公开(公告)号：US20110133284A1

公开(公告)日：2011-06-09

申请号：US12718418

申请日：2010-03-05

申请人： SUBHASISH MITRA ,  Nishant P. Patil ,  Chung Chun Wan ,  H.-S. Philip Wong

发明人： SUBHASISH MITRA ,  Nishant P. Patil ,  Chung Chun Wan ,  H.-S. Philip Wong

IPC分类号： H01L27/088 ,  B08B7/00 ,  H01B13/00 ,  B32B38/00 ,  H01L21/302 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L31/035281 ,  B08B7/0035 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/283 ,  H01L51/0013 ,  H01L51/003 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

摘要： A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yield for successive transfers of nanotubes. In one such carbon nanotube transfer process, a carrier material is partially etched by a plasma process before removing the carrier material through, for example, a wet etch. By applying the subject plasma exposure processes, fabrication of ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics is facilitated. The ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics fabricated utilizing embodiments of the invention can be used, for example, to make high-performance carbon nanotube field effect transistors (CNFETs) and low cost, highly-transparent, and low-resistivity electrodes for solar cell and flat panel display applications. Further, three-dimensional CNFETs can be provided by utilizing the subject plasma exposure processes.

摘要翻译： 提供了晶圆级多碳纳米管转移工艺。 根据本发明的一个实施方案，等离子体暴露过程在碳纳米管装置或制品的制造过程的各个阶段进行，以提高连续转移纳米管的可行性和产率。 在一种这样的碳纳米管转移方法中，通过例如湿蚀刻除去载体材料之前，通过等离子体工艺部分地蚀刻载体材料。 通过应用目标等离子体曝光工艺，便于制造超高密度纳米管和超高密度纳米管网格或织物。 使用本发明实施例制造的超高密度纳米管和超高密度纳米管网格或织物可用于例如制造高性能碳纳米管场效应晶体管（CNFET）和低成本，高透明度 ，以及用于太阳能电池和平板显示器应用的低电阻率电极。 此外，可以通过利用目标等离子体曝光工艺来提供三维CNFET。

公开(公告)号：US09748421B2

公开(公告)日：2017-08-29

申请号：US12718418

申请日：2010-03-05

申请人： Subhasish Mitra ,  Nishant P. Patil ,  Chung Chun Wan ,  H.-S. Philip Wong

发明人： Subhasish Mitra ,  Nishant P. Patil ,  Chung Chun Wan ,  H.-S. Philip Wong

IPC分类号： H01L31/0352 ,  B08B7/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/00 ,  H01L27/28 ,  H01L51/05

CPC分类号： H01L31/035281 ,  B08B7/0035 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/283 ,  H01L51/0013 ,  H01L51/003 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

摘要： A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yield for successive transfers of nanotubes. In one such carbon nanotube transfer process, a carrier material is partially etched by a plasma process before removing the carrier material through, for example, a wet etch. By applying the subject plasma exposure processes, fabrication of ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics is facilitated. The ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics fabricated utilizing embodiments of the invention can be used, for example, to make high-performance carbon nanotube field effect transistors (CNFETs) and low cost, highly-transparent, and low-resistivity electrodes for solar cell and flat panel display applications. Further, three-dimensional CNFETs can be provided by utilizing the subject plasma exposure processes.

公开(公告)号：US20130027596A1

公开(公告)日：2013-01-31

申请号：US13557656

申请日：2012-07-25

申请人： Chung Chun Wan

发明人： Chung Chun Wan

IPC分类号： H01L27/148 ,  H04N9/04

CPC分类号： H01L27/14612 ,  H01L27/14623 ,  H01L27/14643

摘要： Electronic devices may include monochrome image sensors having multi-storage-node image sensor pixels. A multi-storage-node image pixel may be synchronized with artificial light sources of different colors and may include a floating diffusion region and multiple storage regions. The image pixels may be sequentially exposed to each light color and may store charge associated with each color in each of the different storage regions. After exposure, the stored charge may be transferred to the floating diffusion region and subsequently read out using readout circuitry. The image pixel may have one set of storage gates that can perform both storage and transfer functions. Alternatively, the image pixel may have a first set of transfer gates for transferring charge to the storage regions and a second set of transfer gates for transferring charge from the storage regions to the floating diffusion region.

摘要翻译： 电子设备可以包括具有多存储节点图像传感器像素的单色图像传感器。 多存储节点图像像素可以与不同颜色的人造光源同步，并且可以包括浮动扩散区域和多个存储区域。 图像像素可以顺序地暴露于每种浅色，并且可以在每个不同的存储区域中存储与每种颜色相关联的电荷。 曝光后，存储的电荷可以传送到浮动扩散区域，并随后使用读出电路读出。 图像像素可以具有可以执行存储和传送功能的一组存储门。 或者，图像像素可以具有用于将电荷传送到存储区域的第一组传输门和用于将电荷从存储区域转移到浮动扩散区域的第二组传输门。

公开(公告)号：US09083905B2

公开(公告)日：2015-07-14

申请号：US13353593

申请日：2012-01-19

申请人： Chung Chun Wan ,  Xiangli Li ,  Gennadiy Agranov

发明人： Chung Chun Wan ,  Xiangli Li ,  Gennadiy Agranov

IPC分类号： H04N5/235 ,  H04N9/73 ,  G03B7/00 ,  H04N5/3745 ,  G01S17/10 ,  G01S17/89

CPC分类号： H04N13/296 ,  G01S17/10 ,  G01S17/89 ,  H04N5/2354 ,  H04N5/37452 ,  H04N5/378 ,  H04N13/254

摘要： Structured light imaging method and systems are described. An imaging method generates a stream of light pulses, converts the stream after reflection by a scene to charge, stores charge converted during the light pulses to a first storage element, and stores charge converted between light pulses to a second storage element. A structured light image system includes an illumination source that generates a stream of light pulses and an image sensor. The image sensor includes a photodiode, first and second storage elements, first and second switches, and a controller that synchronizes the image sensor to the illumination source and actuates the first and second switches to couple the first storage element to the photodiode to store charge converted during the light pulses and to couple the second storage element to the photodiode to store charge converted between the light pulses.

摘要翻译： 描述了结构光成像方法和系统。 成像方法产生光脉冲流，通过场景反射后的流转换为电荷，将在光脉冲期间转换的电荷存储到第一存储元件，并将在光脉冲之间转换的电荷存储到第二存储元件。 结构化光图像系统包括产生光脉冲流的照明源和图像传感器。 图像传感器包括光电二极管，第一和第二存储元件，第一和第二开关以及使图像传感器与照明源同步并且致动第一和第二开关以将第一存储元件耦合到光电二极管以存储电荷转换的控制器 并且将第二存储元件耦合到光电二极管以存储在光脉冲之间转换的电荷。

公开(公告)号：US08928792B1

公开(公告)日：2015-01-06

申请号：US13153369

申请日：2011-06-03

申请人： Jaroslav Hynecek ,  Gennadiy Agranov ,  Xiangli Li ,  Hirofumi Komori ,  Xia Zhao ,  Chung Chun Wan

发明人： Jaroslav Hynecek ,  Gennadiy Agranov ,  Xiangli Li ,  Hirofumi Komori ,  Xia Zhao ,  Chung Chun Wan

IPC分类号： H04N5/335 ,  H04N5/359 ,  H04N5/3745

CPC分类号： H01L27/14612 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14679 ,  H04N5/3591 ,  H04N5/3745

摘要： The invention describes a solid-state CMOS image sensor array and discloses image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for a single photodiode, for charge storage and sensing. Thus, the valuable pixel area saved by employing the BCMD transistor for charge storage and sensing is used by placing several BCMD transistors coupled to one photodiode. This increases the Dynamic Range (DR) of the sensor, since the same photodiode can integrate charge for different integration times, both long and short. This allows sensing of two different image signals from a single pixel without saturation, a low level signal with long integration time followed by a high level signal with short integration time. The signal processing circuits located at the periphery of the array can then process these signals into a single Wide Dynamic Range (WDR) output. Further disclosed is an image sensor array with pixels that use BCMD transistors for charge storage and sensing having multiple concentric gates, which allows changing the conversion gain of the BCMD transistors by applying various biases to the gates. Variable conversion gain is a useful feature when building WDR sensors since low conversion gain and high well capacity allows detection of high level signals and the same structure can be used to detect, at the same time, low level signals with high conversion gain and thus low noise.

摘要翻译： 本发明描述了一种固态CMOS图像传感器阵列，并公开了具有全局和滚动快门功能的图像传感器阵列像素，其利用用于单个光电二极管的多个BCMD晶体管用于电荷存储和感测。 因此，通过使用耦合到一个光电二极管的几个BCMD晶体管来使用通过使用用于电荷存储和感测的BCMD晶体管节省的有价值的像素区域。 这增加了传感器的动态范围（DR），因为相同的光电二极管可以集成不同集成时间的电荷，包括长和短。 这允许感测来自不饱和的单个像素的两个不同图像信号，具有长积分时间的低电平信号，随后是具有短积分时间的高电平信号。 位于阵列外围的信号处理电路然后可以将这些信号处理成单个宽动态范围（WDR）输出。 进一步公开的是具有使用BCMD晶体管的像素的图像传感器阵列，用于具有多个同心门的电荷存储和感测，这允许通过向栅极应用各种偏压来改变BCMD晶体管的转换增益。 可变转换增益是构建WDR传感器的有用特征，因为低转换增益和高容量能够允许检测高电平信号，并且可以使用相同的结构同时检测具有高转换增益的低电平信号，从而低 噪声。

公开(公告)号：US08462250B2

公开(公告)日：2013-06-11

申请号：US13073158

申请日：2011-03-28

申请人： Chung Chun Wan ,  Xiangli Li

发明人： Chung Chun Wan ,  Xiangli Li

IPC分类号： H04N5/335

CPC分类号： H04N5/376 ,  H04N5/378

摘要： A pixel circuit includes a photosensor and a floating diffusion node. A circuit is coupled to the floating diffusion node, for selectively providing a pixel output signal to a column line. A reset circuit, which resets the floating diffusion node, is configured to be activated by the column line. A pullup circuit is included for controlling the reset circuit through a signal on the column line. A discharge circuit, which is separate from the reset circuit, is used for discharging the pixel output signal on the column line. The discharge circuit includes a transistor having a first source/drain terminal coupled to the column line and a second source/drain terminal coupled to a fixed voltage level. The gate of the transistor activates the discharging of the column line.

摘要翻译： 像素电路包括光电传感器和浮动扩散节点。 电路耦合到浮动扩散节点，用于选择性地向列线提供像素输出信号。 将浮动扩散节点复位的复位电路配置为由列线激活。 包括上拉电路，用于通过列线上的信号来控制复位电路。 与复位电路分离的放电电路用于对列线上的像素输出信号进行放电。 放电电路包括具有耦合到列线的第一源极/漏极端子和耦合到固定电压电平的第二源极/漏极端子的晶体管。 晶体管的栅极激活列线的放电。

公开(公告)号：US20130135486A1

公开(公告)日：2013-05-30

申请号：US13687380

申请日：2012-11-28

申请人： Chung Chun Wan

发明人： Chung Chun Wan

IPC分类号： H04N5/765

CPC分类号： H04N5/765 ,  H04N5/335 ,  H04N5/35581 ,  H04N5/374 ,  H04N5/772

摘要： High dynamic range imaging techniques with multi-storage pixels are provided. Multiple images may be captured during a single exposure using an image sensor with multi-storage pixels. During a single exposure, charge from photodiodes may be transferred alternately to multiple storage nodes of the multi-storage pixels. During readout of a multi-storage pixel, charge may be transferred from each of multiple storage nodes one at a time to a floating diffusion node. Each subsequent transfer of charge may be summed with the charge already stored in the floating diffusion node. A pixel signal may be read out from the multi-storage pixel after each charge transfer. Images formed from the pixel signals may be combined to produce a high dynamic range image.

摘要翻译： 提供了具有多存储像素的高动态范围成像技术。 在使用具有多存储像素的图像传感器的单次曝光期间可以捕获多个图像。 在单次曝光期间，来自光电二极管的电荷可以交替传送到多存储像素的多个存储节点。 在读出多存储像素期间，可以将电荷从多个存储节点中的每一个一次一个地传送到浮动扩散节点。 每次随后的电荷转移可以与已经存储在浮动扩散节点中的电荷相加。 每次电荷转移后，可以从多存储像素中读出像素信号。 由像素信号形成的图像可以被组合以产生高动态范围图像。

公开(公告)号：US08674282B2

公开(公告)日：2014-03-18

申请号：US13242865

申请日：2011-09-23

申请人： Chung Chun Wan ,  Xiangli Li

发明人： Chung Chun Wan ,  Xiangli Li

IPC分类号： H01L27/00

CPC分类号： H01L27/14887 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14654 ,  H04N5/3532 ,  H04N5/37452

摘要： The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on a substrate of the pixel. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge barrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. Also included is a pump gate positioned on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier in response to a pump voltage applied by a controller. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate transfers the pumped charge from the second photo-diode to the floating diffusion in response to a transfer voltage applied by a controller.

摘要翻译： 本发明涉及一种泵浦像素，其包括响应于入射光子的第一光电二极管累积电荷，位于像素的衬底上的第二光电二极管和浮动扩散。 像素还包括位于第一光电二极管和第二光电二极管之间的衬底上的电荷势垒，其中电荷势垒暂时阻止第一光电二极管和第二光电二极管之间的电荷转移。 还包括位于基板上的与栅极相邻的泵浦门。 泵控制器响应于由控制器施加的泵浦电压，将累积的电荷从第一光电二极管泵送到第二光电二极管。 还包括位于第二光电二极管和浮动扩散之间的衬底上的传输门。 转移栅极响应于由控制器施加的转印电压将泵送的电荷从第二光电二极管传送到浮动扩散。

公开(公告)号：US08466402B2

公开(公告)日：2013-06-18

申请号：US12911702

申请日：2010-10-25

申请人： Chung Chun Wan ,  Xiangli Li

发明人： Chung Chun Wan ,  Xiangli Li

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  G01J1/44 ,  H01L27/14603 ,  H01L27/14623

摘要： An imaging system may include imaging pixels. Each imaging pixel may include floating diffusion metal lines associated with a floating diffusion node in that imaging pixel, pixel output metal lines associated with a pixel output, and additional metal lines. The floating diffusion metal lines node may be at least partially surrounded by the pixel output metal lines. Because the floating diffusion metal lines are at least partially surrounded by the pixel output metal lines, the parasitic capacitance between the floating diffusion metal lines and the additional metal lines may be reduced. A source-follower transistor in each imaging pixel may provide a gain between the floating diffusion metal lines and the pixel output metal lines. Due to the Miller effect, the gain induced by the source-follower transistor may reduce the parasitic capacitance between the floating diffusion metal lines and the pixel output metal lines.

摘要翻译： 成像系统可以包括成像像素。 每个成像像素可以包括与该成像像素中的浮动扩散节点相关联的浮动扩散金属线，与像素输出相关联的像素输出金属线以及附加金属线。 浮动扩散金属线节点可以至少部分地被像素输出金属线包围。 由于浮动扩散金属线至少部分地被像素输出金属线包围，所以可以减小浮动扩散金属线与附加金属线之间的寄生电容。 每个成像像素中的源极 - 跟随器晶体管可以在浮动扩散金属线和像素输出金属线之间提供增益。 由于米勒效应，由源极 - 跟随器晶体管感应的增益可以减小浮动扩散金属线与像素输出金属线之间的寄生电容。

公开(公告)号：US20120097842A1

公开(公告)日：2012-04-26

申请号：US12911702

申请日：2010-10-25

申请人： Chung Chun Wan ,  Xiangli Li

发明人： Chung Chun Wan ,  Xiangli Li

IPC分类号： G01J1/44

CPC分类号： H01L27/14609 ,  G01J1/44 ,  H01L27/14603 ,  H01L27/14623

摘要： An imaging system may include imaging pixels. Each imaging pixel may include floating diffusion metal lines associated with a floating diffusion node in that imaging pixel, pixel output metal lines associated with a pixel output, and additional metal lines. The floating diffusion metal lines node may be at least partially surrounded by the pixel output metal lines. Because the floating diffusion metal lines are at least partially surrounded by the pixel output metal lines, the parasitic capacitance between the floating diffusion metal lines and the additional metal lines may be reduced. A source-follower transistor in each imaging pixel may provide a gain between the floating diffusion metal lines and the pixel output metal lines. Due to the Miller effect, the gain induced by the source-follower transistor may reduce the parasitic capacitance between the floating diffusion metal lines and the pixel output metal lines.

摘要翻译： 成像系统可以包括成像像素。 每个成像像素可以包括与该成像像素中的浮动扩散节点相关联的浮动扩散金属线，与像素输出相关联的像素输出金属线以及附加金属线。 浮动扩散金属线节点可以至少部分地被像素输出金属线包围。 由于浮动扩散金属线至少部分地被像素输出金属线包围，所以可以减小浮动扩散金属线与附加金属线之间的寄生电容。 每个成像像素中的源极 - 跟随器晶体管可以在浮动扩散金属线和像素输出金属线之间提供增益。 由于米勒效应，由源极 - 跟随器晶体管感应的增益可以减小浮动扩散金属线与像素输出金属线之间的寄生电容。