H01L21/304 ,  H01L2224/11 ,  H01L2224/13

摘要： Some embodiments include a method of forming integrated circuitry. A first assembly is formed to have a first dielectric material, a first conductive pad and a conductive structure. The first assembly has a first surface which includes a surface of the first dielectric material, a surface of the first conductive pad and a surface of the conductive structure. A second assembly is formed to have a second dielectric material and a second conductive pad. The second assembly has a second surface which includes a surface of the second dielectric material and a surface of the second conductive pad. The first surface is placed directly against the second surface. The surface of the first dielectric material is bonded with the surface of the second dielectric material, and the surface of the first conductive pad is bonded with the surface of the second conductive pad.

公开(公告)号：US09287251B2

公开(公告)日：2016-03-15

申请号：US14794561

申请日：2015-07-08

申请人： Samsung Electronics Co., Ltd.

发明人： Pil-Kyu Kang ,  Seok-Ho Kim ,  Tae-Yeong Kim ,  Hyo-Ju Kim ,  Byung-Lyul Park ,  Yeun-Sang Park ,  Jin-Ho An ,  Ho-Jin Lee ,  Joo-Hee Jang ,  Deok-Young Jung

IPC分类号： H01L21/00 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L25/50 ,  H01L21/76831 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/08121 ,  H01L2224/08147 ,  H01L2224/80013 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/00014 ,  H01L2924/049 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

摘要： In a method, a first opening is formed in a first insulating interlayer on a first substrate. A first conductive pattern structure contacting a first diffusion prevention insulation pattern and having a planarized top surface is formed in the first opening. Likewise, a second conductive pattern structure contacting a second diffusion prevention insulation pattern is formed in a second insulating interlayer on a second substrate. A plasma treatment process is performed on at least one of the first and second substrates having the first and second conductive pattern structures thereon, respectively. The first and second conductive pattern structures are contacted to each other to bond the first and second substrates.

摘要翻译： 在一种方法中，第一开口形成在第一基板上的第一绝缘中间层中。 在第一开口中形成有与第一扩散防止绝缘图案接触并具有平坦化顶表面的第一导电图案结构。 类似地，在第二基板上的第二绝缘中间层中形成接触第二扩散防止绝缘图案的第二导电图案结构。 在其上分别具有第一和第二导电图案结构的第一和第二基板中的至少一个上执行等离子体处理工艺。 第一和第二导电图案结构彼此接触以接合第一和第二基板。

公开(公告)号：US20160020197A1

公开(公告)日：2016-01-21

申请号：US14794561

申请日：2015-07-08

申请人： Samsung Electronics Co., Ltd.

发明人： Pil-Kyu Kang ,  Seok-Ho Kim ,  Tae-Yeong Kim ,  Hyo-Ju Kim ,  Byung-Lyul Park ,  Yeun-Sang Park ,  Jin-Ho An ,  Ho-Jin Lee ,  Joo-Hee Jang ,  Deok-Young Jung

IPC分类号： H01L25/00 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L25/50 ,  H01L21/76831 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/08121 ,  H01L2224/08147 ,  H01L2224/80013 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/00014 ,  H01L2924/049 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

摘要： In a method, a first opening is formed in a first insulating interlayer on a first substrate. A first conductive pattern structure contacting a first diffusion prevention insulation pattern and having a planarized top surface is formed in the first opening. Likewise, a second conductive pattern structure contacting a second diffusion prevention insulation pattern is formed in a second insulating interlayer on a second substrate, plasma treatment process is performed on at least one of the first and second substrates having the first and second conductive pattern structures thereon, respectively. The first and second conductive pattern structures are contacted to each other to bond the first and second substrates.

摘要翻译： 在一种方法中，第一开口形成在第一基板上的第一绝缘中间层中。 在第一开口中形成有与第一扩散防止绝缘图案接触并具有平坦化顶表面的第一导电图案结构。 类似地，在第二基板上的第二绝缘中间层中形成接触第二扩散防止绝缘图案的第二导电图案结构，在其上具有第一和第二导电图案结构的第一和第二基板中的至少一个上执行等离子体处理工艺， ， 分别。 第一和第二导电图案结构彼此接触以接合第一和第二基板。

公开(公告)号：US08896125B2

公开(公告)日：2014-11-25

申请号：US13533526

申请日：2012-06-26

申请人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

发明人： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/768 ,  H01L27/146 ,  H01L27/06

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

摘要： Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

摘要翻译： 本发明公开了一种半导体器件，包括：第一基板，包括第一电极和由用于第一电极的扩散防止材料构成的第一绝缘膜，并且覆盖第一电极的周边，第一电极和第一绝缘膜协作 彼此配置接合面; 以及第二基板，其接合并设置在所述第一基板上并且包括接合到所述第一电极的第二电极，以及由用于所述第二电极的扩散防止材料构成并覆盖所述第二电极的周边的第二绝缘膜，所述第二电极 并且所述第二绝缘膜彼此配合以配置到所述第一基板的接合面。

公开(公告)号：US20120306080A1

公开(公告)日：2012-12-06

申请号：US13298046

申请日：2011-11-16

申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Kuo-Ching Hsu ,  Cheng-Chieh Hsieh ,  Ying-Ching Shih ,  Po-Hao Tsai ,  Cheng-Lin Huang ,  Jing-Cheng Lin

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Kuo-Ching Hsu ,  Cheng-Chieh Hsieh ,  Ying-Ching Shih ,  Po-Hao Tsai ,  Cheng-Lin Huang ,  Jing-Cheng Lin

IPC分类号： H01L23/52

CPC分类号： H01L24/11 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/04 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10145 ,  H01L2224/10156 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11831 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/13578 ,  H01L2224/13686 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/3651 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2924/00

摘要： A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier.

摘要翻译： 封装组件不含其中的有源器件。 封装部件包括衬底，衬底中的通孔，衬底上的顶部电介质层和在顶部电介质层的顶表面上方具有顶表面的金属柱。 金属柱电连接到通孔。 扩散阻挡层在金属支柱的上表面之上。 焊料帽设置在扩散阻挡层上。